Microsemi Corporation 3EZ5.1D5E3/TR12
- 3EZ5.1D5E3/TR12
- Microsemi Corporation
- DIODE ZENER 5.1V 3W DO204AL
- Diodes - Zener - Single
- 3EZ5.1D5E3/TR12 Лист данных
- DO-204AL, DO-41, Axial
- Tape & Reel (TR)
- Lead free / RoHS Compliant
- 20286
- Запасы спот / разрешенные дилеры / излишки на заводе
- Гарантия качества на 1 год 》
- Нажмите, чтобы узнать цены
Part Number 3EZ5.1D5E3/TR12 |
Category Diodes - Zener - Single |
Manufacturer Microsemi Corporation |
Description DIODE ZENER 5.1V 3W DO204AL |
Package Tape & Reel (TR) |
Series - |
Operating Temperature -65°C ~ 150°C |
Mounting Type Through Hole |
Package / Case DO-204AL, DO-41, Axial |
Supplier Device Package DO-204AL (DO-41) |
Tolerance ±5% |
Power - Max 3 W |
Voltage - Forward (Vf) (Max) @ If 1.2 V @ 200 mA |
Current - Reverse Leakage @ Vr 5 µA @ 1 V |
Voltage - Zener (Nom) (Vz) 5.1 V |
Impedance (Max) (Zzt) 3.5 Ohms |
Package_case DO-204AL, DO-41, Axial |
3EZ5.1D5E3/TR12 Гарантии
• Ответьте оперативно
• Гарантированное качество
• Глобальный доступ
• Конкурентоспособная рыночная цена
• Универсальные услуги цепочки поставок
Jinftry, это ваш самый надежный поставщик компонентов, добро пожаловать, чтобы отправить нам запрос, спасибо!
У вас есть вопросы о 3EZ5.1D5E3/TR12 ?
Не стесняйтесь связаться с нами:
+86-755-82518276
+8615019224070, annies65, +8615118125813
568248857, 827259012, 316249462
+8615019224070, +8615118118839, +8615118125813
( Электронная почта в первую очередь )
Комментарии
Microsemi Corporation
3EZ43D5E3/TR12
DIODE ZENER 43V 3W DO204AL
3EZ39D5E3/TR12
DIODE ZENER 43V 3W DO204AL
3EZ36D5E3/TR12
DIODE ZENER 43V 3W DO204AL
3EZ33D5E3/TR12
DIODE ZENER 43V 3W DO204AL
3EZ30D5E3/TR12
DIODE ZENER 43V 3W DO204AL
3EZ27D5E3/TR12
DIODE ZENER 43V 3W DO204AL
1N5949E3/TR13
DIODE ZENER 43V 3W DO204AL
1N5949BE3/TR13
DIODE ZENER 43V 3W DO204AL
What is a power module
What is a power module Features of the power module Power drive module role What are the power drive modules ,Provide you with power drive modules,A Power Module is a highly integrated electronic device that controls and converts electrical energy. It usually includes multiple power semiconductor devices (such as IGBTs, MOSFETs, diodes, etc.),
SiC helps the application of power semiconductor devices to increase junction temperature, which will greatly change the design pattern of power systems.
SiC helps the application of power semiconductor devices to increase junction temperature, which will greatly change the design pattern of power systems.
Since the birth of silicon power semiconductor devices, application demands have been driving the junction temperature to rise, which has now reached 150°C. With the emergence of third-generation wide-bandgap semiconductor devices (such as SiC) and their increasing maturity and full commercialization, their unique high-temperature resistance i
What are IGBTs? How to improve the thermal performance design of IGBT on PCB
What are IGBTs? How to improve the thermal performance design of IGBT on PCB
IGBT - Insulated Gate Bipolar Transistor. An IGBT is a power semiconductor device used in high voltage and high current applications. They are mainly used as switches in power electronic circuits. It's worth noting in the name IGBT, which has an insulated gate like a FET and a bipolar transistor like a BJT. The main reason for this is that an IGBT is indeed a device that combines the advantages of both transistors
Infineon Ximenkang IGBT FF400R12KT4HOSA1 module series
FF450R12KE4 with EDA/CAD model made by Infineon. FF450R12KE4 provides MODULE package, which is a part of Module, Trans IGBT Module N-CH 1200V 520A 2400000mW 7-Pin 62MM-1 Tray, IGBT Modules N-CH 1.2KV 520A.
The following are the IGBT module series models:
SKM100GAL128D, SKM145GAL128D, SKM200GAL128D, SKM300GAL128D, SKM400GAL128D, SKM145GAR128D
SKM400GAR128D, SKM300GA12V, SKM400GA12V, SKM600GA12V, SKM150GAL12V, SKM400GAL12V, SKM50GB12T4, SKM75GB12T4, SKM100GB12T4, SKM150GB12T4, SKM200GB12T4