Vishay Semiconductor - Diodes Division 2KBP04M-M4/51
- 2KBP04M-M4/51
- Vishay Semiconductor - Diodes Division
- BRIDGE RECT 1PHASE 400V 2A KBPM
- Diodes - Bridge Rectifiers
- 2KBP04M-M4/51 Лист данных
- 4-SIP, KBPM
- Tray
- Lead free / RoHS Compliant
- 1777
- Запасы спот / разрешенные дилеры / излишки на заводе
- Гарантия качества на 1 год 》
- Нажмите, чтобы узнать цены
Part Number 2KBP04M-M4/51 |
Category Diodes - Bridge Rectifiers |
Manufacturer Vishay Semiconductor - Diodes Division |
Description BRIDGE RECT 1PHASE 400V 2A KBPM |
Package Tray |
Series - |
Operating Temperature -55°C ~ 165°C (TJ) |
Mounting Type Through Hole |
Package / Case 4-SIP, KBPM |
Supplier Device Package KBPM |
Technology Standard |
Diode Type Single Phase |
Voltage - Peak Reverse (Max) 400 V |
Current - Average Rectified (Io) 2 A |
Voltage - Forward (Vf) (Max) @ If 1.1 V @ 3.14 A |
Current - Reverse Leakage @ Vr 5 µA @ 400 V |
Package_case 4-SIP, KBPM |
2KBP04M-M4/51 Гарантии
• Ответьте оперативно
• Гарантированное качество
• Глобальный доступ
• Конкурентоспособная рыночная цена
• Универсальные услуги цепочки поставок
Jinftry, это ваш самый надежный поставщик компонентов, добро пожаловать, чтобы отправить нам запрос, спасибо!
У вас есть вопросы о 2KBP04M-M4/51 ?
Не стесняйтесь связаться с нами:
+86-755-82518276
+8615019224070, annies65, +8615118125813
568248857, 827259012, 316249462
+8615019224070, +8615118118839, +8615118125813
( Электронная почта в первую очередь )
Комментарии
Vishay Semiconductor - Diodes Division
2KBP01M-M4/51
BRIDGE RECT 1PHASE 100V 2A KBPM
2KBP005M-M4/51
BRIDGE RECT 1PHASE 100V 2A KBPM
3N259-E4/51
BRIDGE RECT 1PHASE 100V 2A KBPM
3N258-E4/51
BRIDGE RECT 1PHASE 100V 2A KBPM
3N256-E4/51
BRIDGE RECT 1PHASE 100V 2A KBPM
3N255-E4/51
BRIDGE RECT 1PHASE 100V 2A KBPM
3N253-E4/51
BRIDGE RECT 1PHASE 100V 2A KBPM
KBP10M-E4/51
BRIDGE RECT 1PHASE 100V 2A KBPM
Classification of IGBT modules, difference between application characteristics and MOSFETs
Classification of IGBT modules, difference between application characteristics and MOSFETs
Both MOSFETs (Metal Oxide Semiconductor Field Effect Transistors) and IGBTs (Insulated Gate Bipolar Transistors) are commonly used switching devices in power electronics. They each have their own characteristics and application scenarios, the following are their main differences:
What is a Junction Diode? What are the types of junction diodes?
What is a Junction Diode? A junction diode is a semiconductor device consisting of a structure composed of a P-type semiconductor and an N-type semiconductor. It is also known as a PN junction diode or simply a diode. Junction diodes are one of the most basic and common types of diodes.
The development trend of IGBT (insulated gate bipolar transistor) manufacturers in recent years
PS22A78-E
Description:DIPIPMs are intelligent power modules that integrate power devices, drivers, and protection circuitry. Design time is reduced by the use of application-specific HVICs and value-added features such as linear temperature feed-back. Overall efficiency and reliability are increase ed by the use of full gate CSTBT technology and low thermal impedance. Features:
Low-loss, Full Gate CSTBT IGBTs Single Power Supply
Integrated HVICs
Direct Connection to CPUApplications:
ON NTD2955G series packages and features are different
NTD2955 is a P-type MOSFET (Metal Oxide Semiconductor Field Effect Transistor) produced by ON Semiconductor. NTD2955 series models may have some changes, such as NTD2955PT4G, NTD2955T4G, NTD2955T4, NTD2955G, NTD2955-1G, etc. These models basically have the same parameters, but may differ in packaging or other characteristics.