Microsemi Corporation 3EZ24DE3/TR12
- 3EZ24DE3/TR12
- Microsemi Corporation
- DIODE ZENER 24V 3W DO204AL
- Diodes - Zener - Single
- 3EZ24DE3/TR12 Лист данных
- DO-204AL, DO-41, Axial
- Tape & Reel (TR)
- Lead free / RoHS Compliant
- 2732
- Запасы спот / разрешенные дилеры / излишки на заводе
- Гарантия качества на 1 год 》
- Нажмите, чтобы узнать цены
Part Number 3EZ24DE3/TR12 |
Category Diodes - Zener - Single |
Manufacturer Microsemi Corporation |
Description DIODE ZENER 24V 3W DO204AL |
Package Tape & Reel (TR) |
Series - |
Operating Temperature -65°C ~ 150°C |
Mounting Type Through Hole |
Package / Case DO-204AL, DO-41, Axial |
Supplier Device Package DO-204AL (DO-41) |
Tolerance ±20% |
Power - Max 3 W |
Voltage - Forward (Vf) (Max) @ If 1.2 V @ 200 mA |
Current - Reverse Leakage @ Vr 500 nA @ 18.2 V |
Voltage - Zener (Nom) (Vz) 24 V |
Impedance (Max) (Zzt) 9 Ohms |
Package_case DO-204AL, DO-41, Axial |
3EZ24DE3/TR12 Гарантии
• Ответьте оперативно
• Гарантированное качество
• Глобальный доступ
• Конкурентоспособная рыночная цена
• Универсальные услуги цепочки поставок
Jinftry, это ваш самый надежный поставщик компонентов, добро пожаловать, чтобы отправить нам запрос, спасибо!
У вас есть вопросы о 3EZ24DE3/TR12 ?
Не стесняйтесь связаться с нами:
+86-755-82518276
+8615019224070, annies65, +8615118125813
568248857, 827259012, 316249462
+8615019224070, +8615118118839, +8615118125813
( Электронная почта в первую очередь )
Комментарии
Microsemi Corporation
3EZ22DE3/TR12
DIODE ZENER 22V 3W DO204AL
3EZ22D10E3/TR12
DIODE ZENER 22V 3W DO204AL
3EZ20DE3/TR12
DIODE ZENER 22V 3W DO204AL
3EZ20D10E3/TR12
DIODE ZENER 22V 3W DO204AL
3EZ19DE3/TR12
DIODE ZENER 22V 3W DO204AL
3EZ19D10E3/TR12
DIODE ZENER 22V 3W DO204AL
3EZ18DE3/TR12
DIODE ZENER 22V 3W DO204AL
3EZ18D10E3/TR12
DIODE ZENER 22V 3W DO204AL
What is a bipolar transistor and what is its operating mode
SiC helps the application of power semiconductor devices to increase junction temperature, which will greatly change the design pattern of power systems.
SiC helps the application of power semiconductor devices to increase junction temperature, which will greatly change the design pattern of power systems.
Since the birth of silicon power semiconductor devices, application demands have been driving the junction temperature to rise, which has now reached 150°C. With the emergence of third-generation wide-bandgap semiconductor devices (such as SiC) and their increasing maturity and full commercialization, their unique high-temperature resistance i
What are IGBTs? How to improve the thermal performance design of IGBT on PCB
What are IGBTs? How to improve the thermal performance design of IGBT on PCB
IGBT - Insulated Gate Bipolar Transistor. An IGBT is a power semiconductor device used in high voltage and high current applications. They are mainly used as switches in power electronic circuits. It's worth noting in the name IGBT, which has an insulated gate like a FET and a bipolar transistor like a BJT. The main reason for this is that an IGBT is indeed a device that combines the advantages of both transistors
Silicon Rectifier Diode 1N4004 VS 1N4002 Diode Pinout, Equivalents, Data Sheet, Specifications, Prices and Alternatives
Silicon Rectifier Diode 1N4004 VS 1N4002 Diode Pinout, Equivalents, Data Sheet, Specifications, Prices and Alternatives
1N4004 is a silicon rectifier diode, which has the following typical parameter specifications:
It is a member of the 1N400x series (1N4001-1N4007) rectifier diodes,
which are often used in various electronic devices for voltage rectification, such as power converters or power adapters.
1N4002 Diode Features/Technical Specifications (Partial Parameters):
The pin str