Taiwan Semiconductor Corporation 1SMB5931 R5G
- 1SMB5931 R5G
- Taiwan Semiconductor Corporation
- DIODE ZENER 18V 3W DO214AA
- Diodes - Zener - Single
- 1SMB5931 R5G Лист данных
- DO-214AA, SMB
- Tape & Reel (TR)
- Lead free / RoHS Compliant
- 21974
- Запасы спот / разрешенные дилеры / излишки на заводе
- Гарантия качества на 1 год 》
- Нажмите, чтобы узнать цены
Part Number 1SMB5931 R5G |
Category Diodes - Zener - Single |
Manufacturer Taiwan Semiconductor Corporation |
Description DIODE ZENER 18V 3W DO214AA |
Package Tape & Reel (TR) |
Series - |
Operating Temperature -55°C ~ 150°C (TJ) |
Mounting Type Surface Mount |
Package / Case DO-214AA, SMB |
Supplier Device Package DO-214AA (SMB) |
Tolerance ±5% |
Power - Max 3 W |
Voltage - Forward (Vf) (Max) @ If - |
Current - Reverse Leakage @ Vr 1 µA @ 13.7 V |
Voltage - Zener (Nom) (Vz) 18 V |
Impedance (Max) (Zzt) 12 Ohms |
Package_case DO-214AA, SMB |
1SMB5931 R5G Гарантии
• Ответьте оперативно
• Гарантированное качество
• Глобальный доступ
• Конкурентоспособная рыночная цена
• Универсальные услуги цепочки поставок
Jinftry, это ваш самый надежный поставщик компонентов, добро пожаловать, чтобы отправить нам запрос, спасибо!
У вас есть вопросы о 1SMB5931 R5G ?
Не стесняйтесь связаться с нами:
+86-755-82518276
+8615019224070, annies65, +8615118125813
568248857, 827259012, 316249462
+8615019224070, +8615118118839, +8615118125813
( Электронная почта в первую очередь )
Комментарии
Taiwan Semiconductor Corporation
1SMB5929 R5G
DIODE ZENER 15V 3W DO214AA
1SMB5928 R5G
DIODE ZENER 15V 3W DO214AA
1SMB5927 R5G
DIODE ZENER 15V 3W DO214AA
1SMB5926 R5G
DIODE ZENER 15V 3W DO214AA
1SMB5956 R5G
DIODE ZENER 15V 3W DO214AA
1SMB5955 R5G
DIODE ZENER 15V 3W DO214AA
1SMB5954 R5G
DIODE ZENER 15V 3W DO214AA
1SMB5953 R5G
DIODE ZENER 15V 3W DO214AA
Classification of IGBT modules, difference between application characteristics and MOSFETs
Classification of IGBT modules, difference between application characteristics and MOSFETs
Both MOSFETs (Metal Oxide Semiconductor Field Effect Transistors) and IGBTs (Insulated Gate Bipolar Transistors) are commonly used switching devices in power electronics. They each have their own characteristics and application scenarios, the following are their main differences:
Silicon Rectifier Diode 1N4004 VS 1N4002 Diode Pinout, Equivalents, Data Sheet, Specifications, Prices and Alternatives
Silicon Rectifier Diode 1N4004 VS 1N4002 Diode Pinout, Equivalents, Data Sheet, Specifications, Prices and Alternatives
1N4004 is a silicon rectifier diode, which has the following typical parameter specifications:
It is a member of the 1N400x series (1N4001-1N4007) rectifier diodes,
which are often used in various electronic devices for voltage rectification, such as power converters or power adapters.
1N4002 Diode Features/Technical Specifications (Partial Parameters):
The pin str
The characteristics of 1N4007 diode and 1N4001 diode, can 1N4007 be used instead of 1N4001?
The characteristics of 1N4007 diode and 1N4001 diode, can 1N4007 be used instead of 1N4001?
"1N4007" and "1N4001" are two types of diode information, which are two common rectifier diodes.
1N4007 and 1N4001 are part of a series of standard recovery time rectifier diodes, mainly used for AC (alternating current) to DC (direct current) conversion.
1N4148 diode, characteristics - can use 1n4148w, 1n4448 diode instead
1N4148 diode, characteristics - can use 1n4148w, 1n4448 diode instead
The 1N4148 diode is a common fast-switching diode used in a variety of electronic devices.
Picture 01
Basic parameters of 1N4148 diode:
Maximum reverse voltage: 100V
Maximum forward current: 200mA
Peak Forward Current: 450mA
Forward Voltage (at 1.0mA): 1V
Reverse current (at 75V): 5nA
Maximum working temperature: 150°C
Maximum storage temperature: 175°C
Switching time: 4ns
1N4148 diodes are common in applic