2SJ317NYTR-E

Renesas Electronics America Inc 2SJ317NYTR-E

Изображение только для справки, пожалуйста, обратитесь к спецификации продукта

  • 2SJ317NYTR-E
  • Renesas Electronics America Inc
  • P-CHANNEL SMALL SIGNAL MOSFET
  • Transistors - FETs, MOSFETs - Single
  • 2SJ317NYTR-E Лист данных
  • -
  • Bulk
  • Lead free / RoHS Compliant,https://www.jinftry.ru/product_detail/2SJ317NYTR-ELead free / RoHS Compliant
  • 21300
  • Запасы спот / разрешенные дилеры / излишки на заводе
  • Гарантия качества на 1 год 》
  • Нажмите, чтобы узнать цены
Part Number
2SJ317NYTR-E
Category
Transistors - FETs, MOSFETs - Single
Manufacturer
Renesas Electronics America Inc
Description
P-CHANNEL SMALL SIGNAL MOSFET
Package
Bulk
Series
-
Operating Temperature
-
Mounting Type
-
Package / Case
-
Supplier Device Package
-
Technology
-
Power Dissipation (Max)
-
FET Type
-
FET Feature
-
Drain to Source Voltage (Vdss)
-
Current - Continuous Drain (Id) @ 25°C
-
Rds On (Max) @ Id, Vgs
-
Vgs(th) (Max) @ Id
-
Gate Charge (Qg) (Max) @ Vgs
-
Input Capacitance (Ciss) (Max) @ Vds
-
Vgs (Max)
-
Drive Voltage (Max Rds On, Min Rds On)
-
Package_case
-

2SJ317NYTR-E Гарантии

jinfftry-guarantee1,https://www.jinftry.ru/product_detail/2SJ317NYTR-E

jinfftry-guarantee2,https://www.jinftry.ru/product_detail/2SJ317NYTR-E

jinfftry-guarantee3,https://www.jinftry.ru/product_detail/2SJ317NYTR-E

• Ответьте оперативно

• Гарантированное качество

• Глобальный доступ

• Конкурентоспособная рыночная цена

• Универсальные услуги цепочки поставок

Jinftry, это ваш самый надежный поставщик компонентов, добро пожаловать, чтобы отправить нам запрос, спасибо!

У вас есть вопросы о 2SJ317NYTR-E ?
Не стесняйтесь связаться с нами:

+86-755-82518276
+8615019224070, annies65, +8615118125813
568248857, 827259012, 316249462
+8615019224070, +8615118118839, +8615118125813
( Электронная почта в первую очередь )

Комментарии

Оставьте свой комментарий

Renesas Electronics America Inc
Renesas Electronics America Inc,https://www.jinftry.ru/product_detail/2SJ317NYTR-E
RJK03K2DPA-00#J5A,https://www.jinftry.ru/product_detail/2SJ317NYTR-E
RJK03K2DPA-00#J5A

N-CHANNEL POWER SWITCHING MOSFET

RJK0211DPA-00#J5A,https://www.jinftry.ru/product_detail/2SJ317NYTR-E
RJK0211DPA-00#J5A

N-CHANNEL POWER SWITCHING MOSFET

UPA2734GR-E2-AT,https://www.jinftry.ru/product_detail/2SJ317NYTR-E
UPA2734GR-E2-AT

N-CHANNEL POWER SWITCHING MOSFET

2SK4077-ZK-E1-AY,https://www.jinftry.ru/product_detail/2SJ317NYTR-E
2SK4077-ZK-E1-AY

N-CHANNEL POWER SWITCHING MOSFET

UPA2734GR-E1-AT,https://www.jinftry.ru/product_detail/2SJ317NYTR-E
UPA2734GR-E1-AT

N-CHANNEL POWER SWITCHING MOSFET

UPA2727UT1A-E1-AY,https://www.jinftry.ru/product_detail/2SJ317NYTR-E
UPA2727UT1A-E1-AY

N-CHANNEL POWER SWITCHING MOSFET

UPA2200T1M-T2-AT,https://www.jinftry.ru/product_detail/2SJ317NYTR-E
UPA2200T1M-T2-AT

N-CHANNEL POWER SWITCHING MOSFET

UPA2210T1M-T1-AT,https://www.jinftry.ru/product_detail/2SJ317NYTR-E
UPA2210T1M-T1-AT

N-CHANNEL POWER SWITCHING MOSFET

SiC helps the application of power semiconductor devices to increase junction temperature, which will greatly change the design pattern of power systems.

SiC helps the application of power semiconductor devices to increase junction temperature, which will greatly change the design pattern of power systems. Since the birth of silicon power semiconductor devices, application demands have been driving the junction temperature to rise, which has now reached 150°C. With the emergence of third-generation wide-bandgap semiconductor devices (such as SiC) and their increasing maturity and full commercialization, their unique high-temperature resistance i

What is a Junction Diode? What are the types of junction diodes?

What is a Junction Diode? A junction diode is a semiconductor device consisting of a structure composed of a P-type semiconductor and an N-type semiconductor. It is also known as a PN junction diode or simply a diode. Junction diodes are one of the most basic and common types of diodes.

1N4148 diode, characteristics - can use 1n4148w, 1n4448 diode instead

1N4148 diode, characteristics - can use 1n4148w, 1n4448 diode instead The 1N4148 diode is a common fast-switching diode used in a variety of electronic devices. Picture 01 Basic parameters of 1N4148 diode: Maximum reverse voltage: 100V Maximum forward current: 200mA Peak Forward Current: 450mA Forward Voltage (at 1.0mA): 1V Reverse current (at 75V): 5nA Maximum working temperature: 150°C Maximum storage temperature: 175°C Switching time: 4ns 1N4148 diodes are common in applic

Renesas Electronics - New PMIC reference designs speed time to market

Renesas Electronics - New PMIC reference designs speed time to market
Индекс продукции
A
B
C
D
E
F
G
H
I
J
K
L
M
N
O
P
Q
R
S
T
U
V
W
X
Y
Z
0
1
2
3
4
5
6
7
8
9
Shopping Cart Tel: +86-755-82518276 Email: sales@jinftry.com Skype: +8615019224070, annies65, +8615118125813 QQ: 568248857, 827259012, 316249462 Mobile: +8615019224070, +8615118118839, +8615118125813 WeChat: Send Message
TOP