2SC4731S-AY

ON Semiconductor 2SC4731S-AY

Изображение только для справки, пожалуйста, обратитесь к спецификации продукта

  • 2SC4731S-AY
  • ON Semiconductor
  • TRANS NPN 100V 4A FLP
  • Transistors - Bipolar (BJT) - Single
  • 2SC4731S-AY Лист данных
  • TO-220-3 No Tab
  • Tape & Box (TB)
  • Lead free / RoHS Compliant,https://www.jinftry.ru/product_detail/2SC4731S-AYLead free / RoHS Compliant
  • 7634
  • Запасы спот / разрешенные дилеры / излишки на заводе
  • Гарантия качества на 1 год 》
  • Нажмите, чтобы узнать цены
Part Number
2SC4731S-AY
Category
Transistors - Bipolar (BJT) - Single
Manufacturer
ON Semiconductor
Description
TRANS NPN 100V 4A FLP
Package
Tape & Box (TB)
Series
-
Operating Temperature
-
Mounting Type
Through Hole
Package / Case
TO-220-3 No Tab
Supplier Device Package
FLP
Power - Max
1.5 W
Transistor Type
NPN
Current - Collector (Ic) (Max)
4 A
Voltage - Collector Emitter Breakdown (Max)
100 V
Vce Saturation (Max) @ Ib, Ic
400mV @ 200mA, 2A
Current - Collector Cutoff (Max)
1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
140 @ 500mA, 5V
Frequency - Transition
180MHz
Package_case
TO-220-3 No Tab

2SC4731S-AY Гарантии

jinfftry-guarantee1,https://www.jinftry.ru/product_detail/2SC4731S-AY

jinfftry-guarantee2,https://www.jinftry.ru/product_detail/2SC4731S-AY

jinfftry-guarantee3,https://www.jinftry.ru/product_detail/2SC4731S-AY

• Ответьте оперативно

• Гарантированное качество

• Глобальный доступ

• Конкурентоспособная рыночная цена

• Универсальные услуги цепочки поставок

Jinftry, это ваш самый надежный поставщик компонентов, добро пожаловать, чтобы отправить нам запрос, спасибо!

У вас есть вопросы о 2SC4731S-AY ?
Не стесняйтесь связаться с нами:

+86-755-82518276
+8615019224070, annies65, +8615118125813
568248857, 827259012, 316249462
+8615019224070, +8615118118839, +8615118125813
( Электронная почта в первую очередь )

Комментарии

Оставьте свой комментарий

ON Semiconductor
ON Semiconductor,https://www.jinftry.ru/product_detail/2SC4731S-AY
2SB1143T,https://www.jinftry.ru/product_detail/2SC4731S-AY
2SB1143T

TRANS PNP 50V 4A TO126ML

2SB1143S,https://www.jinftry.ru/product_detail/2SC4731S-AY
2SB1143S

TRANS PNP 50V 4A TO126ML

2SA2112-AN,https://www.jinftry.ru/product_detail/2SC4731S-AY
2SA2112-AN

TRANS PNP 50V 4A TO126ML

2SA2099,https://www.jinftry.ru/product_detail/2SC4731S-AY
2SA2099

TRANS PNP 50V 4A TO126ML

2SA1707S-AN,https://www.jinftry.ru/product_detail/2SC4731S-AY
2SA1707S-AN

TRANS PNP 50V 4A TO126ML

MPSA92ZL1G,https://www.jinftry.ru/product_detail/2SC4731S-AY
MPSA92ZL1G

TRANS PNP 50V 4A TO126ML

MPSA18RLRMG,https://www.jinftry.ru/product_detail/2SC4731S-AY
MPSA18RLRMG

TRANS PNP 50V 4A TO126ML

MPSA05RLRMG,https://www.jinftry.ru/product_detail/2SC4731S-AY
MPSA05RLRMG

TRANS PNP 50V 4A TO126ML

battery charger

Battery charger according to the design circuit operating frequency to divide, can be divided into power frequency machine and high frequency machine. The power frequency machine is designed based on the traditional analog circuit principle, the internal power devices (such as transformers, inductors, capacitors, etc.) are larger, and there is generally less noise when the load is larger, but the model has strong resistance performance in the harsh grid environmental conditions, and the reliabil

Classification of IGBT modules, difference between application characteristics and MOSFETs

Classification of IGBT modules, difference between application characteristics and MOSFETs Both MOSFETs (Metal Oxide Semiconductor Field Effect Transistors) and IGBTs (Insulated Gate Bipolar Transistors) are commonly used switching devices in power electronics. They each have their own characteristics and application scenarios, the following are their main differences:

1N4148 diode, characteristics - can use 1n4148w, 1n4448 diode instead

1N4148 diode, characteristics - can use 1n4148w, 1n4448 diode instead The 1N4148 diode is a common fast-switching diode used in a variety of electronic devices. Picture 01 Basic parameters of 1N4148 diode: Maximum reverse voltage: 100V Maximum forward current: 200mA Peak Forward Current: 450mA Forward Voltage (at 1.0mA): 1V Reverse current (at 75V): 5nA Maximum working temperature: 150°C Maximum storage temperature: 175°C Switching time: 4ns 1N4148 diodes are common in applic

The development trend of IGBT (insulated gate bipolar transistor) manufacturers in recent years

PS22A78-E Description:DIPIPMs are intelligent power modules that integrate power devices, drivers, and protection circuitry. Design time is reduced by the use of application-specific HVICs and value-added features such as linear temperature feed-back. Overall efficiency and reliability are increase ed by the use of full gate CSTBT technology and low thermal impedance. Features:   Low-loss, Full Gate CSTBT IGBTs Single Power Supply   Integrated HVICs   Direct Connection to CPUApplications:
Индекс продукции
A
B
C
D
E
F
G
H
I
J
K
L
M
N
O
P
Q
R
S
T
U
V
W
X
Y
Z
0
1
2
3
4
5
6
7
8
9
Shopping Cart Tel: +86-755-82518276 Email: sales@jinftry.com Skype: +8615019224070, annies65, +8615118125813 QQ: 568248857, 827259012, 316249462 Mobile: +8615019224070, +8615118118839, +8615118125813 WeChat: Send Message
TOP