Microsemi Corporation 3EZ130D10E3/TR8
Изображение только для справки, пожалуйста, обратитесь к спецификации продукта
- 3EZ130D10E3/TR8
- Microsemi Corporation
- DIODE ZENER 130V 3W DO204AL
- Diodes - Zener - Single
- 3EZ130D10E3/TR8 Лист данных
- DO-204AL, DO-41, Axial
- Tape & Reel (TR)
-
Lead free / RoHS Compliant - 2918
- Запасы спот / разрешенные дилеры / излишки на заводе
- Гарантия качества на 1 год 》
- Нажмите, чтобы узнать цены
Службы доставки:
Способы оплаты:
| Part Number 3EZ130D10E3/TR8 |
| Category Diodes - Zener - Single |
| Manufacturer Microsemi Corporation |
| Description DIODE ZENER 130V 3W DO204AL |
| Package Tape & Reel (TR) |
| Series - |
| Operating Temperature -65°C ~ 150°C |
| Mounting Type Through Hole |
| Package / Case DO-204AL, DO-41, Axial |
| Supplier Device Package DO-204AL (DO-41) |
| Tolerance ±10% |
| Power - Max 3 W |
| Voltage - Forward (Vf) (Max) @ If 1.2 V @ 200 mA |
| Current - Reverse Leakage @ Vr 500 nA @ 98.8 V |
| Voltage - Zener (Nom) (Vz) 130 V |
| Impedance (Max) (Zzt) 375 Ohms |
| Package_case DO-204AL, DO-41, Axial |
3EZ130D10E3/TR8 Гарантии
• Ответьте оперативно
• Гарантированное качество
• Глобальный доступ
• Конкурентоспособная рыночная цена
• Универсальные услуги цепочки поставок
Jinftry, это ваш самый надежный поставщик компонентов, добро пожаловать, чтобы отправить нам запрос, спасибо!
У вас есть вопросы о 3EZ130D10E3/TR8 ?
Не стесняйтесь связаться с нами:
+86-755-82518276
+8615019224070, annies65, +8615118125813
568248857, 827259012, 316249462
+8615019224070, +8615118118839, +8615118125813
( Электронная почта в первую очередь )
3EZ130D10E3/TR8 сопутствующие товары
Комментарии
Microsemi Corporation
3EZ130D/TR8
DIODE ZENER 130V 3W DO204AL
3EZ120DE3/TR8
DIODE ZENER 130V 3W DO204AL
3EZ120D5E3/TR8
DIODE ZENER 130V 3W DO204AL
3EZ120D5/TR8
DIODE ZENER 130V 3W DO204AL
3EZ120D2E3/TR8
DIODE ZENER 130V 3W DO204AL
3EZ120D2/TR8
DIODE ZENER 130V 3W DO204AL
3EZ120D10E3/TR8
DIODE ZENER 130V 3W DO204AL
3EZ120D10/TR8
DIODE ZENER 130V 3W DO204AL
SiC helps the application of power semiconductor devices to increase junction temperature, which will greatly change the design pattern of power systems.
SiC helps the application of power semiconductor devices to increase junction temperature, which will greatly change the design pattern of power systems.
Since the birth of silicon power semiconductor devices, application demands have been driving the junction temperature to rise, which has now reached 150°C. With the emergence of third-generation wide-bandgap semiconductor devices (such as SiC) and their increasing maturity and full commercialization, their unique high-temperature resistance i
2SC5200 2SA1943 NPN transistor electronic power amplifier, data sheet, application characteristics
The 2SA1943 and 2SC5200 are complementary NPN and PNP power transistors commonly used in electronic power amplifier circuits. When used together, they are often used in high-power audio amplifiers to amplify audio signals.
Classification of IGBT modules, difference between application characteristics and MOSFETs
Classification of IGBT modules, difference between application characteristics and MOSFETs
Both MOSFETs (Metal Oxide Semiconductor Field Effect Transistors) and IGBTs (Insulated Gate Bipolar Transistors) are commonly used switching devices in power electronics. They each have their own characteristics and application scenarios, the following are their main differences:
The most complete introduction to IGBT modules in 2023
IGBTs are used in many applications, such as motor drives, industrial control, power transmission, renewable energy, and electric transportation, mainly because IGBTs provide a convenient and reliable power-switching solution for handling high-power and high-voltage applications.
