ON Semiconductor 2SC3396-TB-E
- 2SC3396-TB-E
- ON Semiconductor
- NPN SILICON TRANSISTOR
- Transistors - Bipolar (BJT) - Single
- 2SC3396-TB-E Лист данных
- -
- Bulk
- Lead free / RoHS Compliant
- 2213
- Запасы спот / разрешенные дилеры / излишки на заводе
- Гарантия качества на 1 год 》
- Нажмите, чтобы узнать цены
Part Number 2SC3396-TB-E |
Category Transistors - Bipolar (BJT) - Single |
Manufacturer ON Semiconductor |
Description NPN SILICON TRANSISTOR |
Package Bulk |
Series - |
Operating Temperature - |
Mounting Type - |
Package / Case - |
Supplier Device Package - |
Power - Max - |
Transistor Type - |
Current - Collector (Ic) (Max) - |
Voltage - Collector Emitter Breakdown (Max) - |
Vce Saturation (Max) @ Ib, Ic - |
Current - Collector Cutoff (Max) - |
DC Current Gain (hFE) (Min) @ Ic, Vce - |
Frequency - Transition - |
Package_case - |
2SC3396-TB-E Гарантии
• Ответьте оперативно
• Гарантированное качество
• Глобальный доступ
• Конкурентоспособная рыночная цена
• Универсальные услуги цепочки поставок
Jinftry, это ваш самый надежный поставщик компонентов, добро пожаловать, чтобы отправить нам запрос, спасибо!
У вас есть вопросы о 2SC3396-TB-E ?
Не стесняйтесь связаться с нами:
+86-755-82518276
+8615019224070, annies65, +8615118125813
568248857, 827259012, 316249462
+8615019224070, +8615118118839, +8615118125813
( Электронная почта в первую очередь )
Комментарии
ON Semiconductor
2SC3859-TB-E
BIP NPN 0.1A 50V BIAS R
SBC846BPDW1T1
BIP NPN 0.1A 50V BIAS R
2SC2274E-AA
BIP NPN 0.1A 50V BIAS R
DTA144WXV3T1
BIP NPN 0.1A 50V BIAS R
2SC2960E-SPA-AC
BIP NPN 0.1A 50V BIAS R
2SC3661-U-TB-E
BIP NPN 0.1A 50V BIAS R
SPA13003-S-AC
BIP NPN 0.1A 50V BIAS R
MMBT2132T1
BIP NPN 0.1A 50V BIAS R
battery charger
Battery charger according to the design circuit operating frequency to divide, can be divided into power frequency machine and high frequency machine. The power frequency machine is designed based on the traditional analog circuit principle, the internal power devices (such as transformers, inductors, capacitors, etc.) are larger, and there is generally less noise when the load is larger, but the model has strong resistance performance in the harsh grid environmental conditions, and the reliabil
SiC helps the application of power semiconductor devices to increase junction temperature, which will greatly change the design pattern of power systems.
SiC helps the application of power semiconductor devices to increase junction temperature, which will greatly change the design pattern of power systems.
Since the birth of silicon power semiconductor devices, application demands have been driving the junction temperature to rise, which has now reached 150°C. With the emergence of third-generation wide-bandgap semiconductor devices (such as SiC) and their increasing maturity and full commercialization, their unique high-temperature resistance i
Ansomy released a new 10BASE-T1S controller to promote the development of industrial Ethernet
Ansomy released a new 10BASE-T1S controller to promote the development of industrial Ethernet
Source: Contributed by the manufacturer • Author: Ansomy • 2022-06-21 17:25 • 596 reads • 0 comments
The NCN26010 supports multipoint Ethernet, reducing the number of cabling by 70% and the installation cost by 80%
June 21, 2022 - Onsemi (NASDAQ: ON), which is ahead of intelligent power supply and intelligent perception technology, today announced the launch of a new 10BASE-T1S Ethernet controller, w
onsemi NCL31010 driver
onsemi NCL31010 driver
The ON Semiconductor NCL31010 driver integrates an 802.3bt PoE-PD (Power over Ethernet Powered Device) interface controller, a dual-channel buck converter, and a buck converter LED driver. The NCL31010 integrates all functions required for operation within a PoE system, such as surge phase detection, classification and current limiting. The NCL31010 contains a synchronous step-down DC-DC converter for the main 3.3V system power supply and auxiliary power supply. In additi