Toshiba Semiconductor and Storage 2SA1680,T6SCMDF(J
- 2SA1680,T6SCMDF(J
- Toshiba Semiconductor and Storage
- TRANS PNP 2A 50V TO226-3
- Transistors - Bipolar (BJT) - Single
- 2SA1680,T6SCMDF(J Лист данных
- TO-226-3, TO-92-3 Long Body
- Bulk
- Lead free / RoHS Compliant
- 1115
- Запасы спот / разрешенные дилеры / излишки на заводе
- Гарантия качества на 1 год 》
- Нажмите, чтобы узнать цены
Part Number 2SA1680,T6SCMDF(J |
Category Transistors - Bipolar (BJT) - Single |
Manufacturer Toshiba Semiconductor and Storage |
Description TRANS PNP 2A 50V TO226-3 |
Package Bulk |
Series - |
Operating Temperature 150°C (TJ) |
Mounting Type Through Hole |
Package / Case TO-226-3, TO-92-3 Long Body |
Supplier Device Package TO-92MOD |
Power - Max 900 mW |
Transistor Type PNP |
Current - Collector (Ic) (Max) 2 A |
Voltage - Collector Emitter Breakdown (Max) 50 V |
Vce Saturation (Max) @ Ib, Ic 500mV @ 50mA, 1A |
Current - Collector Cutoff (Max) 1µA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 100mA, 2V |
Frequency - Transition 100MHz |
Package_case TO-226-3, TO-92-3 Long Body |
2SA1680,T6SCMDF(J Гарантии
• Ответьте оперативно
• Гарантированное качество
• Глобальный доступ
• Конкурентоспособная рыночная цена
• Универсальные услуги цепочки поставок
Jinftry, это ваш самый надежный поставщик компонентов, добро пожаловать, чтобы отправить нам запрос, спасибо!
У вас есть вопросы о 2SA1680,T6SCMDF(J ?
Не стесняйтесь связаться с нами:
+86-755-82518276
+8615019224070, annies65, +8615118125813
568248857, 827259012, 316249462
+8615019224070, +8615118118839, +8615118125813
( Электронная почта в первую очередь )
Комментарии
Toshiba Semiconductor and Storage
2SA1680,T6ASTIF(J
TRANS PNP 2A 50V TO226-3
2SA1680,F(J
TRANS PNP 2A 50V TO226-3
2SA1680(T6DNSO,F,M
TRANS PNP 2A 50V TO226-3
2SA1680(F,M)
TRANS PNP 2A 50V TO226-3
2SA1429-Y(T2TR,F,M
TRANS PNP 2A 50V TO226-3
2SA1429-Y(T2OMI,FM
TRANS PNP 2A 50V TO226-3
2SA1428-Y,T2F(M
TRANS PNP 2A 50V TO226-3
2SA1428-Y,T2F(J
TRANS PNP 2A 50V TO226-3
SiC helps the application of power semiconductor devices to increase junction temperature, which will greatly change the design pattern of power systems.
SiC helps the application of power semiconductor devices to increase junction temperature, which will greatly change the design pattern of power systems.
Since the birth of silicon power semiconductor devices, application demands have been driving the junction temperature to rise, which has now reached 150°C. With the emergence of third-generation wide-bandgap semiconductor devices (such as SiC) and their increasing maturity and full commercialization, their unique high-temperature resistance i
2SC5200 2SA1943 NPN transistor electronic power amplifier, data sheet, application characteristics
The 2SA1943 and 2SC5200 are complementary NPN and PNP power transistors commonly used in electronic power amplifier circuits. When used together, they are often used in high-power audio amplifiers to amplify audio signals.
Silicon Rectifier Diode 1N4004 VS 1N4002 Diode Pinout, Equivalents, Data Sheet, Specifications, Prices and Alternatives
Silicon Rectifier Diode 1N4004 VS 1N4002 Diode Pinout, Equivalents, Data Sheet, Specifications, Prices and Alternatives
1N4004 is a silicon rectifier diode, which has the following typical parameter specifications:
It is a member of the 1N400x series (1N4001-1N4007) rectifier diodes,
which are often used in various electronic devices for voltage rectification, such as power converters or power adapters.
1N4002 Diode Features/Technical Specifications (Partial Parameters):
The pin str
The characteristics of 1N4007 diode and 1N4001 diode, can 1N4007 be used instead of 1N4001?
The characteristics of 1N4007 diode and 1N4001 diode, can 1N4007 be used instead of 1N4001?
"1N4007" and "1N4001" are two types of diode information, which are two common rectifier diodes.
1N4007 and 1N4001 are part of a series of standard recovery time rectifier diodes, mainly used for AC (alternating current) to DC (direct current) conversion.