Sanken 2SK2420
- 2SK2420
- Sanken
- MOSFET N-CH 60V 30A TO220F
- Transistors - FETs, MOSFETs - Single
- 2SK2420 Лист данных
- TO-220-3 Full Pack
- Tape & Reel (TR)
- Lead free / RoHS Compliant
- 18997
- Запасы спот / разрешенные дилеры / излишки на заводе
- Гарантия качества на 1 год 》
- Нажмите, чтобы узнать цены
Part Number 2SK2420 |
Category Transistors - FETs, MOSFETs - Single |
Manufacturer Sanken |
Description MOSFET N-CH 60V 30A TO220F |
Package Tape & Reel (TR) |
Series - |
Operating Temperature 150°C (TJ) |
Mounting Type Through Hole |
Package / Case TO-220-3 Full Pack |
Supplier Device Package TO-220F |
Technology MOSFET (Metal Oxide) |
Power Dissipation (Max) 40W (Tc) |
FET Type N-Channel |
FET Feature - |
Drain to Source Voltage (Vdss) 60 V |
Current - Continuous Drain (Id) @ 25°C 30A (Ta) |
Rds On (Max) @ Id, Vgs 28mOhm @ 15A, 10V |
Vgs(th) (Max) @ Id 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs - |
Input Capacitance (Ciss) (Max) @ Vds 2200 pF @ 25 V |
Vgs (Max) ±20V |
Drive Voltage (Max Rds On, Min Rds On) 10V |
Package_case TO-220-3 Full Pack |
2SK2420 Гарантии
• Ответьте оперативно
• Гарантированное качество
• Глобальный доступ
• Конкурентоспособная рыночная цена
• Универсальные услуги цепочки поставок
Jinftry, это ваш самый надежный поставщик компонентов, добро пожаловать, чтобы отправить нам запрос, спасибо!
У вас есть вопросы о 2SK2420 ?
Не стесняйтесь связаться с нами:
+86-755-82518276
+8615019224070, annies65, +8615118125813
568248857, 827259012, 316249462
+8615019224070, +8615118118839, +8615118125813
( Электронная почта в первую очередь )
Комментарии
Sanken
2SK3800
MOSFET N-CH 40V 70A TO220S
2SK3800VR
MOSFET N-CH 40V 70A TO220S
2SK3800VL
MOSFET N-CH 40V 70A TO220S
SKP253
MOSFET N-CH 40V 70A TO220S
SKP253VR
MOSFET N-CH 40V 70A TO220S
2SK3801
MOSFET N-CH 40V 70A TO220S
FKP202
MOSFET N-CH 40V 70A TO220S
SKP202
MOSFET N-CH 40V 70A TO220S
What is a bipolar transistor and what is its operating mode
SiC helps the application of power semiconductor devices to increase junction temperature, which will greatly change the design pattern of power systems.
SiC helps the application of power semiconductor devices to increase junction temperature, which will greatly change the design pattern of power systems.
Since the birth of silicon power semiconductor devices, application demands have been driving the junction temperature to rise, which has now reached 150°C. With the emergence of third-generation wide-bandgap semiconductor devices (such as SiC) and their increasing maturity and full commercialization, their unique high-temperature resistance i
The latest 2N3055 transistor datasheet, application, and price analysis in 2023
2N3055 is a commonly used power transistor with a wide range of applications and reliable performance. Jinftry will introduce the detailed specifications of the 2N3055 transistor, including its datasheet, characteristics, and parameters. In addition, the application areas of the 2N3055 transistor will be discussed, and its price and market supply and demand will be discussed.
The development trend of IGBT (insulated gate bipolar transistor) manufacturers in recent years
PS22A78-E
Description:DIPIPMs are intelligent power modules that integrate power devices, drivers, and protection circuitry. Design time is reduced by the use of application-specific HVICs and value-added features such as linear temperature feed-back. Overall efficiency and reliability are increase ed by the use of full gate CSTBT technology and low thermal impedance. Features:
Low-loss, Full Gate CSTBT IGBTs Single Power Supply
Integrated HVICs
Direct Connection to CPUApplications: