ON Semiconductor 2SC4159E
Изображение только для справки, пожалуйста, обратитесь к спецификации продукта
- 2SC4159E
- ON Semiconductor
- NPN SILICON TRANSISTOR
- Transistors - Bipolar (BJT) - Single
- 2SC4159E Лист данных
- -
- Bulk
-
Lead free / RoHS Compliant - 1928
- Запасы спот / разрешенные дилеры / излишки на заводе
- Гарантия качества на 1 год 》
- Нажмите, чтобы узнать цены
Службы доставки:
Способы оплаты:
| Part Number 2SC4159E |
| Category Transistors - Bipolar (BJT) - Single |
| Manufacturer ON Semiconductor |
| Description NPN SILICON TRANSISTOR |
| Package Bulk |
| Series - |
| Operating Temperature - |
| Mounting Type - |
| Package / Case - |
| Supplier Device Package - |
| Power - Max - |
| Transistor Type - |
| Current - Collector (Ic) (Max) - |
| Voltage - Collector Emitter Breakdown (Max) - |
| Vce Saturation (Max) @ Ib, Ic - |
| Current - Collector Cutoff (Max) - |
| DC Current Gain (hFE) (Min) @ Ic, Vce - |
| Frequency - Transition - |
| Package_case - |
2SC4159E Гарантии
• Ответьте оперативно
• Гарантированное качество
• Глобальный доступ
• Конкурентоспособная рыночная цена
• Универсальные услуги цепочки поставок
Jinftry, это ваш самый надежный поставщик компонентов, добро пожаловать, чтобы отправить нам запрос, спасибо!
У вас есть вопросы о 2SC4159E ?
Не стесняйтесь связаться с нами:
+86-755-82518276
+8615019224070, annies65, +8615118125813
568248857, 827259012, 316249462
+8615019224070, +8615118118839, +8615118125813
( Электронная почта в первую очередь )
2SC4159E сопутствующие товары
Комментарии
ON Semiconductor
FP216-TL-E
BIP NPN+NPN 1A 100V
2SC5476
BIP NPN+NPN 1A 100V
2SB1226
BIP NPN+NPN 1A 100V
2SA1562-E
BIP NPN+NPN 1A 100V
FX510-N-TL-E
BIP NPN+NPN 1A 100V
FX509-N-TL-E
BIP NPN+NPN 1A 100V
2SD1816S-TL-HQ
BIP NPN+NPN 1A 100V
2SC5832-TL-E
BIP NPN+NPN 1A 100V
SiC helps the application of power semiconductor devices to increase junction temperature, which will greatly change the design pattern of power systems.
SiC helps the application of power semiconductor devices to increase junction temperature, which will greatly change the design pattern of power systems.
Since the birth of silicon power semiconductor devices, application demands have been driving the junction temperature to rise, which has now reached 150°C. With the emergence of third-generation wide-bandgap semiconductor devices (such as SiC) and their increasing maturity and full commercialization, their unique high-temperature resistance i
An introduction to the IGBT module CM1000DU-34NF from Powerex Inc. and its technical applications
An introduction to the IGBT module CM1000DU-34NF from Powerex Inc. and its technical applications
IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the advantages of MOSFET (Metal Oxide Semiconductor Field Effect Transistor) and BJT (Bipolar Transistor). It is widely used in the field of power electronics and used in switching power supplies. , motor drive, inverter and other applications.
IGBT module CM1000DU-34NF The IGBT module is a highly efficient and comp
Model BC547/2N2222/2N4401 can replace 2N3904 transistor
Model BC547/2N2222/2N4401 can replace 2N3904 transistor
2N3904 is a commonly used NPN bipolar transistor
(2N3904 transistor), which is widely used in electronics due to its wide range of properties. The following are the specific model specifications of each manufacturer of the 2N3904 series: 2N3904, 2N3904 PBFREE, 2N3904,116, 2N3904,412, 2N3904-AP, 2N3904-BP,, 2N3904BU, 2N3904CBU, 2N3904G, 2N3904NLBU, 2N3904RL 1.. etc.
NCD57085 and NCV57085 onsemi
NCD57085 and NCV57085 onsemi
ON Semiconductor NCD57085/NCV57085 isolated IGBT gate driver provides 2.5kVrms internal current isolation and current detection protection, with soft shutdown and fault reporting functions. NCD57085/NCV57085 are designed to achieve high system efficiency and reliability in high-power applications. These devices have a wide input bias voltage range and signal level of 3.3V-20.0V, and a wide output bias voltage range of up to 30V. The safety features of NCD57085/NCV57
