ON Semiconductor 2SD826G
Изображение только для справки, пожалуйста, обратитесь к спецификации продукта
- 2SD826G
- ON Semiconductor
- SMALL SIGNAL BIPOLAR TRANSTR NPN
- Transistors - Bipolar (BJT) - Single
- 2SD826G Лист данных
- -
- Bulk
-
Lead free / RoHS Compliant - 2722
- Запасы спот / разрешенные дилеры / излишки на заводе
- Гарантия качества на 1 год 》
- Нажмите, чтобы узнать цены
Службы доставки:
Способы оплаты:
| Part Number 2SD826G |
| Category Transistors - Bipolar (BJT) - Single |
| Manufacturer ON Semiconductor |
| Description SMALL SIGNAL BIPOLAR TRANSTR NPN |
| Package Bulk |
| Series - |
| Operating Temperature - |
| Mounting Type - |
| Package / Case - |
| Supplier Device Package - |
| Power - Max - |
| Transistor Type - |
| Current - Collector (Ic) (Max) - |
| Voltage - Collector Emitter Breakdown (Max) - |
| Vce Saturation (Max) @ Ib, Ic - |
| Current - Collector Cutoff (Max) - |
| DC Current Gain (hFE) (Min) @ Ic, Vce - |
| Frequency - Transition - |
| Package_case - |
2SD826G Гарантии
• Ответьте оперативно
• Гарантированное качество
• Глобальный доступ
• Конкурентоспособная рыночная цена
• Универсальные услуги цепочки поставок
Jinftry, это ваш самый надежный поставщик компонентов, добро пожаловать, чтобы отправить нам запрос, спасибо!
У вас есть вопросы о 2SD826G ?
Не стесняйтесь связаться с нами:
+86-755-82518276
+8615019224070, annies65, +8615118125813
568248857, 827259012, 316249462
+8615019224070, +8615118118839, +8615118125813
( Электронная почта в первую очередь )
2SD826G сопутствующие товары
Комментарии
ON Semiconductor
2SA1434-TB-E
BIP PNP 0.1A 50V
2SC5310-6-TB-E
BIP PNP 0.1A 50V
2SB631KF
BIP PNP 0.1A 50V
SJD1031T4
BIP PNP 0.1A 50V
MJE18206
BIP PNP 0.1A 50V
2SC4159D
BIP PNP 0.1A 50V
2SC536F-SPA-AC
BIP PNP 0.1A 50V
2SA2014-TD-E
BIP PNP 0.1A 50V
SiC helps the application of power semiconductor devices to increase junction temperature, which will greatly change the design pattern of power systems.
SiC helps the application of power semiconductor devices to increase junction temperature, which will greatly change the design pattern of power systems.
Since the birth of silicon power semiconductor devices, application demands have been driving the junction temperature to rise, which has now reached 150°C. With the emergence of third-generation wide-bandgap semiconductor devices (such as SiC) and their increasing maturity and full commercialization, their unique high-temperature resistance i
What is a Junction Diode? What are the types of junction diodes?
What is a Junction Diode? A junction diode is a semiconductor device consisting of a structure composed of a P-type semiconductor and an N-type semiconductor. It is also known as a PN junction diode or simply a diode. Junction diodes are one of the most basic and common types of diodes.
onsemi NTMC083NP10M5L Power MOSFET
onsemi NTMC083NP10M5L Power MOSFET
The ON Semiconductor NTMC083NP10M5L MOSFET is designed with low gate charge (QG) and capacitance to minimize driver losses. The MOSFET features low drain-source on-resistance RDS to minimize conduction losses. The device features a standard size (5mm x 6mm) compact design without ESD protection. The NTMC083NP10M5L power MOSFET is ideal for power tools, battery powered vacuums, unmanned aerial vehicles (UAVs)/drones, material handling, motor drives and home aut
NCD57085 and NCV57085 onsemi
NCD57085 and NCV57085 onsemi
ON Semiconductor NCD57085/NCV57085 isolated IGBT gate driver provides 2.5kVrms internal current isolation and current detection protection, with soft shutdown and fault reporting functions. NCD57085/NCV57085 are designed to achieve high system efficiency and reliability in high-power applications. These devices have a wide input bias voltage range and signal level of 3.3V-20.0V, and a wide output bias voltage range of up to 30V. The safety features of NCD57085/NCV57
