Microchip Technology 1PMT5927CE3/TR13
- 1PMT5927CE3/TR13
- Microchip Technology
- DIODE ZENER 12V 3W DO216AA
- Diodes - Zener - Single
- 1PMT5927CE3/TR13 Лист данных
- DO-216AA
- Tape & Reel (TR)
- Lead free / RoHS Compliant
- 3815
- Запасы спот / разрешенные дилеры / излишки на заводе
- Гарантия качества на 1 год 》
- Нажмите, чтобы узнать цены
Part Number 1PMT5927CE3/TR13 |
Category Diodes - Zener - Single |
Manufacturer Microchip Technology |
Description DIODE ZENER 12V 3W DO216AA |
Package Tape & Reel (TR) |
Series - |
Operating Temperature -55°C ~ 150°C |
Mounting Type Surface Mount |
Package / Case DO-216AA |
Supplier Device Package DO-216AA |
Tolerance ±2% |
Power - Max 3 W |
Voltage - Forward (Vf) (Max) @ If 1.2 V @ 200 mA |
Current - Reverse Leakage @ Vr 1 µA @ 9.1 V |
Voltage - Zener (Nom) (Vz) 12 V |
Impedance (Max) (Zzt) 6.5 Ohms |
Package_case DO-216AA |
1PMT5927CE3/TR13 Гарантии
• Ответьте оперативно
• Гарантированное качество
• Глобальный доступ
• Конкурентоспособная рыночная цена
• Универсальные услуги цепочки поставок
Jinftry, это ваш самый надежный поставщик компонентов, добро пожаловать, чтобы отправить нам запрос, спасибо!
У вас есть вопросы о 1PMT5927CE3/TR13 ?
Не стесняйтесь связаться с нами:
+86-755-82518276
+8615019224070, annies65, +8615118125813
568248857, 827259012, 316249462
+8615019224070, +8615118118839, +8615118125813
( Электронная почта в первую очередь )
Комментарии
Microchip Technology
1PMT5927AE3/TR13
DIODE ZENER 12V 3W DO216AA
1PMT5926E3/TR13
DIODE ZENER 12V 3W DO216AA
1PMT5926CE3/TR13
DIODE ZENER 12V 3W DO216AA
1PMT5926BE3/TR13
DIODE ZENER 12V 3W DO216AA
1PMT5926AE3/TR13
DIODE ZENER 12V 3W DO216AA
1PMT5925E3/TR13
DIODE ZENER 12V 3W DO216AA
1PMT5925CE3/TR13
DIODE ZENER 12V 3W DO216AA
1PMT5925BE3/TR13
DIODE ZENER 12V 3W DO216AA
An introduction to the IGBT module CM1000DU-34NF from Powerex Inc. and its technical applications
An introduction to the IGBT module CM1000DU-34NF from Powerex Inc. and its technical applications
IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the advantages of MOSFET (Metal Oxide Semiconductor Field Effect Transistor) and BJT (Bipolar Transistor). It is widely used in the field of power electronics and used in switching power supplies. , motor drive, inverter and other applications.
IGBT module CM1000DU-34NF The IGBT module is a highly efficient and comp
NPN Silicon Transistor S8050 - Datasheet, Application Specifications, Pinout and Equivalent Replacements
NPN Silicon Transistor S8050 - Datasheet, Application Specifications, Pinout and Equivalent Replacements
S8050 is an NPN bipolar transistor. So when the base pin is connected to ground, the collector and emitter will remain open (reverse biased) and when a signal is supplied to the base pin, the collector and emitter will be closed (forward biased). It is commonly used in amplification and switching applications and is the perfect transistor to perform small and versatile tasks in electronic
1N5408 Power/Rectifier Diode Introduction - Pinout, Price, Datasheet
1N5408 Power/Rectifier Diode Introduction - Pinout, Price, Datasheet
An introduction to the 1N5408 power/rectifier diode is discussed here. 1N5408 is a very common rectifier diode that is widely used in electronic equipment. This is a general purpose silicon diode, the 1N5408 low frequency power diode, used in various rectification and power conversion applications.
The development trend of IGBT (insulated gate bipolar transistor) manufacturers in recent years
PS22A78-E
Description:DIPIPMs are intelligent power modules that integrate power devices, drivers, and protection circuitry. Design time is reduced by the use of application-specific HVICs and value-added features such as linear temperature feed-back. Overall efficiency and reliability are increase ed by the use of full gate CSTBT technology and low thermal impedance. Features:
Low-loss, Full Gate CSTBT IGBTs Single Power Supply
Integrated HVICs
Direct Connection to CPUApplications: