Toshiba Semiconductor and Storage 1SS315[U/D]
- 1SS315[U/D]
- Toshiba Semiconductor and Storage
- RF DIODE SCHOTTKY 5V USC
- Diodes - RF
- 1SS315[U/D] Лист данных
- SC-76, SOD-323
- Tape & Reel (TR)
- Lead free / RoHS Compliant
- 15620
- Запасы спот / разрешенные дилеры / излишки на заводе
- Гарантия качества на 1 год 》
- Нажмите, чтобы узнать цены
Part Number 1SS315[U/D] |
Category Diodes - RF |
Manufacturer Toshiba Semiconductor and Storage |
Description RF DIODE SCHOTTKY 5V USC |
Package Tape & Reel (TR) |
Series - |
Operating Temperature 125°C (TJ) |
Package / Case SC-76, SOD-323 |
Supplier Device Package USC |
Diode Type Schottky - Single |
Voltage - Peak Reverse (Max) 5V |
Capacitance @ Vr, F 0.06pF @ 200mV, 1MHz |
Current - Max 30 mA |
Power Dissipation (Max) - |
Resistance @ If, F - |
Package_case SC-76, SOD-323 |
1SS315[U/D] Гарантии
• Ответьте оперативно
• Гарантированное качество
• Глобальный доступ
• Конкурентоспособная рыночная цена
• Универсальные услуги цепочки поставок
Jinftry, это ваш самый надежный поставщик компонентов, добро пожаловать, чтобы отправить нам запрос, спасибо!
У вас есть вопросы о 1SS315[U/D] ?
Не стесняйтесь связаться с нами:
+86-755-82518276
+8615019224070, annies65, +8615118125813
568248857, 827259012, 316249462
+8615019224070, +8615118118839, +8615118125813
( Электронная почта в первую очередь )
Комментарии
Toshiba Semiconductor and Storage
S1PA7[UD]
IGBT TRANS MODULE TO3PN
CUS357,H3F
IGBT TRANS MODULE TO3PN
1SS406,H3F
IGBT TRANS MODULE TO3PN
1SS321,LF
IGBT TRANS MODULE TO3PN
CUHS10F60,H3F
IGBT TRANS MODULE TO3PN
CUHS20F30,H3F
IGBT TRANS MODULE TO3PN
CUHS20F40,H3F
IGBT TRANS MODULE TO3PN
CUHS15S30,H3F
IGBT TRANS MODULE TO3PN
What is a power module
What is a power module Features of the power module Power drive module role What are the power drive modules ,Provide you with power drive modules,A Power Module is a highly integrated electronic device that controls and converts electrical energy. It usually includes multiple power semiconductor devices (such as IGBTs, MOSFETs, diodes, etc.),
Introduction to Semiconductor Discrete Devices
Introduction to Semiconductor Discrete Devices
Semiconductor discrete devices refer to semiconductor crystal diodes, semiconductor transistors, transistors, transistors and semiconductor special devices.
Introduction to Semiconductor Discrete Devices
Electronic products are divided into "conductors" and "insulators" according to their conductive properties. Semiconductors are between "conductors" and "insulators". Semiconductor components are furthe
What are IGBTs? How to improve the thermal performance design of IGBT on PCB
What are IGBTs? How to improve the thermal performance design of IGBT on PCB
IGBT - Insulated Gate Bipolar Transistor. An IGBT is a power semiconductor device used in high voltage and high current applications. They are mainly used as switches in power electronic circuits. It's worth noting in the name IGBT, which has an insulated gate like a FET and a bipolar transistor like a BJT. The main reason for this is that an IGBT is indeed a device that combines the advantages of both transistors
Infineon Ximenkang IGBT FF400R12KT4HOSA1 module series
FF450R12KE4 with EDA/CAD model made by Infineon. FF450R12KE4 provides MODULE package, which is a part of Module, Trans IGBT Module N-CH 1200V 520A 2400000mW 7-Pin 62MM-1 Tray, IGBT Modules N-CH 1.2KV 520A.
The following are the IGBT module series models:
SKM100GAL128D, SKM145GAL128D, SKM200GAL128D, SKM300GAL128D, SKM400GAL128D, SKM145GAR128D
SKM400GAR128D, SKM300GA12V, SKM400GA12V, SKM600GA12V, SKM150GAL12V, SKM400GAL12V, SKM50GB12T4, SKM75GB12T4, SKM100GB12T4, SKM150GB12T4, SKM200GB12T4