Sanyo 2SA1965-S-TL-E
- 2SA1965-S-TL-E
- Sanyo
- PNP EPITAXIAL PLANAR SILICON
- Transistors - Bipolar (BJT) - Single
- 2SA1965-S-TL-E Лист данных
- -
- Bulk
- Lead free / RoHS Compliant
- 27860
- Запасы спот / разрешенные дилеры / излишки на заводе
- Гарантия качества на 1 год 》
- Нажмите, чтобы узнать цены
Part Number 2SA1965-S-TL-E |
Category Transistors - Bipolar (BJT) - Single |
Manufacturer Sanyo |
Description PNP EPITAXIAL PLANAR SILICON |
Package Bulk |
Series - |
Operating Temperature - |
Mounting Type - |
Package / Case - |
Supplier Device Package - |
Power - Max - |
Transistor Type - |
Current - Collector (Ic) (Max) - |
Voltage - Collector Emitter Breakdown (Max) - |
Vce Saturation (Max) @ Ib, Ic - |
Current - Collector Cutoff (Max) - |
DC Current Gain (hFE) (Min) @ Ic, Vce - |
Frequency - Transition - |
Package_case - |
2SA1965-S-TL-E Гарантии
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Picture 01
Basic parameters of 1N4148 diode:
Maximum reverse voltage: 100V
Maximum forward current: 200mA
Peak Forward Current: 450mA
Forward Voltage (at 1.0mA): 1V
Reverse current (at 75V): 5nA
Maximum working temperature: 150°C
Maximum storage temperature: 175°C
Switching time: 4ns
1N4148 diodes are common in applic