Microsemi Corporation 1PMT5921B/TR13
- 1PMT5921B/TR13
- Microsemi Corporation
- DIODE ZENER 6.8V 3W DO216AA
- Diodes - Zener - Single
- 1PMT5921B/TR13 Лист данных
- DO-216AA
- Tape & Reel (TR)
- Lead free / RoHS Compliant
- 14508
- Запасы спот / разрешенные дилеры / излишки на заводе
- Гарантия качества на 1 год 》
- Нажмите, чтобы узнать цены
Part Number 1PMT5921B/TR13 |
Category Diodes - Zener - Single |
Manufacturer Microsemi Corporation |
Description DIODE ZENER 6.8V 3W DO216AA |
Package Tape & Reel (TR) |
Series - |
Operating Temperature -55°C ~ 150°C |
Mounting Type Surface Mount |
Package / Case DO-216AA |
Supplier Device Package DO-216AA |
Tolerance ±5% |
Power - Max 3 W |
Voltage - Forward (Vf) (Max) @ If 1.2 V @ 200 mA |
Current - Reverse Leakage @ Vr 5 µA @ 5.2 V |
Voltage - Zener (Nom) (Vz) 6.8 V |
Impedance (Max) (Zzt) 2.5 Ohms |
Package_case DO-216AA |
1PMT5921B/TR13 Гарантии
• Ответьте оперативно
• Гарантированное качество
• Глобальный доступ
• Конкурентоспособная рыночная цена
• Универсальные услуги цепочки поставок
Jinftry, это ваш самый надежный поставщик компонентов, добро пожаловать, чтобы отправить нам запрос, спасибо!
У вас есть вопросы о 1PMT5921B/TR13 ?
Не стесняйтесь связаться с нами:
+86-755-82518276
+8615019224070, annies65, +8615118125813
568248857, 827259012, 316249462
+8615019224070, +8615118118839, +8615118125813
( Электронная почта в первую очередь )
Комментарии
Microsemi Corporation
1PMT5921A/TR13
DIODE ZENER 6.8V 3W DO216AA
1PMT5921/TR13
DIODE ZENER 6.8V 3W DO216AA
1PMT5920E3/TR13
DIODE ZENER 6.8V 3W DO216AA
1PMT5920CE3/TR13
DIODE ZENER 6.8V 3W DO216AA
1PMT5920C/TR13
DIODE ZENER 6.8V 3W DO216AA
2EZ140D10/TR12
DIODE ZENER 6.8V 3W DO216AA
2EZ140D/TR12
DIODE ZENER 6.8V 3W DO216AA
2EZ130DE3/TR12
DIODE ZENER 6.8V 3W DO216AA
What is a bipolar transistor and what is its operating mode
NPN Silicon Transistor S8050 - Datasheet, Application Specifications, Pinout and Equivalent Replacements
NPN Silicon Transistor S8050 - Datasheet, Application Specifications, Pinout and Equivalent Replacements
S8050 is an NPN bipolar transistor. So when the base pin is connected to ground, the collector and emitter will remain open (reverse biased) and when a signal is supplied to the base pin, the collector and emitter will be closed (forward biased). It is commonly used in amplification and switching applications and is the perfect transistor to perform small and versatile tasks in electronic
Classification of IGBT modules, difference between application characteristics and MOSFETs
Classification of IGBT modules, difference between application characteristics and MOSFETs
Both MOSFETs (Metal Oxide Semiconductor Field Effect Transistors) and IGBTs (Insulated Gate Bipolar Transistors) are commonly used switching devices in power electronics. They each have their own characteristics and application scenarios, the following are their main differences:
1N5408 Power/Rectifier Diode Introduction - Pinout, Price, Datasheet
1N5408 Power/Rectifier Diode Introduction - Pinout, Price, Datasheet
An introduction to the 1N5408 power/rectifier diode is discussed here. 1N5408 is a very common rectifier diode that is widely used in electronic equipment. This is a general purpose silicon diode, the 1N5408 low frequency power diode, used in various rectification and power conversion applications.