2SJ632-TD-E

ON Semiconductor 2SJ632-TD-E

Изображение только для справки, пожалуйста, обратитесь к спецификации продукта

  • 2SJ632-TD-E
  • ON Semiconductor
  • 2SJ632 - P-CHANNEL SILICON MOSFE
  • Transistors - FETs, MOSFETs - Single
  • 2SJ632-TD-E Лист данных
  • -
  • Bulk
  • Lead free / RoHS Compliant,https://www.jinftry.ru/product_detail/2SJ632-TD-ELead free / RoHS Compliant
  • 15561
  • Запасы спот / разрешенные дилеры / излишки на заводе
  • Гарантия качества на 1 год 》
  • Нажмите, чтобы узнать цены
Part Number
2SJ632-TD-E
Category
Transistors - FETs, MOSFETs - Single
Manufacturer
ON Semiconductor
Description
2SJ632 - P-CHANNEL SILICON MOSFE
Package
Bulk
Series
-
Operating Temperature
-
Mounting Type
-
Package / Case
-
Supplier Device Package
-
Technology
-
Power Dissipation (Max)
-
FET Type
-
FET Feature
-
Drain to Source Voltage (Vdss)
-
Current - Continuous Drain (Id) @ 25°C
-
Rds On (Max) @ Id, Vgs
-
Vgs(th) (Max) @ Id
-
Gate Charge (Qg) (Max) @ Vgs
-
Input Capacitance (Ciss) (Max) @ Vds
-
Vgs (Max)
-
Drive Voltage (Max Rds On, Min Rds On)
-
Package_case
-

2SJ632-TD-E Гарантии

jinfftry-guarantee1,https://www.jinftry.ru/product_detail/2SJ632-TD-E

jinfftry-guarantee2,https://www.jinftry.ru/product_detail/2SJ632-TD-E

jinfftry-guarantee3,https://www.jinftry.ru/product_detail/2SJ632-TD-E

• Ответьте оперативно

• Гарантированное качество

• Глобальный доступ

• Конкурентоспособная рыночная цена

• Универсальные услуги цепочки поставок

Jinftry, это ваш самый надежный поставщик компонентов, добро пожаловать, чтобы отправить нам запрос, спасибо!

У вас есть вопросы о 2SJ632-TD-E ?
Не стесняйтесь связаться с нами:

+86-755-82518276
+8615019224070, annies65, +8615118125813
568248857, 827259012, 316249462
+8615019224070, +8615118118839, +8615118125813
( Электронная почта в первую очередь )

Комментарии

Оставьте свой комментарий

ON Semiconductor
ON Semiconductor,https://www.jinftry.ru/product_detail/2SJ632-TD-E
FDD8880-SN00319,https://www.jinftry.ru/product_detail/2SJ632-TD-E
FDD8880-SN00319

FDD8880 - 35A, 30V, N-CHANNEL PO

CPH6424-TL-E,https://www.jinftry.ru/product_detail/2SJ632-TD-E
CPH6424-TL-E

FDD8880 - 35A, 30V, N-CHANNEL PO

FDS9431A-F085CT,https://www.jinftry.ru/product_detail/2SJ632-TD-E
FDS9431A-F085CT

FDD8880 - 35A, 30V, N-CHANNEL PO

NTDV20N06LT4G,https://www.jinftry.ru/product_detail/2SJ632-TD-E
NTDV20N06LT4G

FDD8880 - 35A, 30V, N-CHANNEL PO

FDMS0352S,https://www.jinftry.ru/product_detail/2SJ632-TD-E
FDMS0352S

FDD8880 - 35A, 30V, N-CHANNEL PO

FDM6296-G,https://www.jinftry.ru/product_detail/2SJ632-TD-E
FDM6296-G

FDD8880 - 35A, 30V, N-CHANNEL PO

NTD4N60T4,https://www.jinftry.ru/product_detail/2SJ632-TD-E
NTD4N60T4

FDD8880 - 35A, 30V, N-CHANNEL PO

2SJ634-TL-E,https://www.jinftry.ru/product_detail/2SJ632-TD-E
2SJ634-TL-E

FDD8880 - 35A, 30V, N-CHANNEL PO

What is diode?

What are diodes and their characteristics in electronics? Diodes are fundamental components in modern electronics, playing crucial roles in various applications. These tiny yet powerful devices control the flow of electrical current, ensuring the proper functioning of countless electronic circuits. Understanding diodes and their importance is essential for anyone involved in electronics, from hobbyists to professionals.

What is a bipolar transistor and what is its operating mode

Infineon Ximenkang IGBT FF400R12KT4HOSA1 module series

FF450R12KE4 with EDA/CAD model made by Infineon. FF450R12KE4 provides MODULE package, which is a part of Module, Trans IGBT Module N-CH 1200V 520A 2400000mW 7-Pin 62MM-1 Tray, IGBT Modules N-CH 1.2KV 520A. The following are the IGBT module series models: SKM100GAL128D, SKM145GAL128D, SKM200GAL128D, SKM300GAL128D, SKM400GAL128D, SKM145GAR128D SKM400GAR128D, SKM300GA12V, SKM400GA12V, SKM600GA12V, SKM150GAL12V, SKM400GAL12V, SKM50GB12T4, SKM75GB12T4, SKM100GB12T4, SKM150GB12T4, SKM200GB12T4

onsemi NTMC083NP10M5L Power MOSFET

onsemi NTMC083NP10M5L Power MOSFET The ON Semiconductor NTMC083NP10M5L MOSFET is designed with low gate charge (QG) and capacitance to minimize driver losses. The MOSFET features low drain-source on-resistance RDS to minimize conduction losses. The device features a standard size (5mm x 6mm) compact design without ESD protection. The NTMC083NP10M5L power MOSFET is ideal for power tools, battery powered vacuums, unmanned aerial vehicles (UAVs)/drones, material handling, motor drives and home aut
Индекс продукции
A
B
C
D
E
F
G
H
I
J
K
L
M
N
O
P
Q
R
S
T
U
V
W
X
Y
Z
0
1
2
3
4
5
6
7
8
9
Shopping Cart Tel: +86-755-82518276 Email: sales@jinftry.com Skype: +8615019224070, annies65, +8615118125813 QQ: 568248857, 827259012, 316249462 Mobile: +8615019224070, +8615118118839, +8615118125813 WeChat: Send Message
TOP