ON Semiconductor 2SC4134S-TL-E
- 2SC4134S-TL-E
- ON Semiconductor
- TRANS NPN 100V 1A TPFA
- Transistors - Bipolar (BJT) - Single
- 2SC4134S-TL-E Лист данных
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Cut Tape (CT)
- Lead free / RoHS Compliant
- 7018
- Запасы спот / разрешенные дилеры / излишки на заводе
- Гарантия качества на 1 год 》
- Нажмите, чтобы узнать цены
Part Number 2SC4134S-TL-E |
Category Transistors - Bipolar (BJT) - Single |
Manufacturer ON Semiconductor |
Description TRANS NPN 100V 1A TPFA |
Package Cut Tape (CT) |
Series - |
Operating Temperature 150°C (TJ) |
Mounting Type Surface Mount |
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package TP-FA |
Power - Max 800 mW |
Transistor Type NPN |
Current - Collector (Ic) (Max) 1 A |
Voltage - Collector Emitter Breakdown (Max) 100 V |
Vce Saturation (Max) @ Ib, Ic 400mV @ 40mA, 400mA |
Current - Collector Cutoff (Max) 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce 140 @ 100mA, 5V |
Frequency - Transition 120MHz |
Package_case TO-252-3, DPak (2 Leads + Tab), SC-63 |
2SC4134S-TL-E Гарантии
• Ответьте оперативно
• Гарантированное качество
• Глобальный доступ
• Конкурентоспособная рыночная цена
• Универсальные услуги цепочки поставок
Jinftry, это ваш самый надежный поставщик компонентов, добро пожаловать, чтобы отправить нам запрос, спасибо!
У вас есть вопросы о 2SC4134S-TL-E ?
Не стесняйтесь связаться с нами:
+86-755-82518276
+8615019224070, annies65, +8615118125813
568248857, 827259012, 316249462
+8615019224070, +8615118118839, +8615118125813
( Электронная почта в первую очередь )
Комментарии
ON Semiconductor
2SA1552S-E
TRANS PNP 160V 1.5A TP
2SD1803S-TL-E
TRANS PNP 160V 1.5A TP
2SD1815S-E
TRANS PNP 160V 1.5A TP
KSH117TF
TRANS PNP 160V 1.5A TP
2SC4135S-TL-E
TRANS PNP 160V 1.5A TP
2SD1816T-H
TRANS PNP 160V 1.5A TP
2SD1816S-TL-H
TRANS PNP 160V 1.5A TP
SNSS35200MR6T1G
TRANS PNP 160V 1.5A TP
ON Semiconductor launches seventh-generation IGBT smart power module with outstanding performance
ON Semiconductor launches seventh-generation IGBT smart power module with outstanding performance
ON Semiconductor, a leader in semiconductors for smart power and sensing technologies, recently launched the 1200V SPM31 Intelligent Power Module (IPM) using new seventh-generation insulated gate bipolar transistor (IGBT) technology. The SPM31 IPM excels in energy efficiency, size and power density compared to other leading solutions on the market, reducing overall system cost. These IPMs integrate
2SC5200 2SA1943 NPN transistor electronic power amplifier, data sheet, application characteristics
The 2SA1943 and 2SC5200 are complementary NPN and PNP power transistors commonly used in electronic power amplifier circuits. When used together, they are often used in high-power audio amplifiers to amplify audio signals.
Classification of IGBT modules, difference between application characteristics and MOSFETs
Classification of IGBT modules, difference between application characteristics and MOSFETs
Both MOSFETs (Metal Oxide Semiconductor Field Effect Transistors) and IGBTs (Insulated Gate Bipolar Transistors) are commonly used switching devices in power electronics. They each have their own characteristics and application scenarios, the following are their main differences:
onsemi NCID9210 two-way ceramic digital isolator-onsemi
onsemi NCID9210 two-way ceramic digital isolator-onsemi
ON Semiconductor NCID9210 bidirectional ceramic digital isolator is an electrically isolated full-duplex, bidirectional, high-speed dual-channel digital isolator in a 16-pin wide-body small-outline package.
NCID9210 supports isolated communication and transmits digital signals between systems without conducting ground loops and harmful voltages.
The NCID9210 bidirectional ceramic digital isolator adopts patented current off-chip capa