2SK2376(Q)

Toshiba Semiconductor and Storage 2SK2376(Q)

Изображение только для справки, пожалуйста, обратитесь к спецификации продукта

  • 2SK2376(Q)
  • Toshiba Semiconductor and Storage
  • MOSFET N-CH 60V 45A TO220FL
  • Transistors - FETs, MOSFETs - Single
  • 2SK2376(Q) Лист данных
  • TO-220-3, Short Tab
  • Jinftry-Reel®
  • Lead free / RoHS Compliant,https://www.jinftry.ru/product_detail/2SK2376-QLead free / RoHS Compliant
  • 2821
  • Запасы спот / разрешенные дилеры / излишки на заводе
  • Гарантия качества на 1 год 》
  • Нажмите, чтобы узнать цены
Part Number
2SK2376(Q)
Category
Transistors - FETs, MOSFETs - Single
Manufacturer
Toshiba Semiconductor and Storage
Description
MOSFET N-CH 60V 45A TO220FL
Package
Jinftry-Reel®
Series
-
Operating Temperature
150°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-220-3, Short Tab
Supplier Device Package
TO-220FL
Technology
MOSFET (Metal Oxide)
Power Dissipation (Max)
100W (Tc)
FET Type
N-Channel
FET Feature
-
Drain to Source Voltage (Vdss)
60 V
Current - Continuous Drain (Id) @ 25°C
45A (Ta)
Rds On (Max) @ Id, Vgs
17mOhm @ 25A, 10V
Vgs(th) (Max) @ Id
2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
3350 pF @ 10 V
Vgs (Max)
±20V
Drive Voltage (Max Rds On, Min Rds On)
4V, 10V
Package_case
TO-220-3, Short Tab

2SK2376(Q) Гарантии

jinfftry-guarantee1,https://www.jinftry.ru/product_detail/2SK2376-Q

jinfftry-guarantee2,https://www.jinftry.ru/product_detail/2SK2376-Q

jinfftry-guarantee3,https://www.jinftry.ru/product_detail/2SK2376-Q

• Ответьте оперативно

• Гарантированное качество

• Глобальный доступ

• Конкурентоспособная рыночная цена

• Универсальные услуги цепочки поставок

Jinftry, это ваш самый надежный поставщик компонентов, добро пожаловать, чтобы отправить нам запрос, спасибо!

У вас есть вопросы о 2SK2376(Q) ?
Не стесняйтесь связаться с нами:

+86-755-82518276
+8615019224070, annies65, +8615118125813
568248857, 827259012, 316249462
+8615019224070, +8615118118839, +8615118125813
( Электронная почта в первую очередь )

Комментарии

Оставьте свой комментарий

Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage,https://www.jinftry.ru/product_detail/2SK2376-Q
TPCP8001-H(TE85LFM,https://www.jinftry.ru/product_detail/2SK2376-Q
TPCP8001-H(TE85LFM

MOSFET N-CH 30V 7.2A PS-8

TPCF8102(TE85L,F,M,https://www.jinftry.ru/product_detail/2SK2376-Q
TPCF8102(TE85L,F,M

MOSFET N-CH 30V 7.2A PS-8

TPCA8A01-H(TE12L,Q,https://www.jinftry.ru/product_detail/2SK2376-Q
TPCA8A01-H(TE12L,Q

MOSFET N-CH 30V 7.2A PS-8

TPCA8105(TE12L,Q,M,https://www.jinftry.ru/product_detail/2SK2376-Q
TPCA8105(TE12L,Q,M

MOSFET N-CH 30V 7.2A PS-8

TPCA8103(TE12L,Q,M,https://www.jinftry.ru/product_detail/2SK2376-Q
TPCA8103(TE12L,Q,M

MOSFET N-CH 30V 7.2A PS-8

TPCA8102(TE12L,Q,M,https://www.jinftry.ru/product_detail/2SK2376-Q
TPCA8102(TE12L,Q,M

MOSFET N-CH 30V 7.2A PS-8

TPCA8031-H(TE12L,Q,https://www.jinftry.ru/product_detail/2SK2376-Q
TPCA8031-H(TE12L,Q

MOSFET N-CH 30V 7.2A PS-8

TPCA8023-H(TE12LQM,https://www.jinftry.ru/product_detail/2SK2376-Q
TPCA8023-H(TE12LQM

MOSFET N-CH 30V 7.2A PS-8

What is a power module

What is a power module Features of the power module Power drive module role What are the power drive modules ,Provide you with power drive modules,A Power Module is a highly integrated electronic device that controls and converts electrical energy. It usually includes multiple power semiconductor devices (such as IGBTs, MOSFETs, diodes, etc.),

Datasheet and working principle of 1N4001 rectifier diode

Friends who are familiar with diodes should know that 1N4001 is a common rectifier diode used to convert alternating current into direct current. This type of diode has a wide range of applications in electronic equipment and circuits.

What are IGBTs? How to improve the thermal performance design of IGBT on PCB

What are IGBTs? How to improve the thermal performance design of IGBT on PCB IGBT - Insulated Gate Bipolar Transistor. An IGBT is a power semiconductor device used in high voltage and high current applications. They are mainly used as switches in power electronic circuits. It's worth noting in the name IGBT, which has an insulated gate like a FET and a bipolar transistor like a BJT. The main reason for this is that an IGBT is indeed a device that combines the advantages of both transistors

Toshiba TLP5222 gate driver

Toshiba TLP5222 gate driver Toshiba TLP5222 Gate Driver Optocouplers provide a highly integrated, versatile, 2.5A output current gate driver in a long creepage and gap SO16L package. The TLP5222 includes functions such as desaturation detection, isolated fault status feedback, soft gate shutdown, active Miller clamp, undervoltage lockout and automatic fault status reset. Toshiba TLP5222 gate driver optocoupler integrates two infrared light emitting diodes (LEDs) and two high gain high speed
Индекс продукции
A
B
C
D
E
F
G
H
I
J
K
L
M
N
O
P
Q
R
S
T
U
V
W
X
Y
Z
0
1
2
3
4
5
6
7
8
9
Shopping Cart Tel: +86-755-82518276 Email: sales@jinftry.com Skype: +8615019224070, annies65, +8615118125813 QQ: 568248857, 827259012, 316249462 Mobile: +8615019224070, +8615118118839, +8615118125813 WeChat: Send Message
TOP