2SA2154CT-GR,L3F

Toshiba Semiconductor and Storage 2SA2154CT-GR,L3F

Изображение только для справки, пожалуйста, обратитесь к спецификации продукта

  • 2SA2154CT-GR,L3F
  • Toshiba Semiconductor and Storage
  • TRANS PNP 50V 0.1A
  • Transistors - Bipolar (BJT) - Single
  • 2SA2154CT-GR,L3F Лист данных
  • SC-101, SOT-883
  • Jinftry-Reel®
  • Lead free / RoHS Compliant,https://www.jinftry.ru/product_detail/2SA2154CT-GR-L3FLead free / RoHS Compliant
  • 25679
  • Запасы спот / разрешенные дилеры / излишки на заводе
  • Гарантия качества на 1 год 》
  • Нажмите, чтобы узнать цены
Part Number
2SA2154CT-GR,L3F
Category
Transistors - Bipolar (BJT) - Single
Manufacturer
Toshiba Semiconductor and Storage
Description
TRANS PNP 50V 0.1A
Package
Jinftry-Reel®
Series
-
Operating Temperature
150°C (TJ)
Mounting Type
Surface Mount
Package / Case
SC-101, SOT-883
Supplier Device Package
CST3
Power - Max
100 mW
Transistor Type
PNP
Current - Collector (Ic) (Max)
100 mA
Voltage - Collector Emitter Breakdown (Max)
50 V
Vce Saturation (Max) @ Ib, Ic
300mV @ 10mA, 100mA
Current - Collector Cutoff (Max)
100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
200 @ 2mA, 6V
Frequency - Transition
80MHz
Package_case
SC-101, SOT-883

2SA2154CT-GR,L3F Гарантии

jinfftry-guarantee1,https://www.jinftry.ru/product_detail/2SA2154CT-GR-L3F

jinfftry-guarantee2,https://www.jinftry.ru/product_detail/2SA2154CT-GR-L3F

jinfftry-guarantee3,https://www.jinftry.ru/product_detail/2SA2154CT-GR-L3F

• Ответьте оперативно

• Гарантированное качество

• Глобальный доступ

• Конкурентоспособная рыночная цена

• Универсальные услуги цепочки поставок

Jinftry, это ваш самый надежный поставщик компонентов, добро пожаловать, чтобы отправить нам запрос, спасибо!

У вас есть вопросы о 2SA2154CT-GR,L3F ?
Не стесняйтесь связаться с нами:

+86-755-82518276
+8615019224070, annies65, +8615118125813
568248857, 827259012, 316249462
+8615019224070, +8615118118839, +8615118125813
( Электронная почта в первую очередь )

Комментарии

Оставьте свой комментарий

Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage,https://www.jinftry.ru/product_detail/2SA2154CT-GR-L3F
2SC4944-GR(TE85L,F,https://www.jinftry.ru/product_detail/2SA2154CT-GR-L3F
2SC4944-GR(TE85L,F

TRANS NPN 50V 0.15A USV

2SA1162-O,LF,https://www.jinftry.ru/product_detail/2SA2154CT-GR-L3F
2SA1162-O,LF

TRANS NPN 50V 0.15A USV

2SB906-Y(TE16L1,NQ,https://www.jinftry.ru/product_detail/2SA2154CT-GR-L3F
2SB906-Y(TE16L1,NQ

TRANS NPN 50V 0.15A USV

2SC3324GRTE85LF,https://www.jinftry.ru/product_detail/2SA2154CT-GR-L3F
2SC3324GRTE85LF

TRANS NPN 50V 0.15A USV

2SC5232BTE85LF,https://www.jinftry.ru/product_detail/2SA2154CT-GR-L3F
2SC5232BTE85LF

TRANS NPN 50V 0.15A USV

TMBT3904,LM,https://www.jinftry.ru/product_detail/2SA2154CT-GR-L3F
TMBT3904,LM

TRANS NPN 50V 0.15A USV

2SA1162-Y,LF,https://www.jinftry.ru/product_detail/2SA2154CT-GR-L3F
2SA1162-Y,LF

TRANS NPN 50V 0.15A USV

2SA1162-GR,LF,https://www.jinftry.ru/product_detail/2SA2154CT-GR-L3F
2SA1162-GR,LF

TRANS NPN 50V 0.15A USV

SiC helps the application of power semiconductor devices to increase junction temperature, which will greatly change the design pattern of power systems.

SiC helps the application of power semiconductor devices to increase junction temperature, which will greatly change the design pattern of power systems. Since the birth of silicon power semiconductor devices, application demands have been driving the junction temperature to rise, which has now reached 150°C. With the emergence of third-generation wide-bandgap semiconductor devices (such as SiC) and their increasing maturity and full commercialization, their unique high-temperature resistance i

Classification of IGBT modules, difference between application characteristics and MOSFETs

Classification of IGBT modules, difference between application characteristics and MOSFETs Both MOSFETs (Metal Oxide Semiconductor Field Effect Transistors) and IGBTs (Insulated Gate Bipolar Transistors) are commonly used switching devices in power electronics. They each have their own characteristics and application scenarios, the following are their main differences:

The development trend of IGBT (insulated gate bipolar transistor) manufacturers in recent years

PS22A78-E Description:DIPIPMs are intelligent power modules that integrate power devices, drivers, and protection circuitry. Design time is reduced by the use of application-specific HVICs and value-added features such as linear temperature feed-back. Overall efficiency and reliability are increase ed by the use of full gate CSTBT technology and low thermal impedance. Features:   Low-loss, Full Gate CSTBT IGBTs Single Power Supply   Integrated HVICs   Direct Connection to CPUApplications:

Toshiba 3rd Generation Silicon Carbide MOSFET

Toshiba 3rd Generation Silicon Carbide MOSFET Toshiba's third generation SiC MOSFETs are designed for high power industrial applications such as 400V AC input AC-DC power supplies. Other applications include photovoltaic (PV) inverters and bidirectional DC-DC converters for uninterruptible power supplies (UPS). These MOSFETs help reduce power dissipation and increase power density. Thanks to SiC technology, these devices offer higher voltages, faster switching, and lower on-resistance. Toshiba'
Индекс продукции
A
B
C
D
E
F
G
H
I
J
K
L
M
N
O
P
Q
R
S
T
U
V
W
X
Y
Z
0
1
2
3
4
5
6
7
8
9
Shopping Cart Tel: +86-755-82518276 Email: sales@jinftry.com Skype: +8615019224070, annies65, +8615118125813 QQ: 568248857, 827259012, 316249462 Mobile: +8615019224070, +8615118118839, +8615118125813 WeChat: Send Message
TOP