Rohm Semiconductor 2SC4620TV2P
- 2SC4620TV2P
- Rohm Semiconductor
- TRANS NPN 400V 0.1A ATV
- Transistors - Bipolar (BJT) - Single
- 2SC4620TV2P Лист данных
- 3-SIP
- Tape & Reel (TR)
- Lead free / RoHS Compliant
- 2242
- Запасы спот / разрешенные дилеры / излишки на заводе
- Гарантия качества на 1 год 》
- Нажмите, чтобы узнать цены
Part Number 2SC4620TV2P |
Category Transistors - Bipolar (BJT) - Single |
Manufacturer Rohm Semiconductor |
Description TRANS NPN 400V 0.1A ATV |
Package Tape & Reel (TR) |
Series - |
Operating Temperature 150°C (TJ) |
Mounting Type Through Hole |
Package / Case 3-SIP |
Supplier Device Package ATV |
Power - Max 1 W |
Transistor Type NPN |
Current - Collector (Ic) (Max) 100 mA |
Voltage - Collector Emitter Breakdown (Max) 400 V |
Vce Saturation (Max) @ Ib, Ic 500mV @ 1mA, 10mA |
Current - Collector Cutoff (Max) 10µA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce 82 @ 10mA, 10V |
Frequency - Transition 20MHz |
Package_case 3-SIP |
2SC4620TV2P Гарантии
• Ответьте оперативно
• Гарантированное качество
• Глобальный доступ
• Конкурентоспособная рыночная цена
• Универсальные услуги цепочки поставок
Jinftry, это ваш самый надежный поставщик компонентов, добро пожаловать, чтобы отправить нам запрос, спасибо!
У вас есть вопросы о 2SC4620TV2P ?
Не стесняйтесь связаться с нами:
+86-755-82518276
+8615019224070, annies65, +8615118125813
568248857, 827259012, 316249462
+8615019224070, +8615118118839, +8615118125813
( Электронная почта в первую очередь )
Комментарии
Rohm Semiconductor
2SC2412KT246R
TRANS NPN 50V 0.15A SOT-346 TR
MPSA06T93
TRANS NPN 50V 0.15A SOT-346 TR
BCX71JT116
TRANS NPN 50V 0.15A SOT-346 TR
BCW60DT116
TRANS NPN 50V 0.15A SOT-346 TR
2SC5103TLQ
TRANS NPN 50V 0.15A SOT-346 TR
2SD1918TLQ
TRANS NPN 50V 0.15A SOT-346 TR
2SB1182TLQ
TRANS NPN 50V 0.15A SOT-346 TR
2SD2033AT114E
TRANS NPN 50V 0.15A SOT-346 TR
Introduction to Semiconductor Discrete Devices
Introduction to Semiconductor Discrete Devices
Semiconductor discrete devices refer to semiconductor crystal diodes, semiconductor transistors, transistors, transistors and semiconductor special devices.
Introduction to Semiconductor Discrete Devices
Electronic products are divided into "conductors" and "insulators" according to their conductive properties. Semiconductors are between "conductors" and "insulators". Semiconductor components are furthe
SiC helps the application of power semiconductor devices to increase junction temperature, which will greatly change the design pattern of power systems.
SiC helps the application of power semiconductor devices to increase junction temperature, which will greatly change the design pattern of power systems.
Since the birth of silicon power semiconductor devices, application demands have been driving the junction temperature to rise, which has now reached 150°C. With the emergence of third-generation wide-bandgap semiconductor devices (such as SiC) and their increasing maturity and full commercialization, their unique high-temperature resistance i
Classification of IGBT modules, difference between application characteristics and MOSFETs
Classification of IGBT modules, difference between application characteristics and MOSFETs
Both MOSFETs (Metal Oxide Semiconductor Field Effect Transistors) and IGBTs (Insulated Gate Bipolar Transistors) are commonly used switching devices in power electronics. They each have their own characteristics and application scenarios, the following are their main differences:
1N4148 diode, characteristics - can use 1n4148w, 1n4448 diode instead
1N4148 diode, characteristics - can use 1n4148w, 1n4448 diode instead
The 1N4148 diode is a common fast-switching diode used in a variety of electronic devices.
Picture 01
Basic parameters of 1N4148 diode:
Maximum reverse voltage: 100V
Maximum forward current: 200mA
Peak Forward Current: 450mA
Forward Voltage (at 1.0mA): 1V
Reverse current (at 75V): 5nA
Maximum working temperature: 150°C
Maximum storage temperature: 175°C
Switching time: 4ns
1N4148 diodes are common in applic