Microsemi Corporation 2N5013
- 2N5013
- Microsemi Corporation
- NPN SILICON TRANSISTOR
- Transistors - Bipolar (BJT) - Single
- 2N5013 Лист данных
- TO-205AA, TO-5-3 Metal Can
- Bulk
- Lead free / RoHS Compliant
- 24040
- Запасы спот / разрешенные дилеры / излишки на заводе
- Гарантия качества на 1 год 》
- Нажмите, чтобы узнать цены
Part Number 2N5013 |
Category Transistors - Bipolar (BJT) - Single |
Manufacturer Microsemi Corporation |
Description NPN SILICON TRANSISTOR |
Package Bulk |
Series - |
Operating Temperature -65°C ~ 200°C (TJ) |
Mounting Type Through Hole |
Package / Case TO-205AA, TO-5-3 Metal Can |
Supplier Device Package TO-5 |
Power - Max 1 W |
Transistor Type NPN |
Current - Collector (Ic) (Max) 200 mA |
Voltage - Collector Emitter Breakdown (Max) 800 V |
Vce Saturation (Max) @ Ib, Ic - |
Current - Collector Cutoff (Max) 10nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce 30 @ 20mA, 10V |
Frequency - Transition - |
Package_case TO-205AA, TO-5-3 Metal Can |
2N5013 Гарантии
• Ответьте оперативно
• Гарантированное качество
• Глобальный доступ
• Конкурентоспособная рыночная цена
• Универсальные услуги цепочки поставок
Jinftry, это ваш самый надежный поставщик компонентов, добро пожаловать, чтобы отправить нам запрос, спасибо!
У вас есть вопросы о 2N5013 ?
Не стесняйтесь связаться с нами:
+86-755-82518276
+8615019224070, annies65, +8615118125813
568248857, 827259012, 316249462
+8615019224070, +8615118118839, +8615118125813
( Электронная почта в первую очередь )
Комментарии
Microsemi Corporation
2N5015
NPN SILICON TRANSISTOR
JANTXV2N3251A
NPN SILICON TRANSISTOR
JAN2N5012
NPN SILICON TRANSISTOR
JAN2N5012S
NPN SILICON TRANSISTOR
JAN2N5013
NPN SILICON TRANSISTOR
JAN2N5013S
NPN SILICON TRANSISTOR
JAN2N5014
NPN SILICON TRANSISTOR
JAN2N5014S
NPN SILICON TRANSISTOR
SiC helps the application of power semiconductor devices to increase junction temperature, which will greatly change the design pattern of power systems.
SiC helps the application of power semiconductor devices to increase junction temperature, which will greatly change the design pattern of power systems.
Since the birth of silicon power semiconductor devices, application demands have been driving the junction temperature to rise, which has now reached 150°C. With the emergence of third-generation wide-bandgap semiconductor devices (such as SiC) and their increasing maturity and full commercialization, their unique high-temperature resistance i
What are IGBTs? How to improve the thermal performance design of IGBT on PCB
What are IGBTs? How to improve the thermal performance design of IGBT on PCB
IGBT - Insulated Gate Bipolar Transistor. An IGBT is a power semiconductor device used in high voltage and high current applications. They are mainly used as switches in power electronic circuits. It's worth noting in the name IGBT, which has an insulated gate like a FET and a bipolar transistor like a BJT. The main reason for this is that an IGBT is indeed a device that combines the advantages of both transistors
1N5408 Power/Rectifier Diode Introduction - Pinout, Price, Datasheet
1N5408 Power/Rectifier Diode Introduction - Pinout, Price, Datasheet
An introduction to the 1N5408 power/rectifier diode is discussed here. 1N5408 is a very common rectifier diode that is widely used in electronic equipment. This is a general purpose silicon diode, the 1N5408 low frequency power diode, used in various rectification and power conversion applications.
What is a Junction Diode? What are the types of junction diodes?
What is a Junction Diode? A junction diode is a semiconductor device consisting of a structure composed of a P-type semiconductor and an N-type semiconductor. It is also known as a PN junction diode or simply a diode. Junction diodes are one of the most basic and common types of diodes.