Renesas Electronics America Inc 2SJ690-T1B-AT
Изображение только для справки, пожалуйста, обратитесь к спецификации продукта
- 2SJ690-T1B-AT
- Renesas Electronics America Inc
- MOSFET P-CH 30V 2.5A SC96-3
- Transistors - FETs, MOSFETs - Single
- 2SJ690-T1B-AT Лист данных
- SC-96
- Jinftry-Reel®
-
Lead free / RoHS Compliant - 1361
- Запасы спот / разрешенные дилеры / излишки на заводе
- Гарантия качества на 1 год 》
- Нажмите, чтобы узнать цены
Службы доставки:
Способы оплаты:
| Part Number 2SJ690-T1B-AT |
| Category Transistors - FETs, MOSFETs - Single |
| Manufacturer Renesas Electronics America Inc |
| Description MOSFET P-CH 30V 2.5A SC96-3 |
| Package Jinftry-Reel® |
| Series - |
| Operating Temperature 150°C |
| Mounting Type Surface Mount |
| Package / Case SC-96 |
| Supplier Device Package SC-96-3, Thin Mini Mold |
| Technology MOSFET (Metal Oxide) |
| Power Dissipation (Max) 200mW (Ta) |
| FET Type P-Channel |
| FET Feature - |
| Drain to Source Voltage (Vdss) 30 V |
| Current - Continuous Drain (Id) @ 25°C 2.5A (Ta) |
| Rds On (Max) @ Id, Vgs 119mOhm @ 1A, 4.5V |
| Vgs(th) (Max) @ Id 1.5V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs 5.2 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds 450 pF @ 10 V |
| Vgs (Max) ±12V |
| Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V |
| Package_case SC-96 |
2SJ690-T1B-AT Гарантии
• Ответьте оперативно
• Гарантированное качество
• Глобальный доступ
• Конкурентоспособная рыночная цена
• Универсальные услуги цепочки поставок
Jinftry, это ваш самый надежный поставщик компонентов, добро пожаловать, чтобы отправить нам запрос, спасибо!
У вас есть вопросы о 2SJ690-T1B-AT ?
Не стесняйтесь связаться с нами:
+86-755-82518276
+8615019224070, annies65, +8615118125813
568248857, 827259012, 316249462
+8615019224070, +8615118118839, +8615118125813
( Электронная почта в первую очередь )
2SJ690-T1B-AT сопутствующие товары
Комментарии
Renesas Electronics America Inc
H5N2007LSTL-E
MOSFET N-CH HS SW TO-263
H5N2307LSTL-E
MOSFET N-CH HS SW TO-263
HAT1047RWS-E
MOSFET N-CH HS SW TO-263
HAT1069C-EL-E
MOSFET N-CH HS SW TO-263
HAT1127HWS-E
MOSFET N-CH HS SW TO-263
HAT2033RWS-E
MOSFET N-CH HS SW TO-263
HAT2165HWS-E
MOSFET N-CH HS SW TO-263
HAT2166HWS-E
MOSFET N-CH HS SW TO-263
What is a bipolar transistor and what is its operating mode
An introduction to the IGBT module CM1000DU-34NF from Powerex Inc. and its technical applications
An introduction to the IGBT module CM1000DU-34NF from Powerex Inc. and its technical applications
IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the advantages of MOSFET (Metal Oxide Semiconductor Field Effect Transistor) and BJT (Bipolar Transistor). It is widely used in the field of power electronics and used in switching power supplies. , motor drive, inverter and other applications.
IGBT module CM1000DU-34NF The IGBT module is a highly efficient and comp
The characteristics of 1N4007 diode and 1N4001 diode, can 1N4007 be used instead of 1N4001?
The characteristics of 1N4007 diode and 1N4001 diode, can 1N4007 be used instead of 1N4001?
"1N4007" and "1N4001" are two types of diode information, which are two common rectifier diodes.
1N4007 and 1N4001 are part of a series of standard recovery time rectifier diodes, mainly used for AC (alternating current) to DC (direct current) conversion.
Infineon Ximenkang IGBT FF400R12KT4HOSA1 module series
FF450R12KE4 with EDA/CAD model made by Infineon. FF450R12KE4 provides MODULE package, which is a part of Module, Trans IGBT Module N-CH 1200V 520A 2400000mW 7-Pin 62MM-1 Tray, IGBT Modules N-CH 1.2KV 520A.
The following are the IGBT module series models:
SKM100GAL128D, SKM145GAL128D, SKM200GAL128D, SKM300GAL128D, SKM400GAL128D, SKM145GAR128D
SKM400GAR128D, SKM300GA12V, SKM400GA12V, SKM600GA12V, SKM150GAL12V, SKM400GAL12V, SKM50GB12T4, SKM75GB12T4, SKM100GB12T4, SKM150GB12T4, SKM200GB12T4
