ON Semiconductor 2SC4027S-H
- 2SC4027S-H
- ON Semiconductor
- TRANS NPN 160V 1.5A TP
- Transistors - Bipolar (BJT) - Single
- 2SC4027S-H Лист данных
- TO-251-3 Short Leads, IPak, TO-251AA
- Jinftry-Reel®
- Lead free / RoHS Compliant
- 2271
- Запасы спот / разрешенные дилеры / излишки на заводе
- Гарантия качества на 1 год 》
- Нажмите, чтобы узнать цены
Part Number 2SC4027S-H |
Category Transistors - Bipolar (BJT) - Single |
Manufacturer ON Semiconductor |
Description TRANS NPN 160V 1.5A TP |
Package Jinftry-Reel® |
Series - |
Operating Temperature 150°C (TJ) |
Mounting Type Through Hole |
Package / Case TO-251-3 Short Leads, IPak, TO-251AA |
Supplier Device Package TP |
Power - Max 1 W |
Transistor Type NPN |
Current - Collector (Ic) (Max) 1.5 A |
Voltage - Collector Emitter Breakdown (Max) 160 V |
Vce Saturation (Max) @ Ib, Ic 450mV @ 50mA, 500mA |
Current - Collector Cutoff (Max) 1µA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce 140 @ 100mA, 5V |
Frequency - Transition 120MHz |
Package_case TO-251-3 Short Leads, IPak, TO-251AA |
2SC4027S-H Гарантии
• Ответьте оперативно
• Гарантированное качество
• Глобальный доступ
• Конкурентоспособная рыночная цена
• Универсальные услуги цепочки поставок
Jinftry, это ваш самый надежный поставщик компонентов, добро пожаловать, чтобы отправить нам запрос, спасибо!
У вас есть вопросы о 2SC4027S-H ?
Не стесняйтесь связаться с нами:
+86-755-82518276
+8615019224070, annies65, +8615118125813
568248857, 827259012, 316249462
+8615019224070, +8615118118839, +8615118125813
( Электронная почта в первую очередь )
Комментарии
ON Semiconductor
2SA1552S-H
TRANS PNP 160V 1.5A TP
NJVMJD50T4G
TRANS PNP 160V 1.5A TP
NJVMJD47T4G
TRANS PNP 160V 1.5A TP
2SD1805F-TL-E
TRANS PNP 160V 1.5A TP
2SA1593S-TL-E
TRANS PNP 160V 1.5A TP
2SA1552S-TL-H
TRANS PNP 160V 1.5A TP
NSV40300MZ4T1G
TRANS PNP 160V 1.5A TP
2SA2039-H
TRANS PNP 160V 1.5A TP
Introduction to Semiconductor Discrete Devices
Introduction to Semiconductor Discrete Devices
Semiconductor discrete devices refer to semiconductor crystal diodes, semiconductor transistors, transistors, transistors and semiconductor special devices.
Introduction to Semiconductor Discrete Devices
Electronic products are divided into "conductors" and "insulators" according to their conductive properties. Semiconductors are between "conductors" and "insulators". Semiconductor components are furthe
An introduction to the IGBT module CM1000DU-34NF from Powerex Inc. and its technical applications
An introduction to the IGBT module CM1000DU-34NF from Powerex Inc. and its technical applications
IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the advantages of MOSFET (Metal Oxide Semiconductor Field Effect Transistor) and BJT (Bipolar Transistor). It is widely used in the field of power electronics and used in switching power supplies. , motor drive, inverter and other applications.
IGBT module CM1000DU-34NF The IGBT module is a highly efficient and comp
Infineon Ximenkang IGBT FF400R12KT4HOSA1 module series
FF450R12KE4 with EDA/CAD model made by Infineon. FF450R12KE4 provides MODULE package, which is a part of Module, Trans IGBT Module N-CH 1200V 520A 2400000mW 7-Pin 62MM-1 Tray, IGBT Modules N-CH 1.2KV 520A.
The following are the IGBT module series models:
SKM100GAL128D, SKM145GAL128D, SKM200GAL128D, SKM300GAL128D, SKM400GAL128D, SKM145GAR128D
SKM400GAR128D, SKM300GA12V, SKM400GA12V, SKM600GA12V, SKM150GAL12V, SKM400GAL12V, SKM50GB12T4, SKM75GB12T4, SKM100GB12T4, SKM150GB12T4, SKM200GB12T4
onsemi NTMC083NP10M5L Power MOSFET
onsemi NTMC083NP10M5L Power MOSFET
The ON Semiconductor NTMC083NP10M5L MOSFET is designed with low gate charge (QG) and capacitance to minimize driver losses. The MOSFET features low drain-source on-resistance RDS to minimize conduction losses. The device features a standard size (5mm x 6mm) compact design without ESD protection. The NTMC083NP10M5L power MOSFET is ideal for power tools, battery powered vacuums, unmanned aerial vehicles (UAVs)/drones, material handling, motor drives and home aut