2SD1620-TD-E

ON Semiconductor 2SD1620-TD-E

Изображение только для справки, пожалуйста, обратитесь к спецификации продукта

  • 2SD1620-TD-E
  • ON Semiconductor
  • TRANS NPN 10V 3A PCP
  • Transistors - Bipolar (BJT) - Single
  • 2SD1620-TD-E Лист данных
  • TO-243AA
  • Cut Tape (CT)
  • Lead free / RoHS Compliant,https://www.jinftry.ru/product_detail/2SD1620-TD-ELead free / RoHS Compliant
  • 2584
  • Запасы спот / разрешенные дилеры / излишки на заводе
  • Гарантия качества на 1 год 》
  • Нажмите, чтобы узнать цены
Part Number
2SD1620-TD-E
Category
Transistors - Bipolar (BJT) - Single
Manufacturer
ON Semiconductor
Description
TRANS NPN 10V 3A PCP
Package
Cut Tape (CT)
Series
-
Operating Temperature
150°C (TJ)
Mounting Type
Surface Mount
Package / Case
TO-243AA
Supplier Device Package
PCP
Power - Max
500 mW
Transistor Type
NPN
Current - Collector (Ic) (Max)
3 A
Voltage - Collector Emitter Breakdown (Max)
10 V
Vce Saturation (Max) @ Ib, Ic
400mV @ 60mA, 3A
Current - Collector Cutoff (Max)
100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
140 @ 3A, 2V
Frequency - Transition
200MHz
Package_case
TO-243AA

2SD1620-TD-E Гарантии

jinfftry-guarantee1,https://www.jinftry.ru/product_detail/2SD1620-TD-E

jinfftry-guarantee2,https://www.jinftry.ru/product_detail/2SD1620-TD-E

jinfftry-guarantee3,https://www.jinftry.ru/product_detail/2SD1620-TD-E

• Ответьте оперативно

• Гарантированное качество

• Глобальный доступ

• Конкурентоспособная рыночная цена

• Универсальные услуги цепочки поставок

Jinftry, это ваш самый надежный поставщик компонентов, добро пожаловать, чтобы отправить нам запрос, спасибо!

У вас есть вопросы о 2SD1620-TD-E ?
Не стесняйтесь связаться с нами:

+86-755-82518276
+8615019224070, annies65, +8615118125813
568248857, 827259012, 316249462
+8615019224070, +8615118118839, +8615118125813
( Электронная почта в первую очередь )

Комментарии

Оставьте свой комментарий

ON Semiconductor
ON Semiconductor,https://www.jinftry.ru/product_detail/2SD1620-TD-E
NSM3005NZTAG,https://www.jinftry.ru/product_detail/2SD1620-TD-E
NSM3005NZTAG

TRANS PNP 30V 500MA 6UDFN

2SB1122S-TD-E,https://www.jinftry.ru/product_detail/2SD1620-TD-E
2SB1122S-TD-E

TRANS PNP 30V 500MA 6UDFN

NSS30100LT1G,https://www.jinftry.ru/product_detail/2SD1620-TD-E
NSS30100LT1G

TRANS PNP 30V 500MA 6UDFN

CPH3216-TL-E,https://www.jinftry.ru/product_detail/2SD1620-TD-E
CPH3216-TL-E

TRANS PNP 30V 500MA 6UDFN

MMJT350T1G,https://www.jinftry.ru/product_detail/2SD1620-TD-E
MMJT350T1G

TRANS PNP 30V 500MA 6UDFN

ECH8102-TL-H,https://www.jinftry.ru/product_detail/2SD1620-TD-E
ECH8102-TL-H

TRANS PNP 30V 500MA 6UDFN

2SC3647T-TD-E,https://www.jinftry.ru/product_detail/2SD1620-TD-E
2SC3647T-TD-E

TRANS PNP 30V 500MA 6UDFN

2SA1417T-TD-E,https://www.jinftry.ru/product_detail/2SD1620-TD-E
2SA1417T-TD-E

TRANS PNP 30V 500MA 6UDFN

battery charger

Battery charger according to the design circuit operating frequency to divide, can be divided into power frequency machine and high frequency machine. The power frequency machine is designed based on the traditional analog circuit principle, the internal power devices (such as transformers, inductors, capacitors, etc.) are larger, and there is generally less noise when the load is larger, but the model has strong resistance performance in the harsh grid environmental conditions, and the reliabil

SiC helps the application of power semiconductor devices to increase junction temperature, which will greatly change the design pattern of power systems.

SiC helps the application of power semiconductor devices to increase junction temperature, which will greatly change the design pattern of power systems. Since the birth of silicon power semiconductor devices, application demands have been driving the junction temperature to rise, which has now reached 150°C. With the emergence of third-generation wide-bandgap semiconductor devices (such as SiC) and their increasing maturity and full commercialization, their unique high-temperature resistance i

An introduction to the IGBT module CM1000DU-34NF from Powerex Inc. and its technical applications

An introduction to the IGBT module CM1000DU-34NF from Powerex Inc. and its technical applications IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the advantages of MOSFET (Metal Oxide Semiconductor Field Effect Transistor) and BJT (Bipolar Transistor). It is widely used in the field of power electronics and used in switching power supplies. , motor drive, inverter and other applications. IGBT module CM1000DU-34NF The IGBT module is a highly efficient and comp

Classification of IGBT modules, difference between application characteristics and MOSFETs

Classification of IGBT modules, difference between application characteristics and MOSFETs Both MOSFETs (Metal Oxide Semiconductor Field Effect Transistors) and IGBTs (Insulated Gate Bipolar Transistors) are commonly used switching devices in power electronics. They each have their own characteristics and application scenarios, the following are their main differences:
Индекс продукции
A
B
C
D
E
F
G
H
I
J
K
L
M
N
O
P
Q
R
S
T
U
V
W
X
Y
Z
0
1
2
3
4
5
6
7
8
9
Shopping Cart Tel: +86-755-82518276 Email: sales@jinftry.com Skype: +8615019224070, annies65, +8615118125813 QQ: 568248857, 827259012, 316249462 Mobile: +8615019224070, +8615118118839, +8615118125813 WeChat: Send Message
TOP