2SK208-GR(TE85L,F)

Toshiba Semiconductor and Storage 2SK208-GR(TE85L,F)

Изображение только для справки, пожалуйста, обратитесь к спецификации продукта

  • 2SK208-GR(TE85L,F)
  • Toshiba Semiconductor and Storage
  • JFET N-CH 50V SC59
  • Transistors - JFETs
  • 2SK208-GR(TE85L,F) Лист данных
  • TO-236-3, SC-59, SOT-23-3
  • Cut Tape (CT)
  • Lead free / RoHS Compliant,https://www.jinftry.ru/product_detail/2SK208-GR-TE85L-FLead free / RoHS Compliant
  • 1190
  • Запасы спот / разрешенные дилеры / излишки на заводе
  • Гарантия качества на 1 год 》
  • Нажмите, чтобы узнать цены
Part Number
2SK208-GR(TE85L,F)
Category
Transistors - JFETs
Manufacturer
Toshiba Semiconductor and Storage
Description
JFET N-CH 50V SC59
Package
Cut Tape (CT)
Series
-
Operating Temperature
125°C (TJ)
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Supplier Device Package
SC-59
Power - Max
100 mW
FET Type
N-Channel
Drain to Source Voltage (Vdss)
-
Input Capacitance (Ciss) (Max) @ Vds
8.2pF @ 10V
Voltage - Breakdown (V(BR)GSS)
50 V
Current - Drain (Idss) @ Vds (Vgs=0)
2.6 mA @ 10 V
Voltage - Cutoff (VGS off) @ Id
400 mV @ 100 nA
Resistance - RDS(On)
-
Current Drain (Id) - Max
6.5 mA
Package_case
TO-236-3, SC-59, SOT-23-3

2SK208-GR(TE85L,F) Гарантии

jinfftry-guarantee1,https://www.jinftry.ru/product_detail/2SK208-GR-TE85L-F

jinfftry-guarantee2,https://www.jinftry.ru/product_detail/2SK208-GR-TE85L-F

jinfftry-guarantee3,https://www.jinftry.ru/product_detail/2SK208-GR-TE85L-F

• Ответьте оперативно

• Гарантированное качество

• Глобальный доступ

• Конкурентоспособная рыночная цена

• Универсальные услуги цепочки поставок

Jinftry, это ваш самый надежный поставщик компонентов, добро пожаловать, чтобы отправить нам запрос, спасибо!

У вас есть вопросы о 2SK208-GR(TE85L,F) ?
Не стесняйтесь связаться с нами:

+86-755-82518276
+8615019224070, annies65, +8615118125813
568248857, 827259012, 316249462
+8615019224070, +8615118118839, +8615118125813
( Электронная почта в первую очередь )

Комментарии

Оставьте свой комментарий

Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage,https://www.jinftry.ru/product_detail/2SK208-GR-TE85L-F
2SK2145-GR(TE85L,F,https://www.jinftry.ru/product_detail/2SK208-GR-TE85L-F
2SK2145-GR(TE85L,F

MOSFET 2N-CH JFET 50V SMV

2SK3320-BL(TE85L,F,https://www.jinftry.ru/product_detail/2SK208-GR-TE85L-F
2SK3320-BL(TE85L,F

MOSFET 2N-CH JFET 50V SMV

2SK208-R(TE85L,F),https://www.jinftry.ru/product_detail/2SK208-GR-TE85L-F
2SK208-R(TE85L,F)

MOSFET 2N-CH JFET 50V SMV

2SK879-GR(TE85L,F),https://www.jinftry.ru/product_detail/2SK208-GR-TE85L-F
2SK879-GR(TE85L,F)

MOSFET 2N-CH JFET 50V SMV

2SK2145-Y(TE85L,F),https://www.jinftry.ru/product_detail/2SK208-GR-TE85L-F
2SK2145-Y(TE85L,F)

MOSFET 2N-CH JFET 50V SMV

2SK208-O(TE85L,F),https://www.jinftry.ru/product_detail/2SK208-GR-TE85L-F
2SK208-O(TE85L,F)

MOSFET 2N-CH JFET 50V SMV

TPCP8F01(TE85L,F,M,https://www.jinftry.ru/product_detail/2SK208-GR-TE85L-F
TPCP8F01(TE85L,F,M

MOSFET 2N-CH JFET 50V SMV

SSM6L14FE(TE85L,F),https://www.jinftry.ru/product_detail/2SK208-GR-TE85L-F
SSM6L14FE(TE85L,F)

MOSFET 2N-CH JFET 50V SMV

An introduction to the IGBT module CM1000DU-34NF from Powerex Inc. and its technical applications

An introduction to the IGBT module CM1000DU-34NF from Powerex Inc. and its technical applications IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the advantages of MOSFET (Metal Oxide Semiconductor Field Effect Transistor) and BJT (Bipolar Transistor). It is widely used in the field of power electronics and used in switching power supplies. , motor drive, inverter and other applications. IGBT module CM1000DU-34NF The IGBT module is a highly efficient and comp

2SC5200 2SA1943 NPN transistor electronic power amplifier, data sheet, application characteristics

The 2SA1943 and 2SC5200 are complementary NPN and PNP power transistors commonly used in electronic power amplifier circuits. When used together, they are often used in high-power audio amplifiers to amplify audio signals.

Classification of IGBT modules, difference between application characteristics and MOSFETs

Classification of IGBT modules, difference between application characteristics and MOSFETs Both MOSFETs (Metal Oxide Semiconductor Field Effect Transistors) and IGBTs (Insulated Gate Bipolar Transistors) are commonly used switching devices in power electronics. They each have their own characteristics and application scenarios, the following are their main differences:

The most complete introduction to IGBT modules in 2023

IGBTs are used in many applications, such as motor drives, industrial control, power transmission, renewable energy, and electric transportation, mainly because IGBTs provide a convenient and reliable power-switching solution for handling high-power and high-voltage applications.
Индекс продукции
A
B
C
D
E
F
G
H
I
J
K
L
M
N
O
P
Q
R
S
T
U
V
W
X
Y
Z
0
1
2
3
4
5
6
7
8
9
Shopping Cart Tel: +86-755-82518276 Email: sales@jinftry.com Skype: +8615019224070, annies65, +8615118125813 QQ: 568248857, 827259012, 316249462 Mobile: +8615019224070, +8615118118839, +8615118125813 WeChat: Send Message
TOP