ON Semiconductor 2SC2314E
- 2SC2314E
- ON Semiconductor
- SMALL SIGNAL BIPOLAR TRANSTR NPN
- Transistors - Bipolar (BJT) - Single
- 2SC2314E Лист данных
- -
- Bulk
- Lead free / RoHS Compliant
- 4377
- Запасы спот / разрешенные дилеры / излишки на заводе
- Гарантия качества на 1 год 》
- Нажмите, чтобы узнать цены
Part Number 2SC2314E |
Category Transistors - Bipolar (BJT) - Single |
Manufacturer ON Semiconductor |
Description SMALL SIGNAL BIPOLAR TRANSTR NPN |
Package Bulk |
Series - |
Operating Temperature - |
Mounting Type - |
Package / Case - |
Supplier Device Package - |
Power - Max - |
Transistor Type - |
Current - Collector (Ic) (Max) - |
Voltage - Collector Emitter Breakdown (Max) - |
Vce Saturation (Max) @ Ib, Ic - |
Current - Collector Cutoff (Max) - |
DC Current Gain (hFE) (Min) @ Ic, Vce - |
Frequency - Transition - |
Package_case - |
2SC2314E Гарантии
• Ответьте оперативно
• Гарантированное качество
• Глобальный доступ
• Конкурентоспособная рыночная цена
• Универсальные услуги цепочки поставок
Jinftry, это ваш самый надежный поставщик компонентов, добро пожаловать, чтобы отправить нам запрос, спасибо!
У вас есть вопросы о 2SC2314E ?
Не стесняйтесь связаться с нами:
+86-755-82518276
+8615019224070, annies65, +8615118125813
568248857, 827259012, 316249462
+8615019224070, +8615118118839, +8615118125813
( Электронная почта в первую очередь )
Комментарии
ON Semiconductor
2SB1123S-TD-EX-ON
PNP EPITAXIAL PLANAR SILICON
2SA1208S-AE
PNP EPITAXIAL PLANAR SILICON
ECH8504-TL-H
PNP EPITAXIAL PLANAR SILICON
2SD1936U-AC
PNP EPITAXIAL PLANAR SILICON
2SC5347E-TD-E
PNP EPITAXIAL PLANAR SILICON
MCH3221-TL-E
PNP EPITAXIAL PLANAR SILICON
MCH3431-TL-E
PNP EPITAXIAL PLANAR SILICON
BCU81-AA
PNP EPITAXIAL PLANAR SILICON
An introduction to the IGBT module CM1000DU-34NF from Powerex Inc. and its technical applications
An introduction to the IGBT module CM1000DU-34NF from Powerex Inc. and its technical applications
IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the advantages of MOSFET (Metal Oxide Semiconductor Field Effect Transistor) and BJT (Bipolar Transistor). It is widely used in the field of power electronics and used in switching power supplies. , motor drive, inverter and other applications.
IGBT module CM1000DU-34NF The IGBT module is a highly efficient and comp
NPN Silicon Transistor S8050 - Datasheet, Application Specifications, Pinout and Equivalent Replacements
NPN Silicon Transistor S8050 - Datasheet, Application Specifications, Pinout and Equivalent Replacements
S8050 is an NPN bipolar transistor. So when the base pin is connected to ground, the collector and emitter will remain open (reverse biased) and when a signal is supplied to the base pin, the collector and emitter will be closed (forward biased). It is commonly used in amplification and switching applications and is the perfect transistor to perform small and versatile tasks in electronic
1n5819 Diode (Schottky Rectifier) Pinout, Alternatives, Specifications, Datasheet, Price and Applications
1N5819 Schottky Diode Description:
1N5819 is a commonly used Schottky diode. A Schottky diode is a diode with special properties, its main features are a small forward voltage drop (typically 0.2-0.3V) and a fast reverse recovery time.
NCD57085 and NCV57085 onsemi
NCD57085 and NCV57085 onsemi
ON Semiconductor NCD57085/NCV57085 isolated IGBT gate driver provides 2.5kVrms internal current isolation and current detection protection, with soft shutdown and fault reporting functions. NCD57085/NCV57085 are designed to achieve high system efficiency and reliability in high-power applications. These devices have a wide input bias voltage range and signal level of 3.3V-20.0V, and a wide output bias voltage range of up to 30V. The safety features of NCD57085/NCV57