Toshiba Semiconductor and Storage 1SV282TPH3F
- 1SV282TPH3F
- Toshiba Semiconductor and Storage
- DIODE VARACTOR 34V SINGLE ESC
- Diodes - Variable Capacitance (Varicaps, Varactors)
- 1SV282TPH3F Лист данных
- SC-79, SOD-523
- Jinftry-Reel®
- Lead free / RoHS Compliant
- 22435
- Запасы спот / разрешенные дилеры / излишки на заводе
- Гарантия качества на 1 год 》
- Нажмите, чтобы узнать цены
Part Number 1SV282TPH3F |
Category Diodes - Variable Capacitance (Varicaps, Varactors) |
Manufacturer Toshiba Semiconductor and Storage |
Description DIODE VARACTOR 34V SINGLE ESC |
Package Jinftry-Reel® |
Series - |
Operating Temperature 125°C (TJ) |
Mounting Type Surface Mount |
Package / Case SC-79, SOD-523 |
Supplier Device Package ESC |
Diode Type Single |
Voltage - Peak Reverse (Max) 34 V |
Capacitance @ Vr, F 3pF @ 25V, 1MHz |
Capacitance Ratio 12.5 |
Capacitance Ratio Condition C2/C25 |
Q @ Vr, F - |
Package_case SC-79, SOD-523 |
1SV282TPH3F Гарантии
• Ответьте оперативно
• Гарантированное качество
• Глобальный доступ
• Конкурентоспособная рыночная цена
• Универсальные услуги цепочки поставок
Jinftry, это ваш самый надежный поставщик компонентов, добро пожаловать, чтобы отправить нам запрос, спасибо!
У вас есть вопросы о 1SV282TPH3F ?
Не стесняйтесь связаться с нами:
+86-755-82518276
+8615019224070, annies65, +8615118125813
568248857, 827259012, 316249462
+8615019224070, +8615118118839, +8615118125813
( Электронная почта в первую очередь )
Комментарии
Toshiba Semiconductor and Storage
1SV310TPH3F
DIODE VARACTOR 10V USC
1SV304TPH3F
DIODE VARACTOR 10V USC
1SV323,H3F
DIODE VARACTOR 10V USC
1SV228TPH3F
DIODE VARACTOR 10V USC
1SV322(TPH3,F)
DIODE VARACTOR 10V USC
1SV229TPH3F
DIODE VARACTOR 10V USC
CRZ47(TE85L,Q)
DIODE VARACTOR 10V USC
CRZ33(TE85L,Q,M)
DIODE VARACTOR 10V USC
SiC helps the application of power semiconductor devices to increase junction temperature, which will greatly change the design pattern of power systems.
SiC helps the application of power semiconductor devices to increase junction temperature, which will greatly change the design pattern of power systems.
Since the birth of silicon power semiconductor devices, application demands have been driving the junction temperature to rise, which has now reached 150°C. With the emergence of third-generation wide-bandgap semiconductor devices (such as SiC) and their increasing maturity and full commercialization, their unique high-temperature resistance i
What are IGBTs? How to improve the thermal performance design of IGBT on PCB
What are IGBTs? How to improve the thermal performance design of IGBT on PCB
IGBT - Insulated Gate Bipolar Transistor. An IGBT is a power semiconductor device used in high voltage and high current applications. They are mainly used as switches in power electronic circuits. It's worth noting in the name IGBT, which has an insulated gate like a FET and a bipolar transistor like a BJT. The main reason for this is that an IGBT is indeed a device that combines the advantages of both transistors
The characteristics of 1N4007 diode and 1N4001 diode, can 1N4007 be used instead of 1N4001?
The characteristics of 1N4007 diode and 1N4001 diode, can 1N4007 be used instead of 1N4001?
"1N4007" and "1N4001" are two types of diode information, which are two common rectifier diodes.
1N4007 and 1N4001 are part of a series of standard recovery time rectifier diodes, mainly used for AC (alternating current) to DC (direct current) conversion.
Toshiba 3rd Generation Silicon Carbide MOSFET
Toshiba 3rd Generation Silicon Carbide MOSFET
Toshiba's third generation SiC MOSFETs are designed for high power industrial applications such as 400V AC input AC-DC power supplies. Other applications include photovoltaic (PV) inverters and bidirectional DC-DC converters for uninterruptible power supplies (UPS). These MOSFETs help reduce power dissipation and increase power density. Thanks to SiC technology, these devices offer higher voltages, faster switching, and lower on-resistance. Toshiba'