1SS315TPH3F

Toshiba Semiconductor and Storage 1SS315TPH3F

Изображение только для справки, пожалуйста, обратитесь к спецификации продукта

  • 1SS315TPH3F
  • Toshiba Semiconductor and Storage
  • RF DIODE SCHOTTKY 5V USC
  • Diodes - RF
  • 1SS315TPH3F Лист данных
  • SC-76, SOD-323
  • Jinftry-Reel®
  • Lead free / RoHS Compliant,https://www.jinftry.ru/product_detail/1SS315TPH3FLead free / RoHS Compliant
  • 1796
  • Запасы спот / разрешенные дилеры / излишки на заводе
  • Гарантия качества на 1 год 》
  • Нажмите, чтобы узнать цены
Part Number
1SS315TPH3F
Category
Diodes - RF
Manufacturer
Toshiba Semiconductor and Storage
Description
RF DIODE SCHOTTKY 5V USC
Package
Jinftry-Reel®
Series
-
Operating Temperature
125°C (TJ)
Package / Case
SC-76, SOD-323
Supplier Device Package
USC
Diode Type
Schottky - Single
Voltage - Peak Reverse (Max)
5V
Capacitance @ Vr, F
0.6pF @ 0.2V, 1MHz
Current - Max
30 mA
Power Dissipation (Max)
-
Resistance @ If, F
-
Package_case
SC-76, SOD-323

1SS315TPH3F Гарантии

jinfftry-guarantee1,https://www.jinftry.ru/product_detail/1SS315TPH3F

jinfftry-guarantee2,https://www.jinftry.ru/product_detail/1SS315TPH3F

jinfftry-guarantee3,https://www.jinftry.ru/product_detail/1SS315TPH3F

• Ответьте оперативно

• Гарантированное качество

• Глобальный доступ

• Конкурентоспособная рыночная цена

• Универсальные услуги цепочки поставок

Jinftry, это ваш самый надежный поставщик компонентов, добро пожаловать, чтобы отправить нам запрос, спасибо!

У вас есть вопросы о 1SS315TPH3F ?
Не стесняйтесь связаться с нами:

+86-755-82518276
+8615019224070, annies65, +8615118125813
568248857, 827259012, 316249462
+8615019224070, +8615118118839, +8615118125813
( Электронная почта в первую очередь )

Комментарии

Оставьте свой комментарий

Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage,https://www.jinftry.ru/product_detail/1SS315TPH3F
JDP4P02AT(TE85L),https://www.jinftry.ru/product_detail/1SS315TPH3F
JDP4P02AT(TE85L)

RF DIODE PIN 30V CST4

JDP2S08SC(TPL3),https://www.jinftry.ru/product_detail/1SS315TPH3F
JDP2S08SC(TPL3)

RF DIODE PIN 30V CST4

JDP2S02AFS(TPL3),https://www.jinftry.ru/product_detail/1SS315TPH3F
JDP2S02AFS(TPL3)

RF DIODE PIN 30V CST4

JDH2S01FSTPL3,https://www.jinftry.ru/product_detail/1SS315TPH3F
JDH2S01FSTPL3

RF DIODE PIN 30V CST4

JDH2S02FSTPL3,https://www.jinftry.ru/product_detail/1SS315TPH3F
JDH2S02FSTPL3

RF DIODE PIN 30V CST4

JDV2S07FSTPL3,https://www.jinftry.ru/product_detail/1SS315TPH3F
JDV2S07FSTPL3

RF DIODE PIN 30V CST4

1SS381,L3F,https://www.jinftry.ru/product_detail/1SS315TPH3F
1SS381,L3F

RF DIODE PIN 30V CST4

1SV307(TPH3,F),https://www.jinftry.ru/product_detail/1SS315TPH3F
1SV307(TPH3,F)

RF DIODE PIN 30V CST4

What is a power module

What is a power module Features of the power module Power drive module role What are the power drive modules ,Provide you with power drive modules,A Power Module is a highly integrated electronic device that controls and converts electrical energy. It usually includes multiple power semiconductor devices (such as IGBTs, MOSFETs, diodes, etc.),

Introduction to Semiconductor Discrete Devices

Introduction to Semiconductor Discrete Devices Semiconductor discrete devices refer to semiconductor crystal diodes, semiconductor transistors, transistors, transistors and semiconductor special devices. Introduction to Semiconductor Discrete Devices Electronic products are divided into "conductors" and "insulators" according to their conductive properties. Semiconductors are between "conductors" and "insulators". Semiconductor components are furthe

What is a bipolar transistor and what is its operating mode

What is a bipolar transistor How bipolar transistors work Bipolar junction transistor four modes of operation Bipolar transistor development applications What is a bipolar transistor

SiC helps the application of power semiconductor devices to increase junction temperature, which will greatly change the design pattern of power systems.

SiC helps the application of power semiconductor devices to increase junction temperature, which will greatly change the design pattern of power systems. Since the birth of silicon power semiconductor devices, application demands have been driving the junction temperature to rise, which has now reached 150°C. With the emergence of third-generation wide-bandgap semiconductor devices (such as SiC) and their increasing maturity and full commercialization, their unique high-temperature resistance i
Индекс продукции
A
B
C
D
E
F
G
H
I
J
K
L
M
N
O
P
Q
R
S
T
U
V
W
X
Y
Z
0
1
2
3
4
5
6
7
8
9
Shopping Cart Tel: +86-755-82518276 Email: sales@jinftry.com Skype: +8615019224070, annies65, +8615118125813 QQ: 568248857, 827259012, 316249462 Mobile: +8615019224070, +8615118118839, +8615118125813 WeChat: Send Message
TOP