2SD2014

Sanken 2SD2014

Изображение только для справки, пожалуйста, обратитесь к спецификации продукта

  • 2SD2014
  • Sanken
  • TRANS NPN DARL 80V 4A TO220F
  • Transistors - Bipolar (BJT) - Single
  • 2SD2014 Лист данных
  • TO-220-3 Full Pack
  • Cut Tape (CT)
  • Lead free / RoHS Compliant,https://www.jinftry.ru/product_detail/2SD2014Lead free / RoHS Compliant
  • 16606
  • Запасы спот / разрешенные дилеры / излишки на заводе
  • Гарантия качества на 1 год 》
  • Нажмите, чтобы узнать цены
Part Number
2SD2014
Category
Transistors - Bipolar (BJT) - Single
Manufacturer
Sanken
Description
TRANS NPN DARL 80V 4A TO220F
Package
Cut Tape (CT)
Series
-
Operating Temperature
150°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-220-3 Full Pack
Supplier Device Package
TO-220F
Power - Max
25 W
Transistor Type
NPN - Darlington
Current - Collector (Ic) (Max)
4 A
Voltage - Collector Emitter Breakdown (Max)
80 V
Vce Saturation (Max) @ Ib, Ic
1.5V @ 3mA, 3A
Current - Collector Cutoff (Max)
10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
2000 @ 3A, 2V
Frequency - Transition
75MHz
Package_case
TO-220-3 Full Pack

2SD2014 Гарантии

jinfftry-guarantee1,https://www.jinftry.ru/product_detail/2SD2014

jinfftry-guarantee2,https://www.jinftry.ru/product_detail/2SD2014

jinfftry-guarantee3,https://www.jinftry.ru/product_detail/2SD2014

• Ответьте оперативно

• Гарантированное качество

• Глобальный доступ

• Конкурентоспособная рыночная цена

• Универсальные услуги цепочки поставок

Jinftry, это ваш самый надежный поставщик компонентов, добро пожаловать, чтобы отправить нам запрос, спасибо!

У вас есть вопросы о 2SD2014 ?
Не стесняйтесь связаться с нами:

+86-755-82518276
+8615019224070, annies65, +8615118125813
568248857, 827259012, 316249462
+8615019224070, +8615118118839, +8615118125813
( Электронная почта в первую очередь )

Комментарии

Оставьте свой комментарий

Sanken

2SB1351,https://www.jinftry.ru/product_detail/2SD2014
2SB1351

TRANS PNP DARL 60V 12A TO220F

SLA5086,https://www.jinftry.ru/product_detail/2SD2014
SLA5086

TRANS PNP DARL 60V 12A TO220F

SLA5073,https://www.jinftry.ru/product_detail/2SD2014
SLA5073

TRANS PNP DARL 60V 12A TO220F

SLA5085,https://www.jinftry.ru/product_detail/2SD2014
SLA5085

TRANS PNP DARL 60V 12A TO220F

SLA5074,https://www.jinftry.ru/product_detail/2SD2014
SLA5074

TRANS PNP DARL 60V 12A TO220F

SLA5068-LF830,https://www.jinftry.ru/product_detail/2SD2014
SLA5068-LF830

TRANS PNP DARL 60V 12A TO220F

SLA5065,https://www.jinftry.ru/product_detail/2SD2014
SLA5065

TRANS PNP DARL 60V 12A TO220F

SMA5117,https://www.jinftry.ru/product_detail/2SD2014
SMA5117

TRANS PNP DARL 60V 12A TO220F

What is a power module

What is a power module Features of the power module Power drive module role What are the power drive modules ,Provide you with power drive modules,A Power Module is a highly integrated electronic device that controls and converts electrical energy. It usually includes multiple power semiconductor devices (such as IGBTs, MOSFETs, diodes, etc.),

Introduction to Semiconductor Discrete Devices

Introduction to Semiconductor Discrete Devices Semiconductor discrete devices refer to semiconductor crystal diodes, semiconductor transistors, transistors, transistors and semiconductor special devices. Introduction to Semiconductor Discrete Devices Electronic products are divided into "conductors" and "insulators" according to their conductive properties. Semiconductors are between "conductors" and "insulators". Semiconductor components are furthe

What is a bipolar transistor and what is its operating mode

What is a bipolar transistor How bipolar transistors work Bipolar junction transistor four modes of operation Bipolar transistor development applications What is a bipolar transistor

SiC helps the application of power semiconductor devices to increase junction temperature, which will greatly change the design pattern of power systems.

SiC helps the application of power semiconductor devices to increase junction temperature, which will greatly change the design pattern of power systems. Since the birth of silicon power semiconductor devices, application demands have been driving the junction temperature to rise, which has now reached 150°C. With the emergence of third-generation wide-bandgap semiconductor devices (such as SiC) and their increasing maturity and full commercialization, their unique high-temperature resistance i
Индекс продукции
A
B
C
D
E
F
G
H
I
J
K
L
M
N
O
P
Q
R
S
T
U
V
W
X
Y
Z
0
1
2
3
4
5
6
7
8
9
Shopping Cart Tel: +86-755-82518276 Email: sales@jinftry.com Skype: +8615019224070, annies65, +8615118125813 QQ: 568248857, 827259012, 316249462 Mobile: +8615019224070, +8615118118839, +8615118125813 WeChat: Send Message
TOP