Toshiba Semiconductor and Storage 1SS397TE85LF
Изображение только для справки, пожалуйста, обратитесь к спецификации продукта
- 1SS397TE85LF
- Toshiba Semiconductor and Storage
- DIODE GEN PURP 400V 100MA SC70
- Diodes - Rectifiers - Single
- 1SS397TE85LF Лист данных
- SC-70, SOT-323
- Tape & Reel (TR)
-
Lead free / RoHS Compliant - 27962
- Запасы спот / разрешенные дилеры / излишки на заводе
- Гарантия качества на 1 год 》
- Нажмите, чтобы узнать цены
Службы доставки:
Способы оплаты:
| Part Number 1SS397TE85LF |
| Category Diodes - Rectifiers - Single |
| Manufacturer Toshiba Semiconductor and Storage |
| Description DIODE GEN PURP 400V 100MA SC70 |
| Package Tape & Reel (TR) |
| Series - |
| Mounting Type Surface Mount |
| Package / Case SC-70, SOT-323 |
| Supplier Device Package SC-70 |
| Diode Type Standard |
| Current - Average Rectified (Io) 100mA |
| Voltage - Forward (Vf) (Max) @ If 1.3 V @ 100 mA |
| Current - Reverse Leakage @ Vr 1 µA @ 400 V |
| Capacitance @ Vr, F 5pF @ 0V, 1MHz |
| Voltage - DC Reverse (Vr) (Max) 400 V |
| Speed Small Signal =< 200mA (Io), Any Speed |
| Reverse Recovery Time (trr) 500 ns |
| Operating Temperature - Junction 125°C (Max) |
| Package_case SC-70, SOT-323 |
1SS397TE85LF Гарантии
• Ответьте оперативно
• Гарантированное качество
• Глобальный доступ
• Конкурентоспособная рыночная цена
• Универсальные услуги цепочки поставок
Jinftry, это ваш самый надежный поставщик компонентов, добро пожаловать, чтобы отправить нам запрос, спасибо!
У вас есть вопросы о 1SS397TE85LF ?
Не стесняйтесь связаться с нами:
+86-755-82518276
+8615019224070, annies65, +8615118125813
568248857, 827259012, 316249462
+8615019224070, +8615118118839, +8615118125813
( Электронная почта в первую очередь )
1SS397TE85LF сопутствующие товары
Комментарии
Toshiba Semiconductor and Storage
DSF01S30SC(TPL3)
DIODE SCHOTTKY 30V 100MA SC2
CMS05(TE12L,Q,M)
DIODE SCHOTTKY 30V 100MA SC2
CMS04(TE12L,Q,M)
DIODE SCHOTTKY 30V 100MA SC2
CMS01(TE12L,Q,M)
DIODE SCHOTTKY 30V 100MA SC2
CRS08(TE85L,Q,M)
DIODE SCHOTTKY 30V 100MA SC2
CMH05A(TE12L,Q,M)
DIODE SCHOTTKY 30V 100MA SC2
CMH08A(TE12L,Q,M)
DIODE SCHOTTKY 30V 100MA SC2
TRS10E65C,S1Q
DIODE SCHOTTKY 30V 100MA SC2
2SC5200 2SA1943 NPN transistor electronic power amplifier, data sheet, application characteristics
The 2SA1943 and 2SC5200 are complementary NPN and PNP power transistors commonly used in electronic power amplifier circuits. When used together, they are often used in high-power audio amplifiers to amplify audio signals.
Classification of IGBT modules, difference between application characteristics and MOSFETs
Classification of IGBT modules, difference between application characteristics and MOSFETs
Both MOSFETs (Metal Oxide Semiconductor Field Effect Transistors) and IGBTs (Insulated Gate Bipolar Transistors) are commonly used switching devices in power electronics. They each have their own characteristics and application scenarios, the following are their main differences:
1N5408 Power/Rectifier Diode Introduction - Pinout, Price, Datasheet
1N5408 Power/Rectifier Diode Introduction - Pinout, Price, Datasheet
An introduction to the 1N5408 power/rectifier diode is discussed here. 1N5408 is a very common rectifier diode that is widely used in electronic equipment. This is a general purpose silicon diode, the 1N5408 low frequency power diode, used in various rectification and power conversion applications.
Toshiba 3rd Generation Silicon Carbide MOSFET
Toshiba 3rd Generation Silicon Carbide MOSFET
Toshiba's third generation SiC MOSFETs are designed for high power industrial applications such as 400V AC input AC-DC power supplies. Other applications include photovoltaic (PV) inverters and bidirectional DC-DC converters for uninterruptible power supplies (UPS). These MOSFETs help reduce power dissipation and increase power density. Thanks to SiC technology, these devices offer higher voltages, faster switching, and lower on-resistance. Toshiba'
