2SK2503TL

Rohm Semiconductor 2SK2503TL

Изображение только для справки, пожалуйста, обратитесь к спецификации продукта

  • 2SK2503TL
  • Rohm Semiconductor
  • MOSFET N-CH 60V 5A CPT3
  • Transistors - FETs, MOSFETs - Single
  • 2SK2503TL Лист данных
  • TO-252-3, DPak (2 Leads + Tab), SC-63
  • Cut Tape (CT)
  • Lead free / RoHS Compliant,https://www.jinftry.ru/product_detail/2SK2503TLLead free / RoHS Compliant
  • 28044
  • Запасы спот / разрешенные дилеры / излишки на заводе
  • Гарантия качества на 1 год 》
  • Нажмите, чтобы узнать цены
Part Number
2SK2503TL
Category
Transistors - FETs, MOSFETs - Single
Manufacturer
Rohm Semiconductor
Description
MOSFET N-CH 60V 5A CPT3
Package
Cut Tape (CT)
Series
-
Operating Temperature
150°C (TJ)
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package
CPT3
Technology
MOSFET (Metal Oxide)
Power Dissipation (Max)
20W (Tc)
FET Type
N-Channel
FET Feature
-
Drain to Source Voltage (Vdss)
60 V
Current - Continuous Drain (Id) @ 25°C
5A (Ta)
Rds On (Max) @ Id, Vgs
135mOhm @ 2.5A, 10V
Vgs(th) (Max) @ Id
2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
-
Input Capacitance (Ciss) (Max) @ Vds
520 pF @ 10 V
Vgs (Max)
±20V
Drive Voltage (Max Rds On, Min Rds On)
4V, 10V
Package_case
TO-252-3, DPak (2 Leads + Tab), SC-63

2SK2503TL Гарантии

jinfftry-guarantee1,https://www.jinftry.ru/product_detail/2SK2503TL

jinfftry-guarantee2,https://www.jinftry.ru/product_detail/2SK2503TL

jinfftry-guarantee3,https://www.jinftry.ru/product_detail/2SK2503TL

• Ответьте оперативно

• Гарантированное качество

• Глобальный доступ

• Конкурентоспособная рыночная цена

• Универсальные услуги цепочки поставок

Jinftry, это ваш самый надежный поставщик компонентов, добро пожаловать, чтобы отправить нам запрос, спасибо!

У вас есть вопросы о 2SK2503TL ?
Не стесняйтесь связаться с нами:

+86-755-82518276
+8615019224070, annies65, +8615118125813
568248857, 827259012, 316249462
+8615019224070, +8615118118839, +8615118125813
( Электронная почта в первую очередь )

Комментарии

Оставьте свой комментарий

Rohm Semiconductor
Rohm Semiconductor,https://www.jinftry.ru/product_detail/2SK2503TL
RRH140P03TB1,https://www.jinftry.ru/product_detail/2SK2503TL
RRH140P03TB1

MOSFET P-CH 30V 14A 8SOP

RRS130N03TB1,https://www.jinftry.ru/product_detail/2SK2503TL
RRS130N03TB1

MOSFET P-CH 30V 14A 8SOP

RRS125N03TB1,https://www.jinftry.ru/product_detail/2SK2503TL
RRS125N03TB1

MOSFET P-CH 30V 14A 8SOP

RRS110N03TB1,https://www.jinftry.ru/product_detail/2SK2503TL
RRS110N03TB1

MOSFET P-CH 30V 14A 8SOP

RRS100N03TB1,https://www.jinftry.ru/product_detail/2SK2503TL
RRS100N03TB1

MOSFET P-CH 30V 14A 8SOP

RRS070N03TB1,https://www.jinftry.ru/product_detail/2SK2503TL
RRS070N03TB1

MOSFET P-CH 30V 14A 8SOP

RDX120N50FU6,https://www.jinftry.ru/product_detail/2SK2503TL
RDX120N50FU6

MOSFET P-CH 30V 14A 8SOP

RDX060N60FU6,https://www.jinftry.ru/product_detail/2SK2503TL
RDX060N60FU6

MOSFET P-CH 30V 14A 8SOP

SiC helps the application of power semiconductor devices to increase junction temperature, which will greatly change the design pattern of power systems.

SiC helps the application of power semiconductor devices to increase junction temperature, which will greatly change the design pattern of power systems. Since the birth of silicon power semiconductor devices, application demands have been driving the junction temperature to rise, which has now reached 150°C. With the emergence of third-generation wide-bandgap semiconductor devices (such as SiC) and their increasing maturity and full commercialization, their unique high-temperature resistance i

2SC5200 2SA1943 NPN transistor electronic power amplifier, data sheet, application characteristics

The 2SA1943 and 2SC5200 are complementary NPN and PNP power transistors commonly used in electronic power amplifier circuits. When used together, they are often used in high-power audio amplifiers to amplify audio signals.

What is a Junction Diode? What are the types of junction diodes?

What is a Junction Diode? A junction diode is a semiconductor device consisting of a structure composed of a P-type semiconductor and an N-type semiconductor. It is also known as a PN junction diode or simply a diode. Junction diodes are one of the most basic and common types of diodes.

The development trend of IGBT (insulated gate bipolar transistor) manufacturers in recent years

PS22A78-E Description:DIPIPMs are intelligent power modules that integrate power devices, drivers, and protection circuitry. Design time is reduced by the use of application-specific HVICs and value-added features such as linear temperature feed-back. Overall efficiency and reliability are increase ed by the use of full gate CSTBT technology and low thermal impedance. Features:   Low-loss, Full Gate CSTBT IGBTs Single Power Supply   Integrated HVICs   Direct Connection to CPUApplications:
Индекс продукции
A
B
C
D
E
F
G
H
I
J
K
L
M
N
O
P
Q
R
S
T
U
V
W
X
Y
Z
0
1
2
3
4
5
6
7
8
9
Shopping Cart Tel: +86-755-82518276 Email: sales@jinftry.com Skype: +8615019224070, annies65, +8615118125813 QQ: 568248857, 827259012, 316249462 Mobile: +8615019224070, +8615118118839, +8615118125813 WeChat: Send Message
TOP