Taiwan Semiconductor Corporation 1SMA5929HM2G
Изображение только для справки, пожалуйста, обратитесь к спецификации продукта
- 1SMA5929HM2G
- Taiwan Semiconductor Corporation
- DIODE ZENER 15V 1.5W DO214AC
- Diodes - Zener - Single
- 1SMA5929HM2G Лист данных
- DO-214AC, SMA
- Tape & Reel (TR)
-
Lead free / RoHS Compliant - 2421
- Запасы спот / разрешенные дилеры / излишки на заводе
- Гарантия качества на 1 год 》
- Нажмите, чтобы узнать цены
Службы доставки:
Способы оплаты:
| Part Number 1SMA5929HM2G |
| Category Diodes - Zener - Single |
| Manufacturer Taiwan Semiconductor Corporation |
| Description DIODE ZENER 15V 1.5W DO214AC |
| Package Tape & Reel (TR) |
| Series Automotive, AEC-Q101 |
| Operating Temperature -55°C ~ 150°C (TJ) |
| Mounting Type Surface Mount |
| Package / Case DO-214AC, SMA |
| Supplier Device Package DO-214AC (SMA) |
| Tolerance ±5% |
| Power - Max 1.5 W |
| Voltage - Forward (Vf) (Max) @ If - |
| Current - Reverse Leakage @ Vr 500 nA @ 11.4 V |
| Voltage - Zener (Nom) (Vz) 15 V |
| Impedance (Max) (Zzt) 9 Ohms |
| Package_case DO-214AC, SMA |
1SMA5929HM2G Гарантии
• Ответьте оперативно
• Гарантированное качество
• Глобальный доступ
• Конкурентоспособная рыночная цена
• Универсальные услуги цепочки поставок
Jinftry, это ваш самый надежный поставщик компонентов, добро пожаловать, чтобы отправить нам запрос, спасибо!
У вас есть вопросы о 1SMA5929HM2G ?
Не стесняйтесь связаться с нами:
+86-755-82518276
+8615019224070, annies65, +8615118125813
568248857, 827259012, 316249462
+8615019224070, +8615118118839, +8615118125813
( Электронная почта в первую очередь )
1SMA5929HM2G сопутствующие товары
Комментарии
Taiwan Semiconductor Corporation
1SMA5927HM2G
DIODE ZENER 12V 1.5W DO214AC
1SMA5926HM2G
DIODE ZENER 12V 1.5W DO214AC
1SMA4764HM2G
DIODE ZENER 12V 1.5W DO214AC
1SMA4763HM2G
DIODE ZENER 12V 1.5W DO214AC
1SMA4762HM2G
DIODE ZENER 12V 1.5W DO214AC
1SMA4761HM2G
DIODE ZENER 12V 1.5W DO214AC
1SMA4760HM2G
DIODE ZENER 12V 1.5W DO214AC
1SMA4759HM2G
DIODE ZENER 12V 1.5W DO214AC
What are IGBTs? How to improve the thermal performance design of IGBT on PCB
What are IGBTs? How to improve the thermal performance design of IGBT on PCB
IGBT - Insulated Gate Bipolar Transistor. An IGBT is a power semiconductor device used in high voltage and high current applications. They are mainly used as switches in power electronic circuits. It's worth noting in the name IGBT, which has an insulated gate like a FET and a bipolar transistor like a BJT. The main reason for this is that an IGBT is indeed a device that combines the advantages of both transistors
1N4148 diode, characteristics - can use 1n4148w, 1n4448 diode instead
1N4148 diode, characteristics - can use 1n4148w, 1n4448 diode instead
The 1N4148 diode is a common fast-switching diode used in a variety of electronic devices.
Picture 01
Basic parameters of 1N4148 diode:
Maximum reverse voltage: 100V
Maximum forward current: 200mA
Peak Forward Current: 450mA
Forward Voltage (at 1.0mA): 1V
Reverse current (at 75V): 5nA
Maximum working temperature: 150°C
Maximum storage temperature: 175°C
Switching time: 4ns
1N4148 diodes are common in applic
The latest 2N3055 transistor datasheet, application, and price analysis in 2023
2N3055 is a commonly used power transistor with a wide range of applications and reliable performance. Jinftry will introduce the detailed specifications of the 2N3055 transistor, including its datasheet, characteristics, and parameters. In addition, the application areas of the 2N3055 transistor will be discussed, and its price and market supply and demand will be discussed.
ON NTD2955G series packages and features are different
NTD2955 is a P-type MOSFET (Metal Oxide Semiconductor Field Effect Transistor) produced by ON Semiconductor. NTD2955 series models may have some changes, such as NTD2955PT4G, NTD2955T4G, NTD2955T4, NTD2955G, NTD2955-1G, etc. These models basically have the same parameters, but may differ in packaging or other characteristics.
