2N4240

Solid State Inc. 2N4240

Изображение только для справки, пожалуйста, обратитесь к спецификации продукта

  • 2N4240
  • Solid State Inc.
  • TO 66 1.0 & 2.0 AMP POWER TRANSI
  • Transistors - Bipolar (BJT) - Single
  • 2N4240 Лист данных
  • TO-213AA, TO-66-2
  • Box
  • Lead free / RoHS Compliant,https://www.jinftry.ru/product_detail/2N4240-P4837356Lead free / RoHS Compliant
  • 27136
  • Запасы спот / разрешенные дилеры / излишки на заводе
  • Гарантия качества на 1 год 》
  • Нажмите, чтобы узнать цены
Part Number
2N4240
Category
Transistors - Bipolar (BJT) - Single
Manufacturer
Solid State Inc.
Description
TO 66 1.0 & 2.0 AMP POWER TRANSI
Package
Box
Series
-
Operating Temperature
-65°C ~ 200°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-213AA, TO-66-2
Supplier Device Package
TO-66
Power - Max
35 W
Transistor Type
NPN
Current - Collector (Ic) (Max)
2 A
Voltage - Collector Emitter Breakdown (Max)
300 V
Vce Saturation (Max) @ Ib, Ic
1V @ 75mA, 750mA
Current - Collector Cutoff (Max)
5mA
DC Current Gain (hFE) (Min) @ Ic, Vce
30 @ 750mA, 10V
Frequency - Transition
-
Package_case
TO-213AA, TO-66-2

2N4240 Гарантии

jinfftry-guarantee1,https://www.jinftry.ru/product_detail/2N4240-P4837356

jinfftry-guarantee2,https://www.jinftry.ru/product_detail/2N4240-P4837356

jinfftry-guarantee3,https://www.jinftry.ru/product_detail/2N4240-P4837356

• Ответьте оперативно

• Гарантированное качество

• Глобальный доступ

• Конкурентоспособная рыночная цена

• Универсальные услуги цепочки поставок

Jinftry, это ваш самый надежный поставщик компонентов, добро пожаловать, чтобы отправить нам запрос, спасибо!

У вас есть вопросы о 2N4240 ?
Не стесняйтесь связаться с нами:

+86-755-82518276
+8615019224070, annies65, +8615118125813
568248857, 827259012, 316249462
+8615019224070, +8615118118839, +8615118125813
( Электронная почта в первую очередь )

Комментарии

Оставьте свой комментарий

Solid State Inc.

PMD12K100,https://www.jinftry.ru/product_detail/2N4240-P4837356
PMD12K100

SILICON NPN DARLINGTON TO3

PMD11K100,https://www.jinftry.ru/product_detail/2N4240-P4837356
PMD11K100

SILICON NPN DARLINGTON TO3

PMD10K100,https://www.jinftry.ru/product_detail/2N4240-P4837356
PMD10K100

SILICON NPN DARLINGTON TO3

PMD10K80,https://www.jinftry.ru/product_detail/2N4240-P4837356
PMD10K80

SILICON NPN DARLINGTON TO3

2N5239,https://www.jinftry.ru/product_detail/2N4240-P4837356
2N5239

SILICON NPN DARLINGTON TO3

2N5240,https://www.jinftry.ru/product_detail/2N4240-P4837356
2N5240

SILICON NPN DARLINGTON TO3

2N6049,https://www.jinftry.ru/product_detail/2N4240-P4837356
2N6049

SILICON NPN DARLINGTON TO3

MJ15003,https://www.jinftry.ru/product_detail/2N4240-P4837356
MJ15003

SILICON NPN DARLINGTON TO3

NPN Silicon Transistor S8050 - Datasheet, Application Specifications, Pinout and Equivalent Replacements

NPN Silicon Transistor S8050 - Datasheet, Application Specifications, Pinout and Equivalent Replacements S8050 is an NPN bipolar transistor. So when the base pin is connected to ground, the collector and emitter will remain open (reverse biased) and when a signal is supplied to the base pin, the collector and emitter will be closed (forward biased). It is commonly used in amplification and switching applications and is the perfect transistor to perform small and versatile tasks in electronic

Classification of IGBT modules, difference between application characteristics and MOSFETs

Classification of IGBT modules, difference between application characteristics and MOSFETs Both MOSFETs (Metal Oxide Semiconductor Field Effect Transistors) and IGBTs (Insulated Gate Bipolar Transistors) are commonly used switching devices in power electronics. They each have their own characteristics and application scenarios, the following are their main differences:

The most complete introduction to IGBT modules in 2023

IGBTs are used in many applications, such as motor drives, industrial control, power transmission, renewable energy, and electric transportation, mainly because IGBTs provide a convenient and reliable power-switching solution for handling high-power and high-voltage applications.

1N5408 Power/Rectifier Diode Introduction - Pinout, Price, Datasheet

1N5408 Power/Rectifier Diode Introduction - Pinout, Price, Datasheet An introduction to the 1N5408 power/rectifier diode is discussed here. 1N5408 is a very common rectifier diode that is widely used in electronic equipment. This is a general purpose silicon diode, the 1N5408 low frequency power diode, used in various rectification and power conversion applications.
Индекс продукции
A
B
C
D
E
F
G
H
I
J
K
L
M
N
O
P
Q
R
S
T
U
V
W
X
Y
Z
0
1
2
3
4
5
6
7
8
9
Shopping Cart Tel: +86-755-82518276 Email: sales@jinftry.com Skype: +8615019224070, annies65, +8615118125813 QQ: 568248857, 827259012, 316249462 Mobile: +8615019224070, +8615118118839, +8615118125813 WeChat: Send Message
TOP