ON Semiconductor 2SC3952D
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- 2SC3952D
- ON Semiconductor
- POWER BIPOLAR TRANSISTOR NPN
- Transistors - Bipolar (BJT) - Single
- 2SC3952D Лист данных
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- Bulk
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Lead free / RoHS Compliant - 3994
- Запасы спот / разрешенные дилеры / излишки на заводе
- Гарантия качества на 1 год 》
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| Part Number 2SC3952D |
| Category Transistors - Bipolar (BJT) - Single |
| Manufacturer ON Semiconductor |
| Description POWER BIPOLAR TRANSISTOR NPN |
| Package Bulk |
| Series - |
| Operating Temperature - |
| Mounting Type - |
| Package / Case - |
| Supplier Device Package - |
| Power - Max - |
| Transistor Type - |
| Current - Collector (Ic) (Max) - |
| Voltage - Collector Emitter Breakdown (Max) - |
| Vce Saturation (Max) @ Ib, Ic - |
| Current - Collector Cutoff (Max) - |
| DC Current Gain (hFE) (Min) @ Ic, Vce - |
| Frequency - Transition - |
| Package_case - |
2SC3952D Гарантии
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Classifications of a transistor
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Amplification function principle
What are transistors used for?
Relevant data and statistics of transistors for reference
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IGBT - Insulated Gate Bipolar Transistor. An IGBT is a power semiconductor device used in high voltage and high current applications. They are mainly used as switches in power electronic circuits. It's worth noting in the name IGBT, which has an insulated gate like a FET and a bipolar transistor like a BJT. The main reason for this is that an IGBT is indeed a device that combines the advantages of both transistors
Classification of IGBT modules, difference between application characteristics and MOSFETs
Classification of IGBT modules, difference between application characteristics and MOSFETs
Both MOSFETs (Metal Oxide Semiconductor Field Effect Transistors) and IGBTs (Insulated Gate Bipolar Transistors) are commonly used switching devices in power electronics. They each have their own characteristics and application scenarios, the following are their main differences:
