2SC5086-Y,LF

Toshiba Semiconductor and Storage 2SC5086-Y,LF

Изображение только для справки, пожалуйста, обратитесь к спецификации продукта

  • 2SC5086-Y,LF
  • Toshiba Semiconductor and Storage
  • RF TRANS NPN 12V 7GHZ SSM
  • Transistors - Bipolar (BJT) - RF
  • 2SC5086-Y,LF Лист данных
  • SC-75, SOT-416
  • Tape & Reel (TR)
  • Lead free / RoHS Compliant,https://www.jinftry.ru/product_detail/2SC5086-Y-LFLead free / RoHS Compliant
  • 1865
  • Запасы спот / разрешенные дилеры / излишки на заводе
  • Гарантия качества на 1 год 》
  • Нажмите, чтобы узнать цены
Part Number
2SC5086-Y,LF
Category
Transistors - Bipolar (BJT) - RF
Manufacturer
Toshiba Semiconductor and Storage
Description
RF TRANS NPN 12V 7GHZ SSM
Package
Tape & Reel (TR)
Series
-
Operating Temperature
125°C (TJ)
Mounting Type
Surface Mount
Package / Case
SC-75, SOT-416
Supplier Device Package
SSM
Gain
-
Power - Max
100mW
Transistor Type
NPN
Current - Collector (Ic) (Max)
80mA
Voltage - Collector Emitter Breakdown (Max)
12V
DC Current Gain (hFE) (Min) @ Ic, Vce
120 @ 20mA, 10V
Frequency - Transition
7GHz
Noise Figure (dB Typ @ f)
1dB @ 500MHz
Package_case
SC-75, SOT-416

2SC5086-Y,LF Гарантии

jinfftry-guarantee1,https://www.jinftry.ru/product_detail/2SC5086-Y-LF

jinfftry-guarantee2,https://www.jinftry.ru/product_detail/2SC5086-Y-LF

jinfftry-guarantee3,https://www.jinftry.ru/product_detail/2SC5086-Y-LF

• Ответьте оперативно

• Гарантированное качество

• Глобальный доступ

• Конкурентоспособная рыночная цена

• Универсальные услуги цепочки поставок

Jinftry, это ваш самый надежный поставщик компонентов, добро пожаловать, чтобы отправить нам запрос, спасибо!

У вас есть вопросы о 2SC5086-Y,LF ?
Не стесняйтесь связаться с нами:

+86-755-82518276
+8615019224070, annies65, +8615118125813
568248857, 827259012, 316249462
+8615019224070, +8615118118839, +8615118125813
( Электронная почта в первую очередь )

Комментарии

Оставьте свой комментарий

Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage,https://www.jinftry.ru/product_detail/2SC5086-Y-LF
2SC5086-O,LF,https://www.jinftry.ru/product_detail/2SC5086-Y-LF
2SC5086-O,LF

RF TRANS NPN 12V 7GHZ SSM

HN3C10FUTE85LF,https://www.jinftry.ru/product_detail/2SC5086-Y-LF
HN3C10FUTE85LF

RF TRANS NPN 12V 7GHZ SSM

2SC5095-R(TE85L,F),https://www.jinftry.ru/product_detail/2SC5086-Y-LF
2SC5095-R(TE85L,F)

RF TRANS NPN 12V 7GHZ SSM

2SC4915-Y,LF,https://www.jinftry.ru/product_detail/2SC5086-Y-LF
2SC4915-Y,LF

RF TRANS NPN 12V 7GHZ SSM

2SC5084-O(TE85L,F),https://www.jinftry.ru/product_detail/2SC5086-Y-LF
2SC5084-O(TE85L,F)

RF TRANS NPN 12V 7GHZ SSM

RN2306,LF,https://www.jinftry.ru/product_detail/2SC5086-Y-LF
RN2306,LF

RF TRANS NPN 12V 7GHZ SSM

RN2404,LF,https://www.jinftry.ru/product_detail/2SC5086-Y-LF
RN2404,LF

RF TRANS NPN 12V 7GHZ SSM

RN1115MFV,L3F,https://www.jinftry.ru/product_detail/2SC5086-Y-LF
RN1115MFV,L3F

RF TRANS NPN 12V 7GHZ SSM

What is diode?

What are diodes and their characteristics in electronics? Diodes are fundamental components in modern electronics, playing crucial roles in various applications. These tiny yet powerful devices control the flow of electrical current, ensuring the proper functioning of countless electronic circuits. Understanding diodes and their importance is essential for anyone involved in electronics, from hobbyists to professionals.

An introduction to the IGBT module CM1000DU-34NF from Powerex Inc. and its technical applications

An introduction to the IGBT module CM1000DU-34NF from Powerex Inc. and its technical applications IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the advantages of MOSFET (Metal Oxide Semiconductor Field Effect Transistor) and BJT (Bipolar Transistor). It is widely used in the field of power electronics and used in switching power supplies. , motor drive, inverter and other applications. IGBT module CM1000DU-34NF The IGBT module is a highly efficient and comp

Classification of IGBT modules, difference between application characteristics and MOSFETs

Classification of IGBT modules, difference between application characteristics and MOSFETs Both MOSFETs (Metal Oxide Semiconductor Field Effect Transistors) and IGBTs (Insulated Gate Bipolar Transistors) are commonly used switching devices in power electronics. They each have their own characteristics and application scenarios, the following are their main differences:

Toshiba 3rd Generation Silicon Carbide MOSFET

Toshiba 3rd Generation Silicon Carbide MOSFET Toshiba's third generation SiC MOSFETs are designed for high power industrial applications such as 400V AC input AC-DC power supplies. Other applications include photovoltaic (PV) inverters and bidirectional DC-DC converters for uninterruptible power supplies (UPS). These MOSFETs help reduce power dissipation and increase power density. Thanks to SiC technology, these devices offer higher voltages, faster switching, and lower on-resistance. Toshiba'
Индекс продукции
A
B
C
D
E
F
G
H
I
J
K
L
M
N
O
P
Q
R
S
T
U
V
W
X
Y
Z
0
1
2
3
4
5
6
7
8
9
Shopping Cart Tel: +86-755-82518276 Email: sales@jinftry.com Skype: +8615019224070, annies65, +8615118125813 QQ: 568248857, 827259012, 316249462 Mobile: +8615019224070, +8615118118839, +8615118125813 WeChat: Send Message
TOP