ON Semiconductor 2SA1728-5-TB-E
Изображение только для справки, пожалуйста, обратитесь к спецификации продукта
- 2SA1728-5-TB-E
- ON Semiconductor
- BIP PNP 0.5A 40V
- Transistors - Bipolar (BJT) - Single
- 2SA1728-5-TB-E Лист данных
- -
- Bag
-
Lead free / RoHS Compliant - 2172
- Запасы спот / разрешенные дилеры / излишки на заводе
- Гарантия качества на 1 год 》
- Нажмите, чтобы узнать цены
Службы доставки:
Способы оплаты:
| Part Number 2SA1728-5-TB-E |
| Category Transistors - Bipolar (BJT) - Single |
| Manufacturer ON Semiconductor |
| Description BIP PNP 0.5A 40V |
| Package Bag |
| Series - |
| Operating Temperature - |
| Mounting Type - |
| Package / Case - |
| Supplier Device Package - |
| Power - Max - |
| Transistor Type - |
| Current - Collector (Ic) (Max) - |
| Voltage - Collector Emitter Breakdown (Max) - |
| Vce Saturation (Max) @ Ib, Ic - |
| Current - Collector Cutoff (Max) - |
| DC Current Gain (hFE) (Min) @ Ic, Vce - |
| Frequency - Transition - |
| Package_case - |
2SA1728-5-TB-E Гарантии
• Ответьте оперативно
• Гарантированное качество
• Глобальный доступ
• Конкурентоспособная рыночная цена
• Универсальные услуги цепочки поставок
Jinftry, это ваш самый надежный поставщик компонентов, добро пожаловать, чтобы отправить нам запрос, спасибо!
У вас есть вопросы о 2SA1728-5-TB-E ?
Не стесняйтесь связаться с нами:
+86-755-82518276
+8615019224070, annies65, +8615118125813
568248857, 827259012, 316249462
+8615019224070, +8615118118839, +8615118125813
( Электронная почта в первую очередь )
2SA1728-5-TB-E сопутствующие товары
Комментарии
ON Semiconductor
2SC5490-TL-E
BIP NPN 30MA 10V FT=8G
2SA1370D-AE
BIP NPN 30MA 10V FT=8G
2SC4414S-AC
BIP NPN 30MA 10V FT=8G
2SC3467E-AE
BIP NPN 30MA 10V FT=8G
2SC5226-5-TL-E
BIP NPN 30MA 10V FT=8G
2SB1126-TD-E
BIP NPN 30MA 10V FT=8G
2SB1229S-AA
BIP NPN 30MA 10V FT=8G
2SC3393S-AC
BIP NPN 30MA 10V FT=8G
Introduction to Semiconductor Discrete Devices
Introduction to Semiconductor Discrete Devices
Semiconductor discrete devices refer to semiconductor crystal diodes, semiconductor transistors, transistors, transistors and semiconductor special devices.
Introduction to Semiconductor Discrete Devices
Electronic products are divided into "conductors" and "insulators" according to their conductive properties. Semiconductors are between "conductors" and "insulators". Semiconductor components are furthe
SiC helps the application of power semiconductor devices to increase junction temperature, which will greatly change the design pattern of power systems.
SiC helps the application of power semiconductor devices to increase junction temperature, which will greatly change the design pattern of power systems.
Since the birth of silicon power semiconductor devices, application demands have been driving the junction temperature to rise, which has now reached 150°C. With the emergence of third-generation wide-bandgap semiconductor devices (such as SiC) and their increasing maturity and full commercialization, their unique high-temperature resistance i
What are IGBTs? How to improve the thermal performance design of IGBT on PCB
What are IGBTs? How to improve the thermal performance design of IGBT on PCB
IGBT - Insulated Gate Bipolar Transistor. An IGBT is a power semiconductor device used in high voltage and high current applications. They are mainly used as switches in power electronic circuits. It's worth noting in the name IGBT, which has an insulated gate like a FET and a bipolar transistor like a BJT. The main reason for this is that an IGBT is indeed a device that combines the advantages of both transistors
ON Ethernet Surge Protection Solutions
Ethernet Surge Protection Solutions
We're using Gigabit Ethernet, or at least 100M Fast Ethernet over hundreds of meters. Run miles of cables in the walls of our work buildings or their ceilings or other hidden spaces. We use Power over Ethernet (PoE) to power and communicate with devices on rooftops, kiosks, light poles, and even communication towers. When your boss tells you Ethernet to replace the IEEE-488 bus link in the factory, he probably doesn't understand the inherent robustness and
