Toshiba Semiconductor and Storage 2SK2866(F)
- 2SK2866(F)
- Toshiba Semiconductor and Storage
- MOSFET N-CH 600V 10A TO220AB
- Transistors - FETs, MOSFETs - Single
- 2SK2866(F) Лист данных
- TO-220-3
- Bulk
- Lead free / RoHS Compliant
- 8174
- Запасы спот / разрешенные дилеры / излишки на заводе
- Гарантия качества на 1 год 》
- Нажмите, чтобы узнать цены
Part Number 2SK2866(F) |
Category Transistors - FETs, MOSFETs - Single |
Manufacturer Toshiba Semiconductor and Storage |
Description MOSFET N-CH 600V 10A TO220AB |
Package Bulk |
Series - |
Operating Temperature 150°C (TJ) |
Mounting Type Through Hole |
Package / Case TO-220-3 |
Supplier Device Package TO-220AB |
Technology MOSFET (Metal Oxide) |
Power Dissipation (Max) 125W (Tc) |
FET Type N-Channel |
FET Feature - |
Drain to Source Voltage (Vdss) 600 V |
Current - Continuous Drain (Id) @ 25°C 10A (Ta) |
Rds On (Max) @ Id, Vgs 750mOhm @ 5A, 10V |
Vgs(th) (Max) @ Id 4V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs 45 nC @ 10 V |
Input Capacitance (Ciss) (Max) @ Vds 2040 pF @ 10 V |
Vgs (Max) ±30V |
Drive Voltage (Max Rds On, Min Rds On) 10V |
Package_case TO-220-3 |
2SK2866(F) Гарантии
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