Sanyo 2SJ662-DL-E
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- 2SJ662-DL-E
- Sanyo
- P-CHANNEL SILICON MOSFET
- Transistors - FETs, MOSFETs - Arrays
- 2SJ662-DL-E Лист данных
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- Bulk
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Lead free / RoHS Compliant - 12078
- Запасы спот / разрешенные дилеры / излишки на заводе
- Гарантия качества на 1 год 》
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| Part Number 2SJ662-DL-E |
| Category Transistors - FETs, MOSFETs - Arrays |
| Manufacturer Sanyo |
| Description P-CHANNEL SILICON MOSFET |
| Package Bulk |
| Series - |
| Operating Temperature - |
| Mounting Type - |
| Package / Case - |
| Supplier Device Package - |
| Power - Max - |
| FET Type - |
| FET Feature - |
| Drain to Source Voltage (Vdss) - |
| Current - Continuous Drain (Id) @ 25°C - |
| Rds On (Max) @ Id, Vgs - |
| Vgs(th) (Max) @ Id - |
| Gate Charge (Qg) (Max) @ Vgs - |
| Input Capacitance (Ciss) (Max) @ Vds - |
| Package_case - |
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Classification of IGBT modules, difference between application characteristics and MOSFETs
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Both MOSFETs (Metal Oxide Semiconductor Field Effect Transistors) and IGBTs (Insulated Gate Bipolar Transistors) are commonly used switching devices in power electronics. They each have their own characteristics and application scenarios, the following are their main differences:
The most complete introduction to IGBT modules in 2023
IGBTs are used in many applications, such as motor drives, industrial control, power transmission, renewable energy, and electric transportation, mainly because IGBTs provide a convenient and reliable power-switching solution for handling high-power and high-voltage applications.
ON NTD2955G series packages and features are different
NTD2955 is a P-type MOSFET (Metal Oxide Semiconductor Field Effect Transistor) produced by ON Semiconductor. NTD2955 series models may have some changes, such as NTD2955PT4G, NTD2955T4G, NTD2955T4, NTD2955G, NTD2955-1G, etc. These models basically have the same parameters, but may differ in packaging or other characteristics.
Infineon Ximenkang IGBT FF400R12KT4HOSA1 module series
FF450R12KE4 with EDA/CAD model made by Infineon. FF450R12KE4 provides MODULE package, which is a part of Module, Trans IGBT Module N-CH 1200V 520A 2400000mW 7-Pin 62MM-1 Tray, IGBT Modules N-CH 1.2KV 520A.
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