2SK3565(Q,M)

Toshiba Semiconductor and Storage 2SK3565(Q,M)

Изображение только для справки, пожалуйста, обратитесь к спецификации продукта

  • 2SK3565(Q,M)
  • Toshiba Semiconductor and Storage
  • MOSFET N-CH 900V 5A TO220SIS
  • Transistors - FETs, MOSFETs - Single
  • 2SK3565(Q,M) Лист данных
  • TO-220-3 Full Pack
  • Tape & Reel (TR)
  • Lead free / RoHS Compliant,https://www.jinftry.ru/product_detail/2SK3565-Q-MLead free / RoHS Compliant
  • 17065
  • Запасы спот / разрешенные дилеры / излишки на заводе
  • Гарантия качества на 1 год 》
  • Нажмите, чтобы узнать цены
Part Number
2SK3565(Q,M)
Category
Transistors - FETs, MOSFETs - Single
Manufacturer
Toshiba Semiconductor and Storage
Description
MOSFET N-CH 900V 5A TO220SIS
Package
Tape & Reel (TR)
Series
π-MOSIV
Operating Temperature
150°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-220-3 Full Pack
Supplier Device Package
TO-220SIS
Technology
MOSFET (Metal Oxide)
Power Dissipation (Max)
45W (Tc)
FET Type
N-Channel
FET Feature
-
Drain to Source Voltage (Vdss)
900 V
Current - Continuous Drain (Id) @ 25°C
5A (Ta)
Rds On (Max) @ Id, Vgs
2.5Ohm @ 3A, 10V
Vgs(th) (Max) @ Id
4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
1150 pF @ 25 V
Vgs (Max)
±30V
Drive Voltage (Max Rds On, Min Rds On)
10V
Package_case
TO-220-3 Full Pack

2SK3565(Q,M) Гарантии

jinfftry-guarantee1,https://www.jinftry.ru/product_detail/2SK3565-Q-M

jinfftry-guarantee2,https://www.jinftry.ru/product_detail/2SK3565-Q-M

jinfftry-guarantee3,https://www.jinftry.ru/product_detail/2SK3565-Q-M

• Ответьте оперативно

• Гарантированное качество

• Глобальный доступ

• Конкурентоспособная рыночная цена

• Универсальные услуги цепочки поставок

Jinftry, это ваш самый надежный поставщик компонентов, добро пожаловать, чтобы отправить нам запрос, спасибо!

У вас есть вопросы о 2SK3565(Q,M) ?
Не стесняйтесь связаться с нами:

+86-755-82518276
+8615019224070, annies65, +8615118125813
568248857, 827259012, 316249462
+8615019224070, +8615118118839, +8615118125813
( Электронная почта в первую очередь )

Комментарии

Оставьте свой комментарий

Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage,https://www.jinftry.ru/product_detail/2SK3565-Q-M
2SK3132(Q),https://www.jinftry.ru/product_detail/2SK3565-Q-M
2SK3132(Q)

MOSFET N-CH 500V 50A TO3P

2SK3127(TE24L,Q),https://www.jinftry.ru/product_detail/2SK3565-Q-M
2SK3127(TE24L,Q)

MOSFET N-CH 500V 50A TO3P

2SK3068(TE24L,Q),https://www.jinftry.ru/product_detail/2SK3565-Q-M
2SK3068(TE24L,Q)

MOSFET N-CH 500V 50A TO3P

2SK2995(F),https://www.jinftry.ru/product_detail/2SK3565-Q-M
2SK2995(F)

MOSFET N-CH 500V 50A TO3P

2SK2993(TE24L,Q),https://www.jinftry.ru/product_detail/2SK3565-Q-M
2SK2993(TE24L,Q)

MOSFET N-CH 500V 50A TO3P

2SK2967(F),https://www.jinftry.ru/product_detail/2SK3565-Q-M
2SK2967(F)

MOSFET N-CH 500V 50A TO3P

2SK2917(F),https://www.jinftry.ru/product_detail/2SK3565-Q-M
2SK2917(F)

MOSFET N-CH 500V 50A TO3P

2SK2916(F),https://www.jinftry.ru/product_detail/2SK3565-Q-M
2SK2916(F)

MOSFET N-CH 500V 50A TO3P

2SC5200 2SA1943 NPN transistor electronic power amplifier, data sheet, application characteristics

The 2SA1943 and 2SC5200 are complementary NPN and PNP power transistors commonly used in electronic power amplifier circuits. When used together, they are often used in high-power audio amplifiers to amplify audio signals.

Datasheet and working principle of 1N4001 rectifier diode

Friends who are familiar with diodes should know that 1N4001 is a common rectifier diode used to convert alternating current into direct current. This type of diode has a wide range of applications in electronic equipment and circuits.

Classification of IGBT modules, difference between application characteristics and MOSFETs

Classification of IGBT modules, difference between application characteristics and MOSFETs Both MOSFETs (Metal Oxide Semiconductor Field Effect Transistors) and IGBTs (Insulated Gate Bipolar Transistors) are commonly used switching devices in power electronics. They each have their own characteristics and application scenarios, the following are their main differences:

1N4148 diode, characteristics - can use 1n4148w, 1n4448 diode instead

1N4148 diode, characteristics - can use 1n4148w, 1n4448 diode instead The 1N4148 diode is a common fast-switching diode used in a variety of electronic devices. Picture 01 Basic parameters of 1N4148 diode: Maximum reverse voltage: 100V Maximum forward current: 200mA Peak Forward Current: 450mA Forward Voltage (at 1.0mA): 1V Reverse current (at 75V): 5nA Maximum working temperature: 150°C Maximum storage temperature: 175°C Switching time: 4ns 1N4148 diodes are common in applic
Индекс продукции
A
B
C
D
E
F
G
H
I
J
K
L
M
N
O
P
Q
R
S
T
U
V
W
X
Y
Z
0
1
2
3
4
5
6
7
8
9
Shopping Cart Tel: +86-755-82518276 Email: sales@jinftry.com Skype: +8615019224070, annies65, +8615118125813 QQ: 568248857, 827259012, 316249462 Mobile: +8615019224070, +8615118118839, +8615118125813 WeChat: Send Message
TOP