Microsemi Corporation 3EZ20D2/TR12
- 3EZ20D2/TR12
- Microsemi Corporation
- DIODE ZENER 20V 3W DO204AL
- Diodes - Zener - Single
- 3EZ20D2/TR12 Лист данных
- DO-204AL, DO-41, Axial
- Tape & Reel (TR)
- Lead free / RoHS Compliant
- 1345
- Запасы спот / разрешенные дилеры / излишки на заводе
- Гарантия качества на 1 год 》
- Нажмите, чтобы узнать цены
Part Number 3EZ20D2/TR12 |
Category Diodes - Zener - Single |
Manufacturer Microsemi Corporation |
Description DIODE ZENER 20V 3W DO204AL |
Package Tape & Reel (TR) |
Series - |
Operating Temperature -65°C ~ 150°C |
Mounting Type Through Hole |
Package / Case DO-204AL, DO-41, Axial |
Supplier Device Package DO-204AL (DO-41) |
Tolerance ±2% |
Power - Max 3 W |
Voltage - Forward (Vf) (Max) @ If 1.2 V @ 200 mA |
Current - Reverse Leakage @ Vr 500 nA @ 15.2 V |
Voltage - Zener (Nom) (Vz) 20 V |
Impedance (Max) (Zzt) 7 Ohms |
Package_case DO-204AL, DO-41, Axial |
3EZ20D2/TR12 Гарантии
• Ответьте оперативно
• Гарантированное качество
• Глобальный доступ
• Конкурентоспособная рыночная цена
• Универсальные услуги цепочки поставок
Jinftry, это ваш самый надежный поставщик компонентов, добро пожаловать, чтобы отправить нам запрос, спасибо!
У вас есть вопросы о 3EZ20D2/TR12 ?
Не стесняйтесь связаться с нами:
+86-755-82518276
+8615019224070, annies65, +8615118125813
568248857, 827259012, 316249462
+8615019224070, +8615118118839, +8615118125813
( Электронная почта в первую очередь )
Комментарии
Microsemi Corporation
3EZ18D2/TR12
DIODE ZENER 18V 3W DO204AL
3EZ17D2/TR12
DIODE ZENER 18V 3W DO204AL
3EZ16D2/TR12
DIODE ZENER 18V 3W DO204AL
3EZ47D2/TR8
DIODE ZENER 18V 3W DO204AL
3EZ43D2/TR8
DIODE ZENER 18V 3W DO204AL
3EZ39D2/TR8
DIODE ZENER 18V 3W DO204AL
3EZ36D2/TR8
DIODE ZENER 18V 3W DO204AL
3EZ33D2/TR8
DIODE ZENER 18V 3W DO204AL
SiC helps the application of power semiconductor devices to increase junction temperature, which will greatly change the design pattern of power systems.
SiC helps the application of power semiconductor devices to increase junction temperature, which will greatly change the design pattern of power systems.
Since the birth of silicon power semiconductor devices, application demands have been driving the junction temperature to rise, which has now reached 150°C. With the emergence of third-generation wide-bandgap semiconductor devices (such as SiC) and their increasing maturity and full commercialization, their unique high-temperature resistance i
Classification of IGBT modules, difference between application characteristics and MOSFETs
Classification of IGBT modules, difference between application characteristics and MOSFETs
Both MOSFETs (Metal Oxide Semiconductor Field Effect Transistors) and IGBTs (Insulated Gate Bipolar Transistors) are commonly used switching devices in power electronics. They each have their own characteristics and application scenarios, the following are their main differences:
The most complete introduction to IGBT modules in 2023
IGBTs are used in many applications, such as motor drives, industrial control, power transmission, renewable energy, and electric transportation, mainly because IGBTs provide a convenient and reliable power-switching solution for handling high-power and high-voltage applications.
Infineon Ximenkang IGBT FF400R12KT4HOSA1 module series
FF450R12KE4 with EDA/CAD model made by Infineon. FF450R12KE4 provides MODULE package, which is a part of Module, Trans IGBT Module N-CH 1200V 520A 2400000mW 7-Pin 62MM-1 Tray, IGBT Modules N-CH 1.2KV 520A.
The following are the IGBT module series models:
SKM100GAL128D, SKM145GAL128D, SKM200GAL128D, SKM300GAL128D, SKM400GAL128D, SKM145GAR128D
SKM400GAR128D, SKM300GA12V, SKM400GA12V, SKM600GA12V, SKM150GAL12V, SKM400GAL12V, SKM50GB12T4, SKM75GB12T4, SKM100GB12T4, SKM150GB12T4, SKM200GB12T4