Toshiba Semiconductor and Storage 2SA2154MFVGR,L3F
- 2SA2154MFVGR,L3F
- Toshiba Semiconductor and Storage
- PNP TRANSISTOR VCEO-50V IC-0.15A
- Transistors - Bipolar (BJT) - Single
- 2SA2154MFVGR,L3F Лист данных
- SOT-723
- Cut Tape (CT)
- Lead free / RoHS Compliant
- 1890
- Запасы спот / разрешенные дилеры / излишки на заводе
- Гарантия качества на 1 год 》
- Нажмите, чтобы узнать цены
Part Number 2SA2154MFVGR,L3F |
Category Transistors - Bipolar (BJT) - Single |
Manufacturer Toshiba Semiconductor and Storage |
Description PNP TRANSISTOR VCEO-50V IC-0.15A |
Package Cut Tape (CT) |
Series - |
Operating Temperature 150°C (TJ) |
Mounting Type Surface Mount |
Package / Case SOT-723 |
Supplier Device Package VESM |
Power - Max 150 mW |
Transistor Type PNP |
Current - Collector (Ic) (Max) 150 mA |
Voltage - Collector Emitter Breakdown (Max) 50 V |
Vce Saturation (Max) @ Ib, Ic 300mV @ 10mA, 100mA |
Current - Collector Cutoff (Max) 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 2mA, 6V |
Frequency - Transition 80MHz |
Package_case SOT-723 |
2SA2154MFVGR,L3F Гарантии
• Ответьте оперативно
• Гарантированное качество
• Глобальный доступ
• Конкурентоспособная рыночная цена
• Универсальные услуги цепочки поставок
Jinftry, это ваш самый надежный поставщик компонентов, добро пожаловать, чтобы отправить нам запрос, спасибо!
У вас есть вопросы о 2SA2154MFVGR,L3F ?
Не стесняйтесь связаться с нами:
+86-755-82518276
+8615019224070, annies65, +8615118125813
568248857, 827259012, 316249462
+8615019224070, +8615118118839, +8615118125813
( Электронная почта в первую очередь )
Комментарии
Toshiba Semiconductor and Storage
2SA1182-GR,LF
PNP TRANSISTOR VCEO-30V IC-0.5A
2SC6135,LF
PNP TRANSISTOR VCEO-30V IC-0.5A
2SC6100,LF
PNP TRANSISTOR VCEO-30V IC-0.5A
2SA2195,LF
PNP TRANSISTOR VCEO-30V IC-0.5A
2SA1362-GR,LF
PNP TRANSISTOR VCEO-30V IC-0.5A
2SA2215,LF
PNP TRANSISTOR VCEO-30V IC-0.5A
2SA2154MFV-Y,L3F
PNP TRANSISTOR VCEO-30V IC-0.5A
TTC4116FU,LF
PNP TRANSISTOR VCEO-30V IC-0.5A
The most complete introduction to IGBT modules in 2023
IGBTs are used in many applications, such as motor drives, industrial control, power transmission, renewable energy, and electric transportation, mainly because IGBTs provide a convenient and reliable power-switching solution for handling high-power and high-voltage applications.
What is a Junction Diode? What are the types of junction diodes?
What is a Junction Diode? A junction diode is a semiconductor device consisting of a structure composed of a P-type semiconductor and an N-type semiconductor. It is also known as a PN junction diode or simply a diode. Junction diodes are one of the most basic and common types of diodes.
Infineon Ximenkang IGBT FF400R12KT4HOSA1 module series
FF450R12KE4 with EDA/CAD model made by Infineon. FF450R12KE4 provides MODULE package, which is a part of Module, Trans IGBT Module N-CH 1200V 520A 2400000mW 7-Pin 62MM-1 Tray, IGBT Modules N-CH 1.2KV 520A.
The following are the IGBT module series models:
SKM100GAL128D, SKM145GAL128D, SKM200GAL128D, SKM300GAL128D, SKM400GAL128D, SKM145GAR128D
SKM400GAR128D, SKM300GA12V, SKM400GA12V, SKM600GA12V, SKM150GAL12V, SKM400GAL12V, SKM50GB12T4, SKM75GB12T4, SKM100GB12T4, SKM150GB12T4, SKM200GB12T4
Toshiba 3rd Generation Silicon Carbide MOSFET
Toshiba 3rd Generation Silicon Carbide MOSFET
Toshiba's third generation SiC MOSFETs are designed for high power industrial applications such as 400V AC input AC-DC power supplies. Other applications include photovoltaic (PV) inverters and bidirectional DC-DC converters for uninterruptible power supplies (UPS). These MOSFETs help reduce power dissipation and increase power density. Thanks to SiC technology, these devices offer higher voltages, faster switching, and lower on-resistance. Toshiba'