Vishay Semiconductor - Diodes Division 20ETF12FP
- 20ETF12FP
- Vishay Semiconductor - Diodes Division
- DIODE GEN PURP 1.2KV 20A TO220FP
- Diodes - Rectifiers - Single
- 20ETF12FP Лист данных
- TO-220-2 Full Pack
- Tube
- Lead free / RoHS Compliant
- 3924
- Запасы спот / разрешенные дилеры / излишки на заводе
- Гарантия качества на 1 год 》
- Нажмите, чтобы узнать цены
Part Number 20ETF12FP |
Category Diodes - Rectifiers - Single |
Manufacturer Vishay Semiconductor - Diodes Division |
Description DIODE GEN PURP 1.2KV 20A TO220FP |
Package Tube |
Series - |
Mounting Type Through Hole |
Package / Case TO-220-2 Full Pack |
Supplier Device Package TO-220AC Full Pack |
Diode Type Standard |
Current - Average Rectified (Io) 20A |
Voltage - Forward (Vf) (Max) @ If 1.31 V @ 20 A |
Current - Reverse Leakage @ Vr 100 µA @ 1200 V |
Capacitance @ Vr, F - |
Voltage - DC Reverse (Vr) (Max) 1200 V |
Speed Fast Recovery =< 500ns, > 200mA (Io) |
Reverse Recovery Time (trr) 400 ns |
Operating Temperature - Junction -40°C ~ 150°C |
Package_case TO-220-2 Full Pack |
20ETF12FP Гарантии
• Ответьте оперативно
• Гарантированное качество
• Глобальный доступ
• Конкурентоспособная рыночная цена
• Универсальные услуги цепочки поставок
Jinftry, это ваш самый надежный поставщик компонентов, добро пожаловать, чтобы отправить нам запрос, спасибо!
У вас есть вопросы о 20ETF12FP ?
Не стесняйтесь связаться с нами:
+86-755-82518276
+8615019224070, annies65, +8615118125813
568248857, 827259012, 316249462
+8615019224070, +8615118118839, +8615118125813
( Электронная почта в первую очередь )
Комментарии
Vishay Semiconductor - Diodes Division
20ETF10STRL
DIODE GEN PURP 1KV 20A D2PAK
20ETF10FP
DIODE GEN PURP 1KV 20A D2PAK
20ETF08STRR
DIODE GEN PURP 1KV 20A D2PAK
20ETF08STRL
DIODE GEN PURP 1KV 20A D2PAK
20ETF06STRR
DIODE GEN PURP 1KV 20A D2PAK
20ETF06STRL
DIODE GEN PURP 1KV 20A D2PAK
20ETF04STRL
DIODE GEN PURP 1KV 20A D2PAK
20ETF02STRR
DIODE GEN PURP 1KV 20A D2PAK
SiC helps the application of power semiconductor devices to increase junction temperature, which will greatly change the design pattern of power systems.
SiC helps the application of power semiconductor devices to increase junction temperature, which will greatly change the design pattern of power systems.
Since the birth of silicon power semiconductor devices, application demands have been driving the junction temperature to rise, which has now reached 150°C. With the emergence of third-generation wide-bandgap semiconductor devices (such as SiC) and their increasing maturity and full commercialization, their unique high-temperature resistance i
An introduction to the IGBT module CM1000DU-34NF from Powerex Inc. and its technical applications
An introduction to the IGBT module CM1000DU-34NF from Powerex Inc. and its technical applications
IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the advantages of MOSFET (Metal Oxide Semiconductor Field Effect Transistor) and BJT (Bipolar Transistor). It is widely used in the field of power electronics and used in switching power supplies. , motor drive, inverter and other applications.
IGBT module CM1000DU-34NF The IGBT module is a highly efficient and comp
1n5819 Diode (Schottky Rectifier) Pinout, Alternatives, Specifications, Datasheet, Price and Applications
1N5819 Schottky Diode Description:
1N5819 is a commonly used Schottky diode. A Schottky diode is a diode with special properties, its main features are a small forward voltage drop (typically 0.2-0.3V) and a fast reverse recovery time.
The performance of Vishay's new 24 V XClampR transient voltage suppressor has reached the advanced level in the industry
The performance of Vishay's new 24 V XClampR transient voltage suppressor has reached the advanced level in the industry
Source: Contributed by the manufacturer • Author: Vishay • 2022-07-01 10:12 • 449 reads • 0 comments
The performance of Vishay's new 24 V XClampR transient voltage suppressor has reached the advanced level in the industry
High power consumption and high pulse current of bidirectional devices combined with high temperature stability are suitable for automotive, communica