Taiwan Semiconductor Corporation 1SMA4755 R3G
- 1SMA4755 R3G
- Taiwan Semiconductor Corporation
- DIODE ZENER 43V 1.25W DO214AC
- Diodes - Zener - Single
- 1SMA4755 R3G Лист данных
- DO-214AC, SMA
- Jinftry-Reel®
- Lead free / RoHS Compliant
- 17730
- Запасы спот / разрешенные дилеры / излишки на заводе
- Гарантия качества на 1 год 》
- Нажмите, чтобы узнать цены
Part Number 1SMA4755 R3G |
Category Diodes - Zener - Single |
Manufacturer Taiwan Semiconductor Corporation |
Description DIODE ZENER 43V 1.25W DO214AC |
Package Jinftry-Reel® |
Series - |
Operating Temperature -55°C ~ 175°C (TJ) |
Mounting Type Surface Mount |
Package / Case DO-214AC, SMA |
Supplier Device Package DO-214AC (SMA) |
Tolerance ±5% |
Power - Max 1.25 W |
Voltage - Forward (Vf) (Max) @ If - |
Current - Reverse Leakage @ Vr 1 µA @ 32.7 V |
Voltage - Zener (Nom) (Vz) 43 V |
Impedance (Max) (Zzt) 70 Ohms |
Package_case DO-214AC, SMA |
1SMA4755 R3G Гарантии
• Ответьте оперативно
• Гарантированное качество
• Глобальный доступ
• Конкурентоспособная рыночная цена
• Универсальные услуги цепочки поставок
Jinftry, это ваш самый надежный поставщик компонентов, добро пожаловать, чтобы отправить нам запрос, спасибо!
У вас есть вопросы о 1SMA4755 R3G ?
Не стесняйтесь связаться с нами:
+86-755-82518276
+8615019224070, annies65, +8615118125813
568248857, 827259012, 316249462
+8615019224070, +8615118118839, +8615118125813
( Электронная почта в первую очередь )
Комментарии
Taiwan Semiconductor Corporation
1SMA4753 R3G
DIODE ZENER 36V 1.25W DO214AC
1SMA4752 R3G
DIODE ZENER 36V 1.25W DO214AC
1SMA4751 R3G
DIODE ZENER 36V 1.25W DO214AC
1SMA4750 R3G
DIODE ZENER 36V 1.25W DO214AC
1SMA4749 R3G
DIODE ZENER 36V 1.25W DO214AC
1SMA4747 R3G
DIODE ZENER 36V 1.25W DO214AC
1SMA4746 R3G
DIODE ZENER 36V 1.25W DO214AC
1SMA4744 R3G
DIODE ZENER 36V 1.25W DO214AC
SiC helps the application of power semiconductor devices to increase junction temperature, which will greatly change the design pattern of power systems.
SiC helps the application of power semiconductor devices to increase junction temperature, which will greatly change the design pattern of power systems.
Since the birth of silicon power semiconductor devices, application demands have been driving the junction temperature to rise, which has now reached 150°C. With the emergence of third-generation wide-bandgap semiconductor devices (such as SiC) and their increasing maturity and full commercialization, their unique high-temperature resistance i
1n5819 Diode (Schottky Rectifier) Pinout, Alternatives, Specifications, Datasheet, Price and Applications
1N5819 Schottky Diode Description:
1N5819 is a commonly used Schottky diode. A Schottky diode is a diode with special properties, its main features are a small forward voltage drop (typically 0.2-0.3V) and a fast reverse recovery time.
The development trend of IGBT (insulated gate bipolar transistor) manufacturers in recent years
PS22A78-E
Description:DIPIPMs are intelligent power modules that integrate power devices, drivers, and protection circuitry. Design time is reduced by the use of application-specific HVICs and value-added features such as linear temperature feed-back. Overall efficiency and reliability are increase ed by the use of full gate CSTBT technology and low thermal impedance. Features:
Low-loss, Full Gate CSTBT IGBTs Single Power Supply
Integrated HVICs
Direct Connection to CPUApplications:
Infineon Ximenkang IGBT FF400R12KT4HOSA1 module series
FF450R12KE4 with EDA/CAD model made by Infineon. FF450R12KE4 provides MODULE package, which is a part of Module, Trans IGBT Module N-CH 1200V 520A 2400000mW 7-Pin 62MM-1 Tray, IGBT Modules N-CH 1.2KV 520A.
The following are the IGBT module series models:
SKM100GAL128D, SKM145GAL128D, SKM200GAL128D, SKM300GAL128D, SKM400GAL128D, SKM145GAR128D
SKM400GAR128D, SKM300GA12V, SKM400GA12V, SKM600GA12V, SKM150GAL12V, SKM400GAL12V, SKM50GB12T4, SKM75GB12T4, SKM100GB12T4, SKM150GB12T4, SKM200GB12T4