2PB710ARL,215

Nexperia USA Inc. 2PB710ARL,215

Изображение только для справки, пожалуйста, обратитесь к спецификации продукта

  • 2PB710ARL,215
  • Nexperia USA Inc.
  • TRANS PNP 50V 500MA TO236AB
  • Transistors - Bipolar (BJT) - Single
  • 2PB710ARL,215 Лист данных
  • TO-236-3, SC-59, SOT-23-3
  • Tape & Reel (TR)
  • Lead free / RoHS Compliant,https://www.jinftry.ru/product_detail/2PB710ARL-215Lead free / RoHS Compliant
  • 4805
  • Запасы спот / разрешенные дилеры / излишки на заводе
  • Гарантия качества на 1 год 》
  • Нажмите, чтобы узнать цены
Part Number
2PB710ARL,215
Category
Transistors - Bipolar (BJT) - Single
Manufacturer
Nexperia USA Inc.
Description
TRANS PNP 50V 500MA TO236AB
Package
Tape & Reel (TR)
Series
Automotive, AEC-Q101
Operating Temperature
150°C (TJ)
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Supplier Device Package
TO-236AB
Power - Max
250 mW
Transistor Type
PNP
Current - Collector (Ic) (Max)
500 mA
Voltage - Collector Emitter Breakdown (Max)
50 V
Vce Saturation (Max) @ Ib, Ic
600mV @ 30mA, 300mA
Current - Collector Cutoff (Max)
10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
120 @ 150mA, 10V
Frequency - Transition
120MHz
Package_case
TO-236-3, SC-59, SOT-23-3

2PB710ARL,215 Гарантии

jinfftry-guarantee1,https://www.jinftry.ru/product_detail/2PB710ARL-215

jinfftry-guarantee2,https://www.jinftry.ru/product_detail/2PB710ARL-215

jinfftry-guarantee3,https://www.jinftry.ru/product_detail/2PB710ARL-215

• Ответьте оперативно

• Гарантированное качество

• Глобальный доступ

• Конкурентоспособная рыночная цена

• Универсальные услуги цепочки поставок

Jinftry, это ваш самый надежный поставщик компонентов, добро пожаловать, чтобы отправить нам запрос, спасибо!

У вас есть вопросы о 2PB710ARL,215 ?
Не стесняйтесь связаться с нами:

+86-755-82518276
+8615019224070, annies65, +8615118125813
568248857, 827259012, 316249462
+8615019224070, +8615118118839, +8615118125813
( Электронная почта в первую очередь )

Комментарии

Оставьте свой комментарий

Nexperia USA Inc.

PMBT5551,235,https://www.jinftry.ru/product_detail/2PB710ARL-215
PMBT5551,235

TRANS NPN 160V 0.3A SOT23

PBSS3515MB,315,https://www.jinftry.ru/product_detail/2PB710ARL-215
PBSS3515MB,315

TRANS NPN 160V 0.3A SOT23

PBSS3540MB,315,https://www.jinftry.ru/product_detail/2PB710ARL-215
PBSS3540MB,315

TRANS NPN 160V 0.3A SOT23

BC857AQAZ,https://www.jinftry.ru/product_detail/2PB710ARL-215
BC857AQAZ

TRANS NPN 160V 0.3A SOT23

BC847CQAZ,https://www.jinftry.ru/product_detail/2PB710ARL-215
BC847CQAZ

TRANS NPN 160V 0.3A SOT23

BC857CQAZ,https://www.jinftry.ru/product_detail/2PB710ARL-215
BC857CQAZ

TRANS NPN 160V 0.3A SOT23

BC847AQAZ,https://www.jinftry.ru/product_detail/2PB710ARL-215
BC847AQAZ

TRANS NPN 160V 0.3A SOT23

2PC4081R,115,https://www.jinftry.ru/product_detail/2PB710ARL-215
2PC4081R,115

TRANS NPN 160V 0.3A SOT23

Introduction to Semiconductor Discrete Devices

Introduction to Semiconductor Discrete Devices Semiconductor discrete devices refer to semiconductor crystal diodes, semiconductor transistors, transistors, transistors and semiconductor special devices. Introduction to Semiconductor Discrete Devices Electronic products are divided into "conductors" and "insulators" according to their conductive properties. Semiconductors are between "conductors" and "insulators". Semiconductor components are furthe

BC547/BC548 transistor pin configuration, data sheet and application characteristics

BC547/BC548 transistor pin configuration, data sheet and application characteristics What is a BC547 transistor? BC547 is a common NPN bipolar transistor, so it is widely used in electronic circuits when the base pin is connected to ground, the collector and emitter will remain open circuit (reverse biased), while when the base pin is grounded When a signal is provided, the collector and emitter are turned off (forward biased).

Classification of IGBT modules, difference between application characteristics and MOSFETs

Classification of IGBT modules, difference between application characteristics and MOSFETs Both MOSFETs (Metal Oxide Semiconductor Field Effect Transistors) and IGBTs (Insulated Gate Bipolar Transistors) are commonly used switching devices in power electronics. They each have their own characteristics and application scenarios, the following are their main differences:

NEXPERIA uses Power-SO8 packaged P-channel MOSFET for the first time

NEXPERIA uses Power-SO8 packaged P-channel MOSFET for the first time Nexperia announced the first P-channel MOSFET series products encapsulated by LFPAK56 (Power-SO8). The new device complies with the AEC-Q101 standard and is suitable for automotive applications. It can be used as an ideal alternative product of DPAK MOSFET. On the basis of ensuring performance, the encapsulation area is reduced by more than 50%. The new series of products can be selected within the operating voltage range of 3
Индекс продукции
A
B
C
D
E
F
G
H
I
J
K
L
M
N
O
P
Q
R
S
T
U
V
W
X
Y
Z
0
1
2
3
4
5
6
7
8
9
Shopping Cart Tel: +86-755-82518276 Email: sales@jinftry.com Skype: +8615019224070, annies65, +8615118125813 QQ: 568248857, 827259012, 316249462 Mobile: +8615019224070, +8615118118839, +8615118125813 WeChat: Send Message
TOP