Rectron USA 1SMA5954B
Изображение только для справки, пожалуйста, обратитесь к спецификации продукта
- 1SMA5954B
- Rectron USA
- DIODE ZENER 160V 1.5W SMA
- Diodes - Zener - Single
- 1SMA5954B Лист данных
- DO-214AC, SMA
- Tape & Reel (TR)
-
Lead free / RoHS Compliant - 4657
- Запасы спот / разрешенные дилеры / излишки на заводе
- Гарантия качества на 1 год 》
- Нажмите, чтобы узнать цены
Службы доставки:
Способы оплаты:
| Part Number 1SMA5954B |
| Category Diodes - Zener - Single |
| Manufacturer Rectron USA |
| Description DIODE ZENER 160V 1.5W SMA |
| Package Tape & Reel (TR) |
| Series - |
| Operating Temperature - |
| Mounting Type Surface Mount |
| Package / Case DO-214AC, SMA |
| Supplier Device Package DO-214AC, SMA |
| Tolerance ±5% |
| Power - Max 1.5 W |
| Voltage - Forward (Vf) (Max) @ If - |
| Current - Reverse Leakage @ Vr 1 µA @ 121.6 V |
| Voltage - Zener (Nom) (Vz) 160 V |
| Impedance (Max) (Zzt) 700 Ohms |
| Package_case DO-214AC, SMA |
1SMA5954B Гарантии
• Ответьте оперативно
• Гарантированное качество
• Глобальный доступ
• Конкурентоспособная рыночная цена
• Универсальные услуги цепочки поставок
Jinftry, это ваш самый надежный поставщик компонентов, добро пожаловать, чтобы отправить нам запрос, спасибо!
У вас есть вопросы о 1SMA5954B ?
Не стесняйтесь связаться с нами:
+86-755-82518276
+8615019224070, annies65, +8615118125813
568248857, 827259012, 316249462
+8615019224070, +8615118118839, +8615118125813
( Электронная почта в первую очередь )
1SMA5954B сопутствующие товары
Комментарии
Rectron USA
BZX85C200-T-M
DIODE ZENER 200V 1.3W DO-41
BZX84B3V6
DIODE ZENER 200V 1.3W DO-41
ZMM5236B
DIODE ZENER 200V 1.3W DO-41
BZX85C22-T-M
DIODE ZENER 200V 1.3W DO-41
1SMA5944B
DIODE ZENER 200V 1.3W DO-41
BZX884C30
DIODE ZENER 200V 1.3W DO-41
SMF4763AV
DIODE ZENER 200V 1.3W DO-41
BZX984B2V4
DIODE ZENER 200V 1.3W DO-41
An introduction to the IGBT module CM1000DU-34NF from Powerex Inc. and its technical applications
An introduction to the IGBT module CM1000DU-34NF from Powerex Inc. and its technical applications
IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the advantages of MOSFET (Metal Oxide Semiconductor Field Effect Transistor) and BJT (Bipolar Transistor). It is widely used in the field of power electronics and used in switching power supplies. , motor drive, inverter and other applications.
IGBT module CM1000DU-34NF The IGBT module is a highly efficient and comp
NPN Silicon Transistor S8050 - Datasheet, Application Specifications, Pinout and Equivalent Replacements
NPN Silicon Transistor S8050 - Datasheet, Application Specifications, Pinout and Equivalent Replacements
S8050 is an NPN bipolar transistor. So when the base pin is connected to ground, the collector and emitter will remain open (reverse biased) and when a signal is supplied to the base pin, the collector and emitter will be closed (forward biased). It is commonly used in amplification and switching applications and is the perfect transistor to perform small and versatile tasks in electronic
Classification of IGBT modules, difference between application characteristics and MOSFETs
Classification of IGBT modules, difference between application characteristics and MOSFETs
Both MOSFETs (Metal Oxide Semiconductor Field Effect Transistors) and IGBTs (Insulated Gate Bipolar Transistors) are commonly used switching devices in power electronics. They each have their own characteristics and application scenarios, the following are their main differences:
1N4148 diode, characteristics - can use 1n4148w, 1n4448 diode instead
1N4148 diode, characteristics - can use 1n4148w, 1n4448 diode instead
The 1N4148 diode is a common fast-switching diode used in a variety of electronic devices.
Picture 01
Basic parameters of 1N4148 diode:
Maximum reverse voltage: 100V
Maximum forward current: 200mA
Peak Forward Current: 450mA
Forward Voltage (at 1.0mA): 1V
Reverse current (at 75V): 5nA
Maximum working temperature: 150°C
Maximum storage temperature: 175°C
Switching time: 4ns
1N4148 diodes are common in applic
