ALD1105PBL

Advanced Linear Devices Inc. ALD1105PBL

Изображение только для справки, пожалуйста, обратитесь к спецификации продукта

  • ALD1105PBL
  • Advanced Linear Devices Inc.
  • MOSFET 2N/2P-CH 10.6V 14DIP
  • Transistors - FETs, MOSFETs - Arrays
  • ALD1105PBL Лист данных
  • 14-DIP (0.300\", 7.62mm)
  • Jinftry-Reel®
  • Lead free / RoHS Compliant,https://www.jinftry.ru/product_detail/ALD1105PBLLead free / RoHS Compliant
  • 3977
  • Запасы спот / разрешенные дилеры / излишки на заводе
  • Гарантия качества на 1 год 》
  • Нажмите, чтобы узнать цены
Part Number
ALD1105PBL
Category
Transistors - FETs, MOSFETs - Arrays
Manufacturer
Advanced Linear Devices Inc.
Description
MOSFET 2N/2P-CH 10.6V 14DIP
Package
Jinftry-Reel®
Series
-
Operating Temperature
0°C ~ 70°C (TJ)
Mounting Type
Through Hole
Package / Case
14-DIP (0.300\", 7.62mm)
Supplier Device Package
14-PDIP
Power - Max
500mW
FET Type
2 N and 2 P-Channel Matched Pair
FET Feature
Standard
Drain to Source Voltage (Vdss)
10.6V
Current - Continuous Drain (Id) @ 25°C
-
Rds On (Max) @ Id, Vgs
500Ohm @ 5V
Vgs(th) (Max) @ Id
1V @ 1µA
Gate Charge (Qg) (Max) @ Vgs
-
Input Capacitance (Ciss) (Max) @ Vds
3pF @ 5V
Package_case
14-DIP (0.300\", 7.62mm)

ALD1105PBL Гарантии

jinfftry-guarantee1,https://www.jinftry.ru/product_detail/ALD1105PBL

jinfftry-guarantee2,https://www.jinftry.ru/product_detail/ALD1105PBL

jinfftry-guarantee3,https://www.jinftry.ru/product_detail/ALD1105PBL

• Ответьте оперативно

• Гарантированное качество

• Глобальный доступ

• Конкурентоспособная рыночная цена

• Универсальные услуги цепочки поставок

Jinftry, это ваш самый надежный поставщик компонентов, добро пожаловать, чтобы отправить нам запрос, спасибо!

У вас есть вопросы о ALD1105PBL ?
Не стесняйтесь связаться с нами:

+86-755-82518276
+8615019224070, annies65, +8615118125813
568248857, 827259012, 316249462
+8615019224070, +8615118118839, +8615118125813
( Электронная почта в первую очередь )

Комментарии

Оставьте свой комментарий

Advanced Linear Devices Inc.

ALD1106PBL,https://www.jinftry.ru/product_detail/ALD1105PBL
ALD1106PBL

MOSFET 4N-CH 10.6V 14DIP

ALD1115PAL,https://www.jinftry.ru/product_detail/ALD1105PBL
ALD1115PAL

MOSFET 4N-CH 10.6V 14DIP

ALD1102APAL,https://www.jinftry.ru/product_detail/ALD1105PBL
ALD1102APAL

MOSFET 4N-CH 10.6V 14DIP

ALD114813SCL,https://www.jinftry.ru/product_detail/ALD1105PBL
ALD114813SCL

MOSFET 4N-CH 10.6V 14DIP

ALD110802PCL,https://www.jinftry.ru/product_detail/ALD1105PBL
ALD110802PCL

MOSFET 4N-CH 10.6V 14DIP

ALD110908APAL,https://www.jinftry.ru/product_detail/ALD1105PBL
ALD110908APAL

MOSFET 4N-CH 10.6V 14DIP

ALD110904PAL,https://www.jinftry.ru/product_detail/ALD1105PBL
ALD110904PAL

MOSFET 4N-CH 10.6V 14DIP

ALD110904SAL,https://www.jinftry.ru/product_detail/ALD1105PBL
ALD110904SAL

MOSFET 4N-CH 10.6V 14DIP

What is a power module

What is a power module Features of the power module Power drive module role What are the power drive modules ,Provide you with power drive modules,A Power Module is a highly integrated electronic device that controls and converts electrical energy. It usually includes multiple power semiconductor devices (such as IGBTs, MOSFETs, diodes, etc.),

Introduction to Semiconductor Discrete Devices

Introduction to Semiconductor Discrete Devices Semiconductor discrete devices refer to semiconductor crystal diodes, semiconductor transistors, transistors, transistors and semiconductor special devices. Introduction to Semiconductor Discrete Devices Electronic products are divided into "conductors" and "insulators" according to their conductive properties. Semiconductors are between "conductors" and "insulators". Semiconductor components are furthe

What is a bipolar transistor and what is its operating mode

What is a bipolar transistor How bipolar transistors work Bipolar junction transistor four modes of operation Bipolar transistor development applications What is a bipolar transistor

SiC helps the application of power semiconductor devices to increase junction temperature, which will greatly change the design pattern of power systems.

SiC helps the application of power semiconductor devices to increase junction temperature, which will greatly change the design pattern of power systems. Since the birth of silicon power semiconductor devices, application demands have been driving the junction temperature to rise, which has now reached 150°C. With the emergence of third-generation wide-bandgap semiconductor devices (such as SiC) and their increasing maturity and full commercialization, their unique high-temperature resistance i
Индекс продукции
A
B
C
D
E
F
G
H
I
J
K
L
M
N
O
P
Q
R
S
T
U
V
W
X
Y
Z
0
1
2
3
4
5
6
7
8
9
Shopping Cart Tel: +86-755-82518276 Email: sales@jinftry.com Skype: +8615019224070, annies65, +8615118125813 QQ: 568248857, 827259012, 316249462 Mobile: +8615019224070, +8615118118839, +8615118125813 WeChat: Send Message
TOP