Renesas Electronics America Inc 1SS220-T1B-A
- 1SS220-T1B-A
- Renesas Electronics America Inc
- DIODE FOR HIGH SPEED SWITCHING
- Diodes - Rectifiers - Single
- 1SS220-T1B-A Лист данных
- -
- Bulk
- Lead free / RoHS Compliant
- 3309
- Запасы спот / разрешенные дилеры / излишки на заводе
- Гарантия качества на 1 год 》
- Нажмите, чтобы узнать цены
Part Number 1SS220-T1B-A |
Category Diodes - Rectifiers - Single |
Manufacturer Renesas Electronics America Inc |
Description DIODE FOR HIGH SPEED SWITCHING |
Package Bulk |
Series - |
Mounting Type - |
Package / Case - |
Supplier Device Package - |
Diode Type - |
Current - Average Rectified (Io) - |
Voltage - Forward (Vf) (Max) @ If - |
Current - Reverse Leakage @ Vr - |
Capacitance @ Vr, F - |
Voltage - DC Reverse (Vr) (Max) - |
Speed - |
Reverse Recovery Time (trr) - |
Operating Temperature - Junction - |
Package_case - |
1SS220-T1B-A Гарантии
• Ответьте оперативно
• Гарантированное качество
• Глобальный доступ
• Конкурентоспособная рыночная цена
• Универсальные услуги цепочки поставок
Jinftry, это ваш самый надежный поставщик компонентов, добро пожаловать, чтобы отправить нам запрос, спасибо!
У вас есть вопросы о 1SS220-T1B-A ?
Не стесняйтесь связаться с нами:
+86-755-82518276
+8615019224070, annies65, +8615118125813
568248857, 827259012, 316249462
+8615019224070, +8615118118839, +8615118125813
( Электронная почта в первую очередь )
Комментарии
Renesas Electronics America Inc
RKD700KL#R1
SCHOTTKY BARRIER DIODE
HRU0302A-JTRF-E
SCHOTTKY BARRIER DIODE
HSB83JTL-E
SCHOTTKY BARRIER DIODE
HSM2836C-JTL-E
SCHOTTKY BARRIER DIODE
HSM124S-JTL
SCHOTTKY BARRIER DIODE
HSM2836CTL-E
SCHOTTKY BARRIER DIODE
HSM2838C-JTR-E
SCHOTTKY BARRIER DIODE
HSK83TR-S-E
SCHOTTKY BARRIER DIODE
Datasheet and working principle of 1N4001 rectifier diode
Friends who are familiar with diodes should know that 1N4001 is a common rectifier diode used to convert alternating current into direct current. This type of diode has a wide range of applications in electronic equipment and circuits.
NPN Silicon Transistor S8050 - Datasheet, Application Specifications, Pinout and Equivalent Replacements
NPN Silicon Transistor S8050 - Datasheet, Application Specifications, Pinout and Equivalent Replacements
S8050 is an NPN bipolar transistor. So when the base pin is connected to ground, the collector and emitter will remain open (reverse biased) and when a signal is supplied to the base pin, the collector and emitter will be closed (forward biased). It is commonly used in amplification and switching applications and is the perfect transistor to perform small and versatile tasks in electronic
1N4148 diode, characteristics - can use 1n4148w, 1n4448 diode instead
1N4148 diode, characteristics - can use 1n4148w, 1n4448 diode instead
The 1N4148 diode is a common fast-switching diode used in a variety of electronic devices.
Picture 01
Basic parameters of 1N4148 diode:
Maximum reverse voltage: 100V
Maximum forward current: 200mA
Peak Forward Current: 450mA
Forward Voltage (at 1.0mA): 1V
Reverse current (at 75V): 5nA
Maximum working temperature: 150°C
Maximum storage temperature: 175°C
Switching time: 4ns
1N4148 diodes are common in applic
The development trend of IGBT (insulated gate bipolar transistor) manufacturers in recent years
PS22A78-E
Description:DIPIPMs are intelligent power modules that integrate power devices, drivers, and protection circuitry. Design time is reduced by the use of application-specific HVICs and value-added features such as linear temperature feed-back. Overall efficiency and reliability are increase ed by the use of full gate CSTBT technology and low thermal impedance. Features:
Low-loss, Full Gate CSTBT IGBTs Single Power Supply
Integrated HVICs
Direct Connection to CPUApplications: