Renesas Electronics America Inc 2SK3113-ZK-E2-AZ
- 2SK3113-ZK-E2-AZ
- Renesas Electronics America Inc
- N-CHANNEL POWER MOSFET
- Transistors - FETs, MOSFETs - Single
- 2SK3113-ZK-E2-AZ Лист данных
- -
- Bulk
- Lead free / RoHS Compliant
- 12583
- Запасы спот / разрешенные дилеры / излишки на заводе
- Гарантия качества на 1 год 》
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Part Number 2SK3113-ZK-E2-AZ |
Category Transistors - FETs, MOSFETs - Single |
Manufacturer Renesas Electronics America Inc |
Description N-CHANNEL POWER MOSFET |
Package Bulk |
Series - |
Operating Temperature - |
Mounting Type - |
Package / Case - |
Supplier Device Package - |
Technology - |
Power Dissipation (Max) - |
FET Type - |
FET Feature - |
Drain to Source Voltage (Vdss) - |
Current - Continuous Drain (Id) @ 25°C - |
Rds On (Max) @ Id, Vgs - |
Vgs(th) (Max) @ Id - |
Gate Charge (Qg) (Max) @ Vgs - |
Input Capacitance (Ciss) (Max) @ Vds - |
Vgs (Max) - |
Drive Voltage (Max Rds On, Min Rds On) - |
Package_case - |
2SK3113-ZK-E2-AZ Гарантии
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Classification of IGBT modules, difference between application characteristics and MOSFETs
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The pin str
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Picture 01
Basic parameters of 1N4148 diode:
Maximum reverse voltage: 100V
Maximum forward current: 200mA
Peak Forward Current: 450mA
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Maximum working temperature: 150°C
Maximum storage temperature: 175°C
Switching time: 4ns
1N4148 diodes are common in applic