Solid State Inc. 2N4240
- 2N4240
- Solid State Inc.
- TO 66 1.0 & 2.0 AMP POWER TRANSI
- Transistors - Bipolar (BJT) - Single
- 2N4240 Лист данных
- TO-213AA, TO-66-2
- Box
- Lead free / RoHS Compliant
- 27136
- Запасы спот / разрешенные дилеры / излишки на заводе
- Гарантия качества на 1 год 》
- Нажмите, чтобы узнать цены
Part Number 2N4240 |
Category Transistors - Bipolar (BJT) - Single |
Manufacturer Solid State Inc. |
Description TO 66 1.0 & 2.0 AMP POWER TRANSI |
Package Box |
Series - |
Operating Temperature -65°C ~ 200°C (TJ) |
Mounting Type Through Hole |
Package / Case TO-213AA, TO-66-2 |
Supplier Device Package TO-66 |
Power - Max 35 W |
Transistor Type NPN |
Current - Collector (Ic) (Max) 2 A |
Voltage - Collector Emitter Breakdown (Max) 300 V |
Vce Saturation (Max) @ Ib, Ic 1V @ 75mA, 750mA |
Current - Collector Cutoff (Max) 5mA |
DC Current Gain (hFE) (Min) @ Ic, Vce 30 @ 750mA, 10V |
Frequency - Transition - |
Package_case TO-213AA, TO-66-2 |
2N4240 Гарантии
• Ответьте оперативно
• Гарантированное качество
• Глобальный доступ
• Конкурентоспособная рыночная цена
• Универсальные услуги цепочки поставок
Jinftry, это ваш самый надежный поставщик компонентов, добро пожаловать, чтобы отправить нам запрос, спасибо!
У вас есть вопросы о 2N4240 ?
Не стесняйтесь связаться с нами:
+86-755-82518276
+8615019224070, annies65, +8615118125813
568248857, 827259012, 316249462
+8615019224070, +8615118118839, +8615118125813
( Электронная почта в первую очередь )
Комментарии
Solid State Inc.
PMD12K100
SILICON NPN DARLINGTON TO3
PMD11K100
SILICON NPN DARLINGTON TO3
PMD10K100
SILICON NPN DARLINGTON TO3
PMD10K80
SILICON NPN DARLINGTON TO3
2N5239
SILICON NPN DARLINGTON TO3
2N5240
SILICON NPN DARLINGTON TO3
2N6049
SILICON NPN DARLINGTON TO3
MJ15003
SILICON NPN DARLINGTON TO3
NPN Silicon Transistor S8050 - Datasheet, Application Specifications, Pinout and Equivalent Replacements
NPN Silicon Transistor S8050 - Datasheet, Application Specifications, Pinout and Equivalent Replacements
S8050 is an NPN bipolar transistor. So when the base pin is connected to ground, the collector and emitter will remain open (reverse biased) and when a signal is supplied to the base pin, the collector and emitter will be closed (forward biased). It is commonly used in amplification and switching applications and is the perfect transistor to perform small and versatile tasks in electronic
Classification of IGBT modules, difference between application characteristics and MOSFETs
Classification of IGBT modules, difference between application characteristics and MOSFETs
Both MOSFETs (Metal Oxide Semiconductor Field Effect Transistors) and IGBTs (Insulated Gate Bipolar Transistors) are commonly used switching devices in power electronics. They each have their own characteristics and application scenarios, the following are their main differences:
The most complete introduction to IGBT modules in 2023
IGBTs are used in many applications, such as motor drives, industrial control, power transmission, renewable energy, and electric transportation, mainly because IGBTs provide a convenient and reliable power-switching solution for handling high-power and high-voltage applications.
1N5408 Power/Rectifier Diode Introduction - Pinout, Price, Datasheet
1N5408 Power/Rectifier Diode Introduction - Pinout, Price, Datasheet
An introduction to the 1N5408 power/rectifier diode is discussed here. 1N5408 is a very common rectifier diode that is widely used in electronic equipment. This is a general purpose silicon diode, the 1N5408 low frequency power diode, used in various rectification and power conversion applications.