2SK2932-E

Renesas Electronics America Inc 2SK2932-E

Изображение только для справки, пожалуйста, обратитесь к спецификации продукта

  • 2SK2932-E
  • Renesas Electronics America Inc
  • N-CHANNEL POWER MOSFET
  • Transistors - FETs, MOSFETs - Single
  • 2SK2932-E Лист данных
  • -
  • Bulk
  • Lead free / RoHS Compliant,https://www.jinftry.ru/product_detail/2SK2932-ELead free / RoHS Compliant
  • 1056
  • Запасы спот / разрешенные дилеры / излишки на заводе
  • Гарантия качества на 1 год 》
  • Нажмите, чтобы узнать цены
Part Number
2SK2932-E
Category
Transistors - FETs, MOSFETs - Single
Manufacturer
Renesas Electronics America Inc
Description
N-CHANNEL POWER MOSFET
Package
Bulk
Series
-
Operating Temperature
-
Mounting Type
-
Package / Case
-
Supplier Device Package
-
Technology
-
Power Dissipation (Max)
-
FET Type
-
FET Feature
-
Drain to Source Voltage (Vdss)
-
Current - Continuous Drain (Id) @ 25°C
-
Rds On (Max) @ Id, Vgs
-
Vgs(th) (Max) @ Id
-
Gate Charge (Qg) (Max) @ Vgs
-
Input Capacitance (Ciss) (Max) @ Vds
-
Vgs (Max)
-
Drive Voltage (Max Rds On, Min Rds On)
-
Package_case
-

2SK2932-E Гарантии

jinfftry-guarantee1,https://www.jinftry.ru/product_detail/2SK2932-E

jinfftry-guarantee2,https://www.jinftry.ru/product_detail/2SK2932-E

jinfftry-guarantee3,https://www.jinftry.ru/product_detail/2SK2932-E

• Ответьте оперативно

• Гарантированное качество

• Глобальный доступ

• Конкурентоспособная рыночная цена

• Универсальные услуги цепочки поставок

Jinftry, это ваш самый надежный поставщик компонентов, добро пожаловать, чтобы отправить нам запрос, спасибо!

У вас есть вопросы о 2SK2932-E ?
Не стесняйтесь связаться с нами:

+86-755-82518276
+8615019224070, annies65, +8615118125813
568248857, 827259012, 316249462
+8615019224070, +8615118118839, +8615118125813
( Электронная почта в первую очередь )

Комментарии

Оставьте свой комментарий

Renesas Electronics America Inc
Renesas Electronics America Inc,https://www.jinftry.ru/product_detail/2SK2932-E
RJK0379DPA-00#J53,https://www.jinftry.ru/product_detail/2SK2932-E
RJK0379DPA-00#J53

N-CHANNEL POWER MOSFET

RJK0390DPA-00#J5A,https://www.jinftry.ru/product_detail/2SK2932-E
RJK0390DPA-00#J5A

N-CHANNEL POWER MOSFET

RJK0390DPA-WS#J53,https://www.jinftry.ru/product_detail/2SK2932-E
RJK0390DPA-WS#J53

N-CHANNEL POWER MOSFET

RJK0391DPA-WS#J53,https://www.jinftry.ru/product_detail/2SK2932-E
RJK0391DPA-WS#J53

N-CHANNEL POWER MOSFET

2SK2736-E,https://www.jinftry.ru/product_detail/2SK2932-E
2SK2736-E

N-CHANNEL POWER MOSFET

RJK0379DPA-00#J5A,https://www.jinftry.ru/product_detail/2SK2932-E
RJK0379DPA-00#J5A

N-CHANNEL POWER MOSFET

RJK03P7DPA-WS#J5A,https://www.jinftry.ru/product_detail/2SK2932-E
RJK03P7DPA-WS#J5A

N-CHANNEL POWER MOSFET

RJK03P9DPA-WS#J5A,https://www.jinftry.ru/product_detail/2SK2932-E
RJK03P9DPA-WS#J5A

N-CHANNEL POWER MOSFET

SiC helps the application of power semiconductor devices to increase junction temperature, which will greatly change the design pattern of power systems.

SiC helps the application of power semiconductor devices to increase junction temperature, which will greatly change the design pattern of power systems. Since the birth of silicon power semiconductor devices, application demands have been driving the junction temperature to rise, which has now reached 150°C. With the emergence of third-generation wide-bandgap semiconductor devices (such as SiC) and their increasing maturity and full commercialization, their unique high-temperature resistance i

What is a Junction Diode? What are the types of junction diodes?

What is a Junction Diode? A junction diode is a semiconductor device consisting of a structure composed of a P-type semiconductor and an N-type semiconductor. It is also known as a PN junction diode or simply a diode. Junction diodes are one of the most basic and common types of diodes.

The development trend of IGBT (insulated gate bipolar transistor) manufacturers in recent years

PS22A78-E Description:DIPIPMs are intelligent power modules that integrate power devices, drivers, and protection circuitry. Design time is reduced by the use of application-specific HVICs and value-added features such as linear temperature feed-back. Overall efficiency and reliability are increase ed by the use of full gate CSTBT technology and low thermal impedance. Features:   Low-loss, Full Gate CSTBT IGBTs Single Power Supply   Integrated HVICs   Direct Connection to CPUApplications:

Renesas launches SOTB process embedded flash memory low-power technology for energy harvesting and battery-free power supply

Renesas Electronics presented the test results at the 2019 VLSI and Circuit Technology Symposium (June 9-14, 2019) held in Kyoto, Japan on June 12. The new SOTB-based technology has been used in the rissa R7F0E embedded controller, which is specifically designed for energy harvesting applications. Renesas’ unique SOTB technology significantly reduces operating and standby power consumption. Generally speaking, the power consumption in these two states increases and decreases each other: that
Индекс продукции
A
B
C
D
E
F
G
H
I
J
K
L
M
N
O
P
Q
R
S
T
U
V
W
X
Y
Z
0
1
2
3
4
5
6
7
8
9
Shopping Cart Tel: +86-755-82518276 Email: sales@jinftry.com Skype: +8615019224070, annies65, +8615118125813 QQ: 568248857, 827259012, 316249462 Mobile: +8615019224070, +8615118118839, +8615118125813 WeChat: Send Message
TOP